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Porous oxide semiconductor including three-dimensionally interconnected nanopores, mesopores, and macropores, method for preparing the porous oxide semiconductor and gas sensor including the porous oxide semiconductor as gas sensing material
US10604418B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10604418-B2 |
| Application number | US-201615747698-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 30, 2016 |
| Priority date | Jul 28, 2015 |
| Publication date | Mar 31, 2020 |
| Grant date | Mar 31, 2020 |
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Abstract
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The present invention relates to a porous oxide semiconductor including three-dimensionally interconnected nanopores, mesopores, and macropores, a method for preparing the porous oxide semiconductor, and a gas sensor including the porous oxide semiconductor as a gas sensing material. The nanopores have a diameter of 1 nm to less than 4 nm, the mesopores have a diameter of 4 nm to 50 nm, and the macropores have a diameter of 100 nm to less than 1 μm. The oxide semiconductor gas sensor of the present invention exhibits ultrahigh response and ultrafast response to various analyte gases due to the presence of the controlled nanopores, mesopores, and macropores.
First claim
Opening claim text (preview).
The invention claimed is: 1. A porous oxide semiconductor for gas sensing comprising three-dimensionally interconnected nanopores, mesopores, and macropores wherein the nanopores have a diameter of 1 nm to less than 4 nm, the mesopores have a diameter of 4 nm to 50 nm, and the macropores have a diameter of 100 nm to less than 1 μm, wherein the mesopores are tubular and the macropores are spherical, and wherein the nanopores and the macropores are three-dimensionally interconnected by the mesopores, and wherein the oxide semiconductor is selected from the group consisting of SnO2, WO3, In2O3, ZnO, TiO2, Fe2O3, MoO3, CuO, NiO, Co3O4, and Cr2O3. 2. A gas sensor comprising the porous oxide semiconductor according to claim 1 as a material for a gas sensing layer. 3. The porous oxide semiconductor according to claim 1 , wherein the nanopores are spherical.
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Classifications
Pore diameter · CPC title
obtained by TEM, STEM, STM or AFM · CPC title
Oxides · CPC title
comprising organic polymers · CPC title
Submicrometer sized, i.e. from 0.1-1 micrometer · CPC title
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- What does patent US10604418B2 cover?
- The present invention relates to a porous oxide semiconductor including three-dimensionally interconnected nanopores, mesopores, and macropores, a method for preparing the porous oxide semiconductor, and a gas sensor including the porous oxide semiconductor as a gas sensing material. The nanopores have a diameter of 1 nm to less than 4 nm, the mesopores have a diameter of 4 nm to 50 nm, and the…
- Who is the assignee on this patent?
- Univ Korea Res & Bus Found
- What technology area does this patent fall under?
- Primary CPC classification C01G41/02. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Mar 31 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).