Photoelectric conversion film and photoelectric conversion device

Patent metadata

Field	Value
Publication number	US-10580915-B2
Application number	US-201615777850-A
Country	US
Kind code	B2
Filing date	Nov 28, 2016
Priority date	Nov 27, 2015
Publication date	Mar 3, 2020
Grant date	Mar 3, 2020

Abstract

According to the present disclosure, a photoelectric conversion film includes a plurality of semiconductor nanoparticles and a matrix phase provided around each of the plurality of semiconductor nanoparticles. The matrix phase includes a principal phase including a composite, which includes an organic molecule polymer and an inorganic material. A photoelectric conversion device includes a transparent electrically conductive film, a photoelectric conversion layer, a semiconductor substrate, and an electrode layer, which are layered on a glass substrate in this order. The photoelectric conversion layer includes the photoelectric conversion film.

First claim

The invention claimed is:

1. A photoelectric conversion film comprising:
a plurality of semiconductor nanoparticles; and
a matrix phase existing around each of the plurality of semiconductor nanoparticles,
wherein the matrix phase comprises a principal phase comprising a composite comprising a polymer of organic molecules and an inorganic material.

2. The photoelectric conversion film according to claim 1 ,
wherein both the polymer of organic molecules and the inorganic material of the composite are in contact with a plurality of adjacent ones of the plurality of semiconductor nanoparticles.

3. The photoelectric conversion film according to claim 1 ,
wherein, in the composite, in cross-sectional view, an area fraction of the inorganic material is larger than an area fraction of the polymer of organic molecules.

4. The photoelectric conversion film according to claim 1 ,
wherein the inorganic material exists in the matrix phase, from one of principal surfaces of the integrated film to a position middle in a thickness direction.

5. The photoelectric conversion film according to claim 1 ,
wherein, in the matrix phase, in cross-sectional view, a region in which both the polymer of organic molecules and the inorganic material exist and a region in which the polymer of organic molecules exists singly are layered.

6. The photoelectric conversion film according to claim 5 ,
wherein an area fraction of the region in which both the polymer of organic molecules and the inorganic material exist is larger than the area fraction of the region in which the polymer of organic molecules exists singly.

7. The photoelectric conversion film according to claim 1 , further comprising a layered portion between adjacent ones of the plurality of semiconductor nanoparticles, wherein
in the layered portion, the polymer of organic molecules and the inorganic material are layered.

8. The photoelectric conversion film according to claim 1 ,
wherein each of the organic molecules has 40 or less carbon atoms.

9. The photoelectric conversion film according to claim 1 ,
wherein each of the organic molecules has 5 or less carbon atoms and is straight chained.

10. The photoelectric conversion film according to claim 1 ,
wherein the inorganic material comprises a compound comprising an element selected from the group consisting of Al, Zn, Si, Ti, Cu, Ga, S, In, and Se and an element selected from the group consisting of 0, C, and N.

11. A photoelectric conversion device comprising:
a transparent electrically conductive film;
a photoelectric conversion layer;
a semiconductor substrate; and
an electrode layer,
wherein the transparent electrically conductive film, the photoelectric conversion layer, the semiconductor substrate, and the electrode layer are provided on a light-transmissive substrate and layered in this order, and
the photoelectric conversion layer comprises the photoelectric conversion film according to claim 1 .

Assignees

• Kyocera Corp

Inventors

• Inai Seiichiro
• Saito Masashi
• Ogawa Hiromitsu

Classifications

• H10P14/3461

  Nanoparticles · CPC title

• H10P14/3436

  being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds · CPC title

• H10P14/2905

  Silicon, silicon germanium or germanium · CPC title

• H10P14/265

  using solutions · CPC title

• B82Y10/00

  Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic · CPC title