Ultralight robust plate materials

Patent metadata

Field	Value
Publication number	US-10612138-B2
Application number	US-201715456718-A
Country	US
Kind code	B2
Filing date	Mar 13, 2017
Priority date	Sep 15, 2014
Publication date	Apr 7, 2020
Grant date	Apr 7, 2020

Abstract

A nanoscale plate structure includes base plates and rib plates with nanoscale thickness and macroscopic lateral dimensions. The base plate resides in the first plane, the ribs can reside out-of-plane and form at least one strengthening rib, and additional base plates can reside in planes parallel to the first plane. The strengthening rib can be patterned such that there is no straight line path extending through a lateral dimension of the plate structure that does not intersect the at least one base plate and the at least one strengthening rib. The plates and ribs used in the structure have a thickness between about 1 nm and about 100 nm. The plate structures can be fabricated using a conformal deposition method including atomic layer deposition.

First claim

The invention claimed is:

1. A plate structure comprising:
a corrugated single-layer plane including
a planar base portion; and
an out-of-plane rib portion forming at least one strengthening rib, wherein the at least one strengthening rib is formed such that there is no straight line path extending through the height or width of the plate structure that does not intersect the planar base portion and the at least one strengthening rib, wherein the plate structure is configured to revert to its original shape by local buckling of the at least one strengthening rib after being bent, and

wherein the plate structure has a thickness between about 1 nm and about 1000 nm.

2. The plate structure of claim 1 wherein the plate structure comprises a metal or ceramic.

3. The plate structure of claim 2 wherein the plate structure comprises at least one of alumina and hafnia.

4. The plate structure of claim 1 wherein the plate structure has a thickness of between about 20 nm and about 75 nm.

5. The plate structure of claim 1 wherein the plate structure has a lateral dimension of at least about 1 cm.

6. The plate structure of claim 1 , wherein the at least one strengthening rib forms a honeycomb pattern.

7. The plate structure of claim 1 , wherein the planar base portion and out-of-plane rib portion are formed by atomic layer deposition.

8. A plate structure comprising a plurality of cells, each cell comprising a planar base portion and at least one out-of-plane rib portion, the at least one out-of-plane rib portion connected to out-of-plane rib portions of adjacent cells to form at least one strengthening rib,
wherein the at least one strengthening rib is formed such that there is no straight line path extending through the height or width of the plate structure that does not intersect the planar base portion of at least one cell and the at least one strengthening rib, and
wherein the plate structure is a corrugated structure and has a thickness between about 1 nm and about 500 nm, wherein the plate structure is configured to revert to its original shape by local buckling of the at least one strengthening rib after being bent.

9. The plate structure of claim 8 , wherein each of the plurality of cells has the same shape.

10. The plate structure of claim 8 , wherein each of the plurality of cells comprises a honeycomb cell.

11. The plate structure of claim 8 , wherein the plurality of cells comprises a first plurality of cells having a first shape and a second plurality of cells having a second shape.

12. The plate structure of claim 8 , wherein each cell comprises at least one of alumina and hafnia.

13. The plate structure of claim 8 , wherein each of the plurality of cells is formed by atomic layer deposition.

Assignees

• Univ Pennsylvania

Inventors

• Bargatin Igor
• Davami Keivan

Classifications

• H10P50/242

  of Group IV materials · CPC title

• H01J2237/334

  Etching · CPC title

• H01J37/321

  the radio frequency energy being inductively coupled to the plasma · CPC title

• C23C16/45555

  applied in non-semiconductor technology · CPC title

• C23C16/45525 Primary

  Atomic layer deposition [ALD] · CPC title