Method of fabricating a magnetic stack arrangement of a laminated magnetic inductor

Patent metadata

Field	Value
Publication number	US-10597769-B2
Application number	US-201715479615-A
Country	US
Kind code	B2
Filing date	Apr 5, 2017
Priority date	Apr 5, 2017
Publication date	Mar 24, 2020
Grant date	Mar 24, 2020

Abstract

Embodiments are directed to a method of forming a magnetic stack arrangement of a laminated magnetic inductor having a high frequency peak quality factor (Q). A first magnetic stack is formed having one or more magnetic layers alternating with one or more insulating layers in a first inner region of a laminated magnetic inductor. A second magnetic stack is formed opposite a surface of the first magnetic stack in an outer region of the laminated magnetic inductor. A third magnetic stack is formed opposite a surface of the second magnetic stack in a second inner region of the laminated magnetic inductor. The insulating layers are formed such that a thickness of an insulating layer in the second magnetic stack is greater than a thickness of an insulating layer in the first magnetic stack.

First claim

What is claimed is:

1. A method of fabricating a magnetic stack arrangement of a laminated magnetic inductor, the method comprising:
forming a first magnetic stack comprising one or more magnetic layers alternating with one or more insulating layers in a first inner region of the laminated magnetic inductor;
forming a second magnetic stack comprising one or more magnetic layers alternating with one or more insulating layers opposite a surface of the first magnetic stack in an outer region of the laminated magnetic inductor; and
forming a third magnetic stack comprising one or more magnetic layers alternating with one or more insulating layers opposite a surface of the second magnetic stack in a second inner region of the laminated magnetic inductor;
wherein a thickness of an insulating layer in the second magnetic stack is greater than a thickness of an insulating layer in the first magnetic stack.

2. The method of claim 1 further comprising forming a first dielectric layer opposite a surface of the first magnetic stack.

3. The method of claim 2 further comprising forming a second dielectric layer opposite a surface of the third magnetic stack.

4. The method of claim 3 further comprising forming a conductive coil helically wrapping through the first and second dielectric layers.

5. The method of claim 4 , wherein the first and third magnetic stacks are positioned proximate to the conductive coil.

6. The method of claim 5 , wherein the second magnetic stack is positioned between the first and third magnetic stacks such that the second magnetic stack is further from the conductive coil than either the first magnetic stack or the second magnetic stack.

7. The method of claim 1 , wherein the one or more magnetic layers in the first magnetic stack comprise cobalt (Co), FeTaN, FeNi, FeAlO, or a combination thereof.

8. The method of claim 1 , wherein the one or more magnetic layers in the first magnetic stack comprises a thickness of about 50 nm to about 500 nm.

9. The method of claim 1 , wherein the one or more insulating layers in the first magnetic stack comprise alumina (Al 2 O 3 ), silicon dioxide (SiO 2 ), a silicon nitride, a silicon oxynitride (SiO x N y ), magnesium oxide (MgO), or a combination thereof.

10. The method of claim 1 , wherein the one or more insulating layers in the first magnetic stack comprises a thickness of about 0.5 nm to about 20 nm.

11. The method of claim 10 , wherein the one or more insulating layers in the first magnetic stack comprises a thickness of about 1 nm to about 5 nm.

12. The method of claim 1 , wherein the thickness of an insulating layer in the second magnetic stack is at least ten times greater than a thickness of an insulating layer in the first magnetic stack.

13. The method of claim 1 , wherein the thickness of an insulating layer in the second magnetic stack is at least twenty times greater than a thickness of an insulating layer in the first magnetic stack.

Assignees

• IBM

Inventors

• Deligianni Hariklia
• Doris Bruce B
• O'Sullivan Eugene J
• Wang Naigang

Classifications

• H01F17/0033

  with the coil helically wound around a magnetic core · CPC title

• H01F2017/0066

  with a magnetic layer · CPC title

• C23C16/06

  characterised by the deposition of metallic material · CPC title

• H01F41/046

  structurally combined with ferromagnetic material · CPC title

• C23C16/401

  containing silicon · CPC title