MOS field-effect transistor and method for the production thereof

Patent metadata

Field	Value
Publication number	US-10608105-B2
Application number	US-201414891907-A
Country	US
Kind code	B2
Filing date	Mar 11, 2014
Priority date	May 17, 2013
Publication date	Mar 31, 2020
Grant date	Mar 31, 2020

Abstract

A substrate for a metal oxide semiconductor field effect transistor, and a metal oxide semiconductor field effect transistor, are made available. The substrate encompasses: an n-doped epitaxial drift zone, a p−-doped epitaxial first layer disposed on the drift zone, a heavily n-doped second layer disposed on the first layer, and a terminal formed by p+ implantation, the first layer being in electrical contact with the terminal and being disposed laterally between the terminal and a trench, the trench being formed in the drift zone, in the first layer, and in the second layer. The substrate is characterized in that an implantation depth (P) of the p+ implantation is at least as great as a depth of the trench. The deep p+ implantation can separate adjacent trenches in such a way that a field can no longer attack a gate oxide because it is directed around the gate oxide.

First claim

What is claimed is:

1. A substrate for a metal oxide semiconductor field effect transistor, comprising:
an n-doped epitaxial drift zone;
a p − -doped epitaxial first layer disposed on the drift zone;
a heavily n-doped second layer disposed on the first layer; and
a terminal formed by p + implantation, wherein:
the first layer is in electrical contact with the terminal and is disposed laterally between the terminal and a trench,
the trench is formed in the first layer, in the second layer, and in the drift zone,
an implantation depth of the p + implantation is at least as great as a depth of the trench,
the terminal is formed in the first layer and in the drift zone,
the terminal is formed in a region of the first layer in which the first layer is not covered by the second layer,
the first layer is partly removed in the region, so that a trough is produced,
the entire terminal formed by the p + implantation is situated in a region laterally separated from the trench by the first layer,
the drift zone is defined by a top surface of the n-doped epitaxial drift zone and a bottom surface of the n-doped epitaxial drift zone,
the first layer is defined by a top surface of the p − - doped epitaxial first layer and a bottom surface of the p − - doped epitaxial first layer,
the top surface of the drift zone directly and physically contacts the bottom surface of the p − - doped epitaxial layer, and
a region extending in a vertical direction beneath the trench includes only the n-doped epitaxial drift zone.

2. The substrate as recited in claim 1 , further comprising a gate electrode disposed in the trench in such a way that a vertical channel region is formed in the first layer.

3. The substrate as recited in claim 2 , wherein the gate electrode is formed on an oxide layer that covers at least a bottom of the trench.

4. The substrate as recited in claim 1 , the implantation depth is several hundred nanometers deeper than a depth of the trench.

5. The substrate for a metal oxide semiconductor field effect transistor of claim 1 , wherein:
the second layer is defined by a top surface of the heavily n-doped second layer and a bottom surface of the heavily n-doped second layer, and
the top surface of the p − -doped epitaxial layer contacts the bottom surface of the heavily n-doped second layer.

6. The substrate for a metal oxide semiconductor field effect transistor of claim 1 , wherein:
the p + implantation is situated in a region laterally separated from the trench by the first layer.

7. A metal oxide semiconductor field effect transistor, comprising:
an n-doped epitaxial drift zone;
a p − -doped epitaxial first layer disposed on the drift zone;
a heavily n-doped second layer disposed on the first layer;
a terminal, formed by p + implantation, with which the first layer is in electrical contact; and
a trench, in which an oxide layer and thereupon a gate electrode are disposed so that the first layer is disposed laterally between the trench and the terminal, the trench being formed in the first layer, in the second layer, and in the drift zone, so that a vertical channel region can be formed in the first layer, wherein:
an implantation depth of the p + implantation is at least as great as a depth of the trench,
the terminal is formed in the first layer and in the drift zone,
the terminal is formed in a region of the first layer in which the first layer is not covered by the second layer,
the first layer is partly removed in the region, so that a trough is produced,
the entire terminal formed by the p + implantation is situated in a region laterally separated from the trench by the first layer,
the drift zone is defined by a top surface of the n-doped epitaxial drift zone and a bottom surface of the n-doped epitaxial drift zone,
the first layer is defined by a top surface of the p − - doped epitaxial first layer and a bottom surface of the p − - doped epitaxial first layer,
the top surface of the drift zone directly and physically contacts the bottom surface of the p − -doped epitaxial layer, and
a region extending in a vertical direction beneath the trench includes only the n-doped epitaxial drift zone.

