Electric field switchable magnetic devices

Patent metadata

Field	Value
Publication number	US-10586579-B2
Application number	US-201816032716-A
Country	US
Kind code	B2
Filing date	Jul 11, 2018
Priority date	Mar 20, 2018
Publication date	Mar 10, 2020
Grant date	Mar 10, 2020

Abstract

A magnetic device may include a layer stack. The layer stack may include a first ferromagnetic layer; a non-magnetic spacer layer on the first ferromagnetic layer, where the non-magnetic spacer layer comprises at least one of Ru, Ir, Ta, Cr, W, Mo, Re, Hf, Zr, or V; a second ferromagnetic layer on the non-magnetic spacer layer; and an oxide layer on the second ferromagnetic layer. The magnetic device also may include a voltage source configured to apply a bias voltage across the layer stack to cause switching of a magnetic orientation of the second ferromagnetic layer without application of an external magnetic field or a current. A thickness and composition of the non-magnetic spacer layer may be selected to enable a switching direction of the magnetic orientation of the second ferromagnetic layer to be controlled by a sign of the bias voltage.

First claim

What is claimed is:

1. A magnetic device comprising:
a layer stack comprising:
a first ferromagnetic layer;
a non-magnetic spacer layer on the first ferromagnetic layer, wherein the non-magnetic spacer layer comprises at least one of Ru, Ir, Ta, Cr, W, Mo, Re, Hf, Zr, or V;
a second ferromagnetic layer on the non-magnetic spacer layer;
an oxide layer on the second ferromagnetic layer;

a voltage source configured to apply a bias voltage across the layer stack to cause switching of a magnetic orientation of the second ferromagnetic layer without application of an external magnetic field or a current, wherein a thickness and composition of the non-magnetic spacer layer is selected to enable a switching direction of the magnetic orientation of the second ferromagnetic layer to be controlled by a sign of the bias voltage, and wherein the thickness of non-magnetic spacer layer is selected to cause antiferromagnetic coupling of the first ferromagnetic layer and the second ferromagnetic layer in the absence of the bias voltage.

2. The magnetic device of claim 1 , wherein:
the first ferromagnetic layer comprises at least one of a FePd alloy, a FePt alloy, a CoPd alloy, a CoPt alloy, a MnAl alloy, a MnBi alloy, a MnGaN alloy, a MnGeN alloy, or a Mn-based Heusler alloy; and
the second ferromagnetic layer comprises at least one of a CoFeB alloy, a CoFe alloy, a Co-based alloy, a Fe-based alloy, a Co-based Heusler alloy, or a Mn-based Heusler alloy.

3. The magnetic device of claim 1 , wherein a sign of the bias voltage affects a sign or strength of the interlayer exchange coupling between the first ferromagnetic layer and the second ferromagnetic layer.

4. The magnetic device of claim 1 , further comprising:
a second non-magnetic layer comprising at least one of Ru, Ir, Ta, Cr, W, Mo, Re, Hf, Zr or V; and
a third ferromagnetic layer, wherein:
the first ferromagnetic layer is on the second non-magnetic layer and the second non-magnetic layer is on the third ferromagnetic layer;
a thickness and a composition of the second non-magnetic layer are selected such that the third ferromagnetic layer and the second ferromagnetic layer are antiferromagnetically coupled; and
the thickness and the composition of the second non-magnetic layer and a thickness and a composition of the non-magnetic layer are selected so that interlayer exchange coupling between the second ferromagnetic layer and the third ferromagnetic layer is stronger than interlayer exchange coupling between the first ferromagnetic layer and the second ferromagnetic layer.

5. The magnetic device of claim 1 , wherein the oxide layer is a tunnel barrier layer comprising MgO, further comprising a reference ferromagnetic layer on the tunnel barrier layer, wherein the magnetic device is a magnetic tunnel junction.

6. The magnetic device of claim 5 , wherein the reference ferromagnetic layer comprises a synthetic antiferromagnet.

7. The magnetic device of claim 1 , further comprising a write controller configured to control the voltage source to output a selected bias voltage.

8. The magnetic device of claim 7 , wherein the write controller is configured to control the voltage source to output a bias voltage configured to enable stable bi-directional or random telegraphic switching of the magnetic orientation of the second ferromagnetic layer at room temperature.

