Provision of structural integrity in memory device

Patent metadata

Field	Value
Publication number	US-10607695-B2
Application number	US-201615770491-A
Country	US
Kind code	B2
Filing date	Sep 6, 2016
Priority date	Nov 24, 2015
Publication date	Mar 31, 2020
Grant date	Mar 31, 2020

Abstract

Embodiments of the present disclosure are directed towards techniques to provide structural integrity for a memory device comprising a memory array. In one embodiment, the device may comprise a memory array having at least a plurality of wordlines disposed in a memory region of a die, and a first fill layer deposited between adjacent wordlines of the plurality of wordlines in the memory region, to provide structural integrity for the memory array. At least a portion of a periphery region of the die adjacent to the memory region may be substantially filled with a second fill layer that is different than the first fill layer. Other embodiments may be described and/or claimed.

First claim

What is claimed is:

1. An apparatus, comprising:
a memory region that includes a plurality of wordlines disposed adjacent each other, the wordlines having first sides and second sides opposite the first sides, wherein the first sides of the wordlines define a plane in a die, wherein the plurality of wordlines form a memory array;
a periphery region disposed adjacent to the memory region, wherein the periphery region includes a first side and a second side opposite the first side, wherein the first side of the periphery region further defines the plane of the die;
a first fill layer deposited substantially between adjacent wordlines of the plurality of wordlines, to provide structural integrity for the memory array; and
a second fill layer deposited in the periphery region to substantially fill at least a portion of the periphery region, wherein the second fill layer covers the first side of the at least a portion of the periphery region, wherein the second fill layer comprises inorganic dielectric material.

2. The apparatus of claim 1 , wherein the first fill layer comprises organic spin-on dielectric material (CSOD).

3. The apparatus of claim 1 , wherein the at least a portion of the periphery region comprises a first portion, wherein the periphery region includes a second portion located outside the memory array and between the memory region and the first portion, wherein the second portion is substantially filled with the first fill layer.

4. The apparatus of claim 1 , wherein the periphery region is separated from the memory region by an array protection layer, which extends into the first side of the periphery region.

5. The apparatus of claim 1 , wherein the periphery region includes one or more vias disposed in the second fill layer to provide electrical connectivity for the memory array with circuitry associated with the memory array.

6. The apparatus of claim 1 , wherein the apparatus further comprises:
a sealing layer disposed on the memory and periphery regions; and
a capping layer disposed on top of the wordlines of the memory region and on the periphery region.

7. The apparatus of claim 1 , further comprising a plurality of bitlines disposed in the die with the first fill layer to fill gaps between adjacent bitlines, to further provide structural integrity for the memory array.

8. The apparatus of claim 1 , wherein the memory array comprises a three-dimensional (3D) memory array.

9. The apparatus of claim 1 , wherein the apparatus comprises an integrated circuit.

Assignees

• Intel Corp

Inventors

• Bernhardt Michael J

Classifications

• G11C2213/71

  Three dimensional array · CPC title

• G11C13/0021

  Auxiliary circuits · CPC title

• G11C2213/81

  Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires · CPC title

• G11C13/003

  Cell access · CPC title

• G11C13/0007 Primary

  comprising metal oxide memory material, e.g. perovskites · CPC title