8. The metal oxide semiconductor field effect transistor of claim 7 , wherein the implantation depth is several hundred nanometers deeper than a depth of the trench.

9. A method for manufacturing a metal oxide semiconductor field effect transistor, comprising:
providing a n-doped epitaxial drift zone;
disposing a p − -doped epitaxial first layer on the drift zone and a heavily n-doped second layer on the first layer;
forming a terminal in the first layer and in the drift zone by p + implantation in a region of the first layer in which the first layer is not covered by the second layer, so that the first layer is in electrical contact with the terminal;
forming a trench in the first layer, in the second layer, and in the drift zone; and
forming a gate oxide in the trench and disposing a gate electrode in the trench, so that the first layer is disposed laterally between the trench and the terminal, so that a vertical channel region can be formed in the first layer, wherein:
an implantation depth of the p + implantation is at least as great as a depth of the trench,
the first layer is partly removed in the region, so that a trough is produced,
the entire terminal formed by the p + implantation is situated in a region laterally separated from the trench by the first layer,
the drift zone is defined by a top surface of the n-doped epitaxial drift zone and a bottom surface of the n-doped epitaxial drift zone,
the first layer is defined by a top surface of the p − - doped epitaxial first layer and a bottom surface of the p − - doped epitaxial first layer,
the top surface of the drift zone directly and physically contacts the bottom surface of the p − -doped epitaxial layer, and
a region extending in a vertical direction beneath the trench includes only the n-doped epitaxial drift zone.

10. The method for manufacturing a metal oxide semiconductor field effect transistor of claim 9 , wherein the implantation depth is several hundred nanometers deeper than a depth of the trench.

11. A motor vehicle, comprising:
a power switch that includes a metal oxide semiconductor field effect transistor, the transistor including:
an n-doped epitaxial drift zone;
a p − -doped epitaxial first layer disposed on the drift zone;
a heavily n-doped second layer disposed on the first layer;
a terminal, formed by p + implantation, with which the first layer is in electrical contact; and
a trench, in which an oxide layer and thereupon a gate electrode are disposed so that the first layer is disposed laterally between the trench and the terminal, the trench being formed in the first layer, in the second layer, and in the drift zone, so that a vertical channel region can be formed in the first layer, wherein:
an implantation depth of the p + implantation is at least as great as a depth of the trench,
the terminal is formed in the first layer and in the drift zone,
the entire terminal formed by the p + implantation is formed in a region of the first layer in which the first layer is not covered by the second layer,
the first layer is partly removed in the region, so that a trough is produced,
the terminal is situated in a region laterally separated from the trench by the first layer,
the drift zone is defined by a top surface of the n-doped epitaxial drift zone and a bottom surface of the n-doped epitaxial drift zone,
the first layer is defined by a top surface of the p − - doped epitaxial first layer and a bottom surface of the p − - doped epitaxial fi

Assignees

• Bosch Gmbh Robert

Inventors

• Grieb Michael
• Trautmann Achim
• Qu Ning

Classifications

• H10P30/2042

  into crystalline silicon carbide · CPC title

• H10P30/204

  into Group IV semiconductors · CPC title

• H10P30/21

  of electrically active species · CPC title

• H10D64/01366

  the semiconductor being silicon carbide · CPC title

• H01L21/049

  Electricity · mapped topic