9. A method comprising:
controlling, by a write controller, a voltage source to output a positive bias voltage across a layer stack, wherein the layer stack comprises:
a first ferromagnetic layer;
a non-magnetic spacer layer on the first ferromagnetic layer, wherein the non-magnetic spacer layer comprises at least one of Ru, Ir, Ta, Cr, W, Mo, Re, Hf, Zr or V;
a second ferromagnetic layer on the non-magnetic spacer layer;
an oxide layer on the second ferromagnetic layer, wherein the positive bias voltage causes switching of a magnetic orientation of the second ferromagnetic layer from a first direction to a second direction without application of an external magnetic field or a current; and

controlling, by the write controller, the voltage source to output a negative bias voltage across the layer stack, wherein the negative bias voltage causes switching of the magnetic orientation of the second ferromagnetic layer from the second direction to the first direction without application of an external magnetic field or a current, wherein a thickness of non-magnetic spacer layer is selected to cause antiferromagnetic coupling of the first ferromagnetic layer and the second ferromagnetic layer in the absence of the bias voltage.

10. The method of claim 9 , wherein:
the first ferromagnetic layer comprises at least one of a FePd alloy, a FePt alloy, a CoPd alloy, a CoPt alloy, a MnAl alloy, a MnBi alloy, a MnGaN alloy, a MnGeN alloy, or a Mn-based Heusler alloy; and
the second ferromagnetic layer comprises at least one of a CoFeB alloy, a CoFe alloy, a Co-based alloy, a Fe-based alloy, a Co-based Heusler alloy, or a Mn-based Heusler alloy.

11. The method of claim 9 , wherein a sign of the bias voltage affects a sign or strength of the interlayer exchange coupling between the first ferromagnetic layer and the second ferromagnetic layer.

12. The method of claim 9 , wherein the layer stack further comprises:
a second non-magnetic layer comprising at least one of Ru, Ir, Ta, Cr, W, Mo, or V; and
a third ferromagnetic layer, wherein:
the first ferromagnetic layer is on the second non-magnetic layer and the second non-magnetic layer is on the third ferromagnetic layer;
a thickness and a composition of the second non-magnetic layer are selected such that the third ferromagnetic layer and the second ferromagnetic layer are antiferromagnetically couple; and
the thickness and the composition of the second non-magnetic layer and a thickness and a composition of the non-magnetic layer are selected so that interlayer exchange coupling between the second ferromagnetic layer and the third ferromagnetic layer is stronger than interlayer exchange coupling between the first ferromagnetic layer and the second ferromagnetic layer.

13. The method of claim 9 , wherein the oxide layer is a tunnel barrier layer comprising MgO, further comprising a reference ferromagnetic layer on the tunnel barrier layer, wherein the magnetic device is a magnetic tunnel junction.

14. The method of claim 13 , wherein the reference ferromagnetic layer comprises a synthetic antiferromagnet.

15. The method of claim 9 , further comprising:
controlling, by the write controller, the voltage source to output a bias voltage configured to enable stable bi-directional or random telegraphic switching of the magnetic orientation of the second ferromagnetic layer at room temperature.

16. A random bit stream generator comprising:
a magnetic device comprising:
a layer stack comprising:
a first ferromagnetic layer;
a non-magnetic spacer layer on the first ferromagnetic layer, wherein the non-magnetic spacer layer comprises at least one of Ru, Ir, Ta, Cr, W, Mo, Re, Hf, Zr, or V;
a second ferromagnetic layer on the non-magnetic spacer layer;
an oxide layer on the second ferromagnetic layer;

a voltage source configured to apply a bias voltage across the layer stack to cause switching of a magnetic orientation of the second ferromagnetic layer without application of an external magnetic field or a current, wherein a thickness and composition of the non-magnetic spacer layer is selected to enable a switching direction of the magnetic orientation of the second ferromagnetic layer to be controlled by a sign of the bias voltage, a

Assignees

• Univ Minnesota
• Univ Carnegie Mellon

Inventors

• Wang Jian-Ping
• Zhang Delin
• Majetich Sara A
• Bapna Mukund

Classifications

• B82Y25/00

  Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance · CPC title

• H01F10/1936

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• H01F10/3272

  by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets · CPC title

• H01F10/3286

  Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy · CPC title

• G11C11/161 Primary

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title