Solid-state image pickup apparatus and image pickup system

Patent metadata

Field	Value
Publication number	US-10608034-B2
Application number	US-201715851354-A
Country	US
Kind code	B2
Filing date	Dec 21, 2017
Priority date	Dec 26, 2009
Publication date	Mar 31, 2020
Grant date	Mar 31, 2020

Abstract

An apparatus according to the present invention in which a first substrate including a photoelectric conversion element and a gate electrode of a transistor, and a second substrate including a peripheral circuit portion are placed upon each other. The first substrate does not include a high-melting-metal compound layer, and the second substrate includes a high-melting-metal compound layer.

First claim

What is claimed is:

1. A photoelectric conversion apparatus comprising:
a first semiconductor substrate including a photoelectric conversion element;
a second semiconductor substrate including a source region and a drain region of a transistor;
an insulating layer disposed between the first semiconductor substrate and the second semiconductor substrate;
a silicide provided on at least one of a gate electrode of the transistor, the drain region and the source region; and
a first contact plug disposed between the first semiconductor substrate and the second semiconductor substrate,
wherein
the silicide includes a first portion and a second portion,
the first portion of the silicide is disposed between the first contact plug and the at least one of the gate electrode, the drain region and the source region of the transistor, and
the second portion of the silicide is disposed between a part of the insulating layer and the at least one of the gate electrode, the drain region and the source region of the transistor.

2. The photoelectric conversion apparatus according to claim 1 , wherein
the first portion and the second portion of the silicide are arranged along a surface of the second semiconductor substrate, and
the first contact plug and the part of the insulating layer are arranged along the surface of the second semiconductor substrate.

3. The photoelectric conversion apparatus according to claim 1 , further comprising:
a semiconductor region included in the first semiconductor substrate; and
a transfer gate electrode disposed between the first semiconductor substrate and the second semiconductor substrate and configured to transfer a charge generated in the photoelectric conversion element to the semiconductor region.

4. The photoelectric conversion apparatus according to claim 3 , further comprising:
a second contact plug connected to the semiconductor region; and
a connection portion including at least two wiring layers, and being disposed between the first semiconductor substrate and the second semiconductor substrate,
wherein the semiconductor region is electrically connected to the transistor via the first contact plug, the connection portion and the second contact plug.

5. The photoelectric conversion apparatus according to claim 4 , further comprising:
a microlens,
wherein the first semiconductor substrate has a first side and a second side, the first side is opposite to the second side, and the second side faces the second semiconductor substrate, and
wherein the microlens is disposed on the first side of the first semiconductor substrate.

6. The photoelectric conversion apparatus according to claim 5 , further comprising:
a light shielding film provided on the first side of the first semiconductor substrate,
wherein the light shielding film is patterned.

7. The photoelectric conversion apparatus according to claim 3 , further comprising:
a second contact plug connected to the semiconductor region;
a first wiring layer disposed between the first semiconductor substrate and the second semiconductor substrate; and
a connection portion including at least two wiring layers, and being disposed between the first semiconductor substrate and the second semiconductor substrate,
wherein the semiconductor region is electrically connected to the connection portion at least via the second contact plug and the first wiring layer.

8. The photoelectric conversion apparatus according to claim 3 , further comprising:
an amplification transistor electrically connected to the semiconductor region and provided in the first semiconductor substrate.

9. The photoelectric conversion apparatus according to claim 8 , wherein the amplification transistor is a portion of a source follower circuit.

10. The photoelectric conversion apparatus according to claim 8 , further comprising:
a microlens,
wherein the first semiconductor substrate has a first side and a second side, the first side is opposite to the second side, and the second side faces the second semiconductor substrate, and
wherein the microlens is disposed on the first side of the first semiconductor substrate.

11. The photoelectric conversion apparatus according to claim 10 , further comprising:
a light shielding film provided on the first side of the first semiconductor substrate,
wherein the light shielding film is patterned.

12. The photoelectric conversion apparatus according to claim 8 ,
wherein
the amplification transistor includes a drain region and a source region, and
a part of the drain region of the amplification transistor is in contact with the insulating layer.

13. The photoelectric conversion apparatus according to claim 12 , wherein a silicide is not formed on the drain region of the amplification transistor.

14. The photoelectric conversion apparatus according to claim 12 , wherein no metal is in contact with a surface of the first semiconductor substrate except for regions where contact plugs are provided.

15. The photoelectric conversion apparatus according to claim 12 , further comprising:
a third substrate,
wherein the second semiconductor substrate is arranged between the first semiconductor substrate and the third substrate.

16. The photoelectric conversion apparatus according to claim 8 , further comprising:
a third substrate,
wherein the second semiconductor substrate is arranged between the first semiconductor substrate and the third substrate.

17. The photoelectric conversion apparatus according to claim 8 , further comprising:
an AD conversion circuit provided in the second semiconductor substrate and including the transistor,
wherein the AD conversion circuit is configured to process a signal output by the amplification transistor.

18. The photoelectric conversion apparatus according to claim 17 ,
wherein the amplification transistor includes a drain region and a source region, and
a part of the drain region of the amplification transistor is in contact with the insulating layer.

19. The photoelectric conversion apparatus according to claim 8 , further comprising:
a first element isolation region provided in the first semiconductor substrate; and
a second element isolation region provided in the second semiconductor substrate.

20. The photoelectric conversion apparatus according to claim 19 ,
wherein
the first element isolation region has a first length in a direction toward which the first semiconductor substrate and the second semiconductor substrate are arranged,
the second element isolation region has a second length in the direction, and
the first length is larger than the second length.

21. The photoelectric conversion apparatus according to claim 20 , wherein the first element isolation region includes a P-type semiconductor region and an insulator.

22. The photoelectric conversion apparatus according to claim 20 ,
wherein
the first element isolation region extends from one side of the first semiconductor substrate to another side of the first semiconductor substrate, and
the first element isolation region reaches both side of the first semiconductor substrate.

23. The photoelectric conversion apparatus according to claim 22 , wherein a silicide is not formed on the first element isolation region.

24. The photoelectric conversion apparatus according to claim 23 ,
wherein
the amplification transistor includes a drain region and a source region, and
a part of the dr

Assignees

• Canon Kk

Inventors

• Endo Nobuyuki
• Itano Tetsuya
• Yamazaki Kazuo
• Watanabe Kyouhei
• Ichikawa Takeshi

Classifications

• H01L27/14636

  Electricity · mapped topic

• H01L27/14632

  Electricity · mapped topic

• H01L2224/80896

  Electricity · mapped topic

• H04N5/374

  Electricity · mapped topic

• H01L31/02

  Electricity · mapped topic