System and method for substrate processing chambers

Patent metadata

Field	Value
Publication number	US-10600624-B2
Application number	US-201816230766-A
Country	US
Kind code	B2
Filing date	Dec 21, 2018
Priority date	Mar 10, 2017
Publication date	Mar 24, 2020
Grant date	Mar 24, 2020

Abstract

Systems and methods for depositing a film in a PECVD chamber while reducing residue buildup in the chamber. In some embodiments disclosed herein, a processing chamber includes a chamber body, a substrate support, a showerhead, and one or more heaters configured to heat the showerhead. In some embodiments, the processing chamber includes a controller.

First claim

The invention claimed is:

1. A processing chamber system, comprising:
a chamber body having a chamber base, one or more sidewalls, and a chamber lid defining a processing volume,
wherein the chamber lid comprises a showerhead;
a substrate support disposed in the processing volume, the substrate support having a first surface, a second surface opposite the first surface, and a third surface connecting the first surface and the second surface around a circumference of the substrate support;
wherein the processing volume comprises:
a first volume defined by the first surface of the substrate support and a surface of the showerhead that faces the processing volume, and
a second volume defined by the second surface of the substrate support and a surface of the chamber base that faces the processing volume;

a purge gas inlet that is configured to introduce a purge gas into the second volume through one or more openings;
a precursor inlet that is configured to introduce a precursor gas into the first volume through the showerhead;
a combined gas exhaust volume that is configured to evacuate the purge gas and the precursor gas, wherein the precursor gas is evacuated from the first volume to the combined gas exhaust volume through a first gas inlet and the purge gas is evacuated from the second volume to the combined gas exhaust volume through a second gas inlet; and
one or more heaters disposed in the showerhead that are configured to heat the showerhead.

2. The processing chamber system of claim 1 , further comprising a controller being configured to, when executed by a processor:
cause the one or more heaters disposed in the showerhead to heat the showerhead;
introduce the precursor gas into the first volume;
introduce the purge gas into the second volume; and
evacuate the precursor gas from the first volume while simultaneously evacuating the purge gas from the second volume.

3. The processing chamber system of claim 2 , wherein the controller is configured to, when executed by the processor, cause the one or more heaters disposed in the showerhead to heat the showerhead to a temperature within a range of about 270 degrees Celsius to about 350 degrees Celsius.

4. The processing chamber system of claim 1 , further comprising a ring disposed on a faceplate of the showerhead, wherein the ring is disposed radially outside of one or more openings in the faceplate of the showerhead.

5. The processing chamber system of claim 4 , wherein the ring comprises an angled inner surface.

6. The processing chamber system of claim 1 , wherein the combined gas exhaust volume is disposed between a plane of the first surface and the chamber base.

7. A processing chamber system, comprising:
a chamber body having a chamber base, one or more sidewalls, and a chamber lid defining a processing volume,
wherein the chamber lid comprises a showerhead;
a substrate support disposed in the processing volume, the substrate support having a first surface, a second surface opposite the first surface, and a third surface connecting the first surface and the second surface around a circumference of the substrate support;
a first liner disposed in a circumferential channel in the chamber body,
wherein the first liner is located between a plane of the second surface and the chamber base;
a second liner disposed radially inwardly of the first liner,
wherein the first liner and the second liner define an exhaust channel;
a third liner disposed radially inwardly of the one or more sidewalls between the first liner and the chamber lid,
wherein the second liner, the third liner, and the third surface of the substrate support define a combined gas exhaust volume when the substrate support is in a raised position,
wherein a first inlet to the combined gas exhaust volume is disposed between the substrate support and the third liner and a second inlet to the combined gas exhaust volume is disposed between the substrate support and the second liner when the substrate support is in the raised position, and
wherein an opening into the combined gas exhaust volume from the first inlet is below the plane of the first surface and an opening into the combined gas exhaust volume form the second inlet is above the plane of the second surface when the substrate support is in the raised position; and
one or more heaters disposed in the showerhead that are configured to heat the showerhead.

8. The processing chamber system of claim 7 , wherein a width of the first inlet is between about 0.5 mm and about 10 mm.

9. The processing chamber system of claim 8 , wherein a width of the second inlet is between about 1 mm and about 3 mm.

10. The processing chamber system of claim 7 , further comprising a controller being configured to, when executed by a processor:
cause the one or more heaters disposed in the showerhead to heat the showerhead.

11. A processing chamber system, comprising:
a chamber body having an interior volume, wherein the chamber body has an interior chamber surface;
a substrate support disposed in the interior volume;
a showerhead having one or more heaters that are configured to heat the showerhead;
a process kit disposed in the interior volume, the process kit comprising:
a top edge member disposed outwardly from the substrate support,
a pumping liner disposed outwardly from the substrate support in the chamber body, wherein the pumping liner surrounds a purge volume, and
an outer flow path disposed between the pumping liner and the interior chamber surface;

a purge gas opening in the chamber body in fluid communication with the purge volume;
an exhaust outlet in the chamber body, wherein the exhaust outlet is in fluid communication with the outer flow path; and
a cover substrate disposed above the substrate support, wherein a purge gap is disposed between the top edge member and the cover substrate.

12. The processing chamber system of claim 11 , further comprising a ring disposed on a faceplate of the showerhead, wherein the ring is disposed radially outside of one or more openings in the faceplate of the showerhead.

13. The processing chamber system of claim 12 , wherein the ring comprises an angled inner surface.

14. The processing chamber system of claim 11 , wherein the top edge member has a side surface, wherein the cover substrate has a cover substrate outer surface, and wherein the side surface is laterally spaced from the cover substrate outer surface by a lateral distance to define a purge gap, and wherein the lateral distance is within a range of about 1 mm to about 3 mm.

15. The processing chamber system of claim 11 , wherein the pumping liner separates the purge volume from the outer flow path.

16. The processing chamber system of claim 11 , wherein the substrate support has a top support surface, wherein the top edge member extends over and is vertically spaced from the top support surface by a vertical distance that is within a range of about 1 mm to about 8 mm.

17. The processing chamber system of claim 11 , further comprising a controller being configured to, when executed by a processor:
cause the one or more heaters to heat the showerhead; and
introduce a purge gas into the purge volume through the purge gas opening.

18. The processing chamber system of claim 17 , wherein the controller is configured to, when executed by the processor, cause the one or more heaters to heat the showerhead to a temperature within a range of about 270 degrees Celsius to about 350 degrees Celsius.

19. The processing chamber system of

Assignees

• Applied Materials Inc

Inventors

• Ghosh Kalyanjit
• Baluja Sanjeev
• Kulkarni Mayur G
• Srivastava Shailendra
• Ulavi Tejas
• Zhou Yusheng Alvin
• Bansal Amit Kumar
• Dash Priyanka
• Jiang Zhijun
• Balasubramanian Ganesh
• Ma Qiang
• Alayavalli Kaushik
• Zhang Yuxing
• Hwung Daniel
• Jafari Shawyon

Classifications

• H01J37/32449

  Gas control, e.g. control of the gas flow · CPC title

• H01J37/32513

  Sealing means, e.g. sealing between different parts of the vessel · CPC title

• H01J37/32862 Primary

  In situ cleaning of vessels and/or internal parts · CPC title

• H01J37/3244

  Gas supply means · CPC title

• H01J37/32834

  Exhausting · CPC title