Microchip and film forming method for metal thin film of microchip
US-2016109356-A1 · Apr 21, 2016 · US
US10613393B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10613393-B2 |
| Application number | US-201615758326-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 24, 2016 |
| Priority date | Oct 27, 2015 |
| Publication date | Apr 7, 2020 |
| Grant date | Apr 7, 2020 |
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The present specification relates to a conductive structure body, and an electrode and a display device including the same.
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The invention claimed is: 1. A conductive structure body, comprising: a substrate; a first metal layer provided on the substrate, and formed of a single metal, of which an average light reflectance of light having a wavelength of 380 nm to 780 nm in a thickness of the first metal layer having 0% of light transmissivity is 60% to 100%; a second metal layer provided on at least one surface of the first metal layer, formed of a translucent layer of MoTi present in a thickness having 1% to 60% light transmissivity in a visible ray region; and a light reflection reducing layer comprising an oxynitride of MoTi provided on the second metal layer and formed of a translucent material, and an average light reflectance in the surface of the light reflection reducing layer in light having a wavelength of 380 nm to 780 nm is decreased by 7% to 50% compared to a case where the second metal layer is not provided, and wherein an extinction coefficient (k) of the second metal layer in light having a wavelength of 380 nm to 780 nm is 2.9 or more and 3.8 or less. 2. The conductive structure body of claim 1 , wherein the second metal layer is formed of two or more kinds of metal, of which average light reflectance in light having a wavelength of 380 nm to 780 nm in a thickness of the second metal layer having 0% of light transmissivity is 40% to 60%. 3. The conductive structure body of claim 1 , wherein a thickness of the first metal layer is 10 nm or more and 1 μm or less. 4. The conductive structure body of claim 1 , wherein a thickness of the second metal layer is 3 nm or more and 35 nm or less. 5. The conductive structure body of claim 1 , wherein a thickness of the light reflection reducing layer is 10 nm or more and 100 nm or less. 6. The conductive structure body of claim 1 , wherein an average light reflectance in a surface of the light reflection reducing layer in light having a wavelength of 380 nm to 780 nm is 25% or less. 7. The conductive structure body of claim 1 , wherein an extinction coefficient (k) of the light reflection reducing layer in light having a wavelength of 380 nm to 780 nm is 0.2 or more and 1 or less. 8. The conductive structure body of claim 1 , further comprising: conductive lines provided on the substrate, wherein the conductive line includes the first metal layer, the second metal layer, and the light reflection reducing layer. 9. The conductive structure body of claim 8 , wherein the conductive line includes a conductive pattern including a plurality of openings and the conductive lines dividing the plurality of openings. 10. The conductive structure body of claim 9 , wherein a line width of the conductive line is 0.1 μm or more and 100 μm or less. 11. The conductive structure body of claim 9 , wherein a line interval between the adjacent conductive lines is 0.1 μm or more and 100 μm or less. 12. An electrode comprising the conductive structure body of claim 1 . 13. The electrode of claim 12 , wherein the electrode is an electrode for a touch panel, an electrode for a liquid crystal display, or an electrode for an OLED display. 14. A display device comprising the electrode of claim 12 .
Digitisers structurally integrated in a display · CPC title
transmissive · CPC title
for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS] · CPC title
Anti-reflection arrangements · CPC title
Wiring, e.g. gate line, drain line · CPC title
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