Semiconductor device, semiconductor device manufacturing method, and power conversion apparatus

Patent metadata

Field	Value
Publication number	US-10600779-B2
Application number	US-201715836949-A
Country	US
Kind code	B2
Filing date	Dec 11, 2017
Priority date	Apr 6, 2017
Publication date	Mar 24, 2020
Grant date	Mar 24, 2020

Abstract

An RC-IGBT includes a first electrode disposed on a first main surface of a semiconductor substrate over a transistor region and a diode region. The semiconductor substrate includes a MOS gate structure on a first main surface side in the transistor region. The RC-IGBT includes: an interlayer dielectric covering a gate electrode of the MOS gate structure, and having a contact hole exposing a semiconductor layer; and a barrier metal disposed in the contact hole. The first electrode enters the contact hole, is in contact with the semiconductor layer of the MOS gate structure through the barrier metal, and is in direct contact with a semiconductor layer in the diode region of the semiconductor substrate.

First claim

What is claimed is:

1. A semiconductor device comprising:
a semiconductor substrate having a first main surface and a second main surface, and including a transistor region forming a transistor extending from said first main surface to said second main surface and a diode region forming a diode extending from said first main surface to said second main surface; and
a first electrode disposed on said first main surface of said semiconductor substrate over said transistor region and said diode region, wherein
said semiconductor substrate includes a MOS gate structure on a first main surface side in said transistor region,
said semiconductor device includes:
an interlayer dielectric covering a gate electrode of said MOS gate structure, and having a contact hole exposing a semiconductor layer of said MOS gate structure; and
a barrier metal disposed in said contact hole,

said first electrode enters said contact hole, is in contact with the semiconductor layer of said MOS gate structure through said barrier metal in said contact hole, and is in direct contact with a semiconductor layer in said diode region of said semiconductor substrate,
said barrier metal includes titanium nitride, titanium carbide, or titanium silicide, and
no barrier metal is disposed on said first main surface of said semiconductor substrate in said diode region.

2. The semiconductor device according to claim 1 , wherein
said semiconductor substrate includes a collector layer of a second conductivity type on a second main surface side in said transistor region, and
said transistor region forms an IGBT.

3. The semiconductor device according to claim 1 , wherein
said first electrode is an aluminum alloy.

4. The semiconductor device according to claim 1 , wherein
said barrier metal includes silicide at a contact interface with the semiconductor layer of said MOS gate structure.

5. The semiconductor device according to claim 1 , wherein
said contact hole includes a first width at a lower surface of said interlayer dielectric and a second width at an upper surface of said interlayer dielectric, said second width being larger than said first width, and
a width of said contact hole changes at a constant rate from said first width to said second width.

Assignees

• Mitsubishi Electric Corp

Inventors

• Kamibaba Ryu
• Tarutani Masayoshi
• Soneda Shinya

Classifications

• Y02E10/56

  Power conversion systems, e.g. maximum power point trackers · CPC title

• H02P27/06

  using DC to AC converters or inverters (H02P27/05 takes precedence) · CPC title

• H02M7/5387

  in a bridge configuration · CPC title

• H01L21/76843

  Electricity · mapped topic

• H01L21/76889

  Electricity · mapped topic