Wafer processing method

Patent metadata

Field	Value
Publication number	US-10586704-B2
Application number	US-201715824365-A
Country	US
Kind code	B2
Filing date	Nov 28, 2017
Priority date	Nov 29, 2016
Publication date	Mar 10, 2020
Grant date	Mar 10, 2020

Abstract

A processing method for a wafer having a plurality of streets inclined at 45° relative to a cleavage direction including a laser processing step of positioning a focusing point of a laser beam with a wavelength as to be transmitted through the wafer in the inside of the wafer, and applying the laser beam along the streets to form a plurality of modified layers, overlapping with one another in the wafer thickness direction, inside the wafer along each of the streets. In the laser processing step, m modified layers (m is a natural number not less than n·√2) are formed overlapping with one another in the wafer thickness direction, where n (n is a natural number) is the number of modified layers needing to be formed overlapping with one another in a wafer thickness direction when dividing a wafer having a plurality of streets parallel to a cleavage direction.

First claim

What is claimed is:

1. A method of processing a wafer, the method comprising:
providing a wafer having a plurality of streets inclined at 45° relative to a cleavage direction;
calculating a value for “m,” where “m” is a natural number of not less than n·√2, and further wherein “n” is a natural number and is the number of modified layers that would need to be formed overlapping with one another in a wafer thickness direction if dividing a wafer of the same configuration as said wafer having a plurality of streets inclined at 45° relative to a cleavage direction, except having a plurality of streets parallel to a cleavage direction;
a laser processing step of positioning, in the inside of the wafer, a focusing point of a laser beam having such a wavelength as to be transmitted through the wafer, and applying the laser beam along the streets to form a plurality of modified layers, overlapping with one another in a wafer thickness direction, inside the wafer along each of the streets; and
a dividing step of dividing the wafer along the modified layers into a plurality of chips after the laser processing step,
wherein in the laser processing step, said calculated value “m” is the number of modified layers formed.

2. The method according to claim 1 , wherein the wafer is a silicon wafer having a (100) plane as a major surface.

3. A method of processing a wafer, the method comprising:
providing a wafer having a plurality of streets inclined at 45° relative to a cleavage direction;
a laser processing step of positioning, in the inside of the wafer, a focusing point of a laser beam having such a wavelength as to be transmitted through the wafer, and applying the laser beam along the streets to form a plurality of modified layers, overlapping with one another in a wafer thickness direction, inside the wafer along each of the streets; and
a dividing step of dividing the wafer along the modified layers into a plurality of chips after the laser processing step,
wherein in the laser processing step, m modified layers (m is a natural number of not less than n·√2) are formed overlapping with one another in the wafer thickness direction, where n (n is a natural number) is the number of modified layers that would need to be formed overlapping with one another in a wafer thickness direction if dividing a wafer of the same configuration except having a plurality of streets parallel to a cleavage direction,
wherein said modified layers are separated, and spaced apart, from each other, and further wherein a distance between each of said modified layers is the same.

4. A method of processing a wafer, the method comprising:
providing a wafer having a plurality of streets inclined at 45° relative to a cleavage direction;
a laser processing step of positioning, in the inside of the wafer, a focusing point of a laser beam having such a wavelength as to be transmitted through the wafer, and applying the laser beam along the streets to form a plurality of modified layers, overlapping with one another in a wafer thickness direction, inside the wafer along each of the streets; and
a dividing step of dividing the wafer along the modified layers into a plurality of chips after the laser processing step,
wherein in the laser processing step, m modified layers (m is a natural number of not less than n·√2) are formed overlapping with one another in the wafer thickness direction, where n (n is a natural number) is the number of modified layers that would need to be formed overlapping with one another in a wafer thickness direction if dividing a wafer of the same configuration except having a plurality of streets parallel to a cleavage direction,
wherein a distance between a front surface of the wafer and a first modified layer and a distance between each modified layer is the same.

Assignees

• Disco Corp

Inventors

• Bae Taewoo

Classifications

• B23K26/53 Primary

  for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks · CPC title

• B23K2103/56

  being semiconducting · CPC title

• B24B41/005

  Feeding or manipulating devices specially adapted to grinding machines (feeding, loading or unloading work specially adapted to lapping machines B24B37/345) · CPC title

• B24B19/22

  characterised by a special design with respect to properties of the material of non-metallic articles to be ground · CPC title

• B24B47/20

  relating to feed movement · CPC title