Light emitting device, production method thereof, and display panel
US-9716230-B2 · Jul 25, 2017 · US
Semiconductor nanoparticle dispersion, photoelectric conversion element, and image pickup device
US2016293783A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016293783-A1 |
| Application number | US-201415038216-A |
| Country | US |
| Kind code | A1 |
| Filing date | Dec 17, 2014 |
| Priority date | Dec 27, 2013 |
| Publication date | Oct 6, 2016 |
| Grant date | — |
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Abstract
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A semiconductor nanoparticle dispersion is provided. The semiconductor nanoparticle including a plurality of semiconductor nanoparticles having a radius equal to or larger than an exciton Bohr radius; and a solvent dispersed with the plurality of semiconductor nanoparticles.
First claim
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1 . A semiconductor nanoparticle dispersion comprising: a plurality of semiconductor nanoparticles having a radius equal to or larger than an exciton Bohr radius; and a solvent dispersed with the plurality of semiconductor nanoparticles. 2 . The semiconductor nanoparticle dispersion according to claim 1 , wherein the semiconductor nanoparticles include a binary mixed crystal. 3 . The semiconductor nanoparticle dispersion according to claim 1 , wherein the plurality of semiconductor nanoparticles include first particles having a first radius and second particles having a second radius. 4 . The semiconductor nanoparticle dispersion according to claim 1 , wherein the semiconductor nanoparticles include a zinc selenide compound (ZnSe), and have a radius equal to or larger than about 3.9 nm that is an exciton Bohr radius of ZnSe. 5 . The semiconductor nanoparticle dispersion according to claim 4 , wherein the semiconductor nanoparticles include an n-type dopant within a range of about 10 17 to 10 19 cm −3 , wherein the n-type dopant is an impurity element including any one of Ga and Cl. 6 . The semiconductor nanoparticle dispersion according to claim 4 , wherein the semiconductor nanoparticles include a p-type dopant within a range of about 10 17 to 10 19 cm −3 , wherein the p-type dopant is an impurity element including any one of N, O, and Li. 7 . The semiconductor nanoparticle dispersion according to claim 1 , wherein the semiconductor nanoparticles include a zinc telluride compound (ZnTe), and have a radius equal to or larger than about 5.4 nm that is an exciton Bohr radius of ZnTe. 8 . The semiconductor nanoparticle dispersion according to claim 7 , wherein the semiconductor nanoparticles include an n-type dopant within a range of about 10 17 to 10 19 cm −3 , wherein the n-type dopant is an impurity element including any one of Ga and Cl. 9 . The semiconductor nanoparticle dispersion according to claim 7 , wherein the semiconductor nanoparticles include a p-type dopant within a range of about 10 17 to 10 19 cm −3 , wherein the p-type dopant is an impurity element including N, O, and Li. 10 . The semiconductor nanoparticle dispersion according to claim 1 , wherein the radius is an average radius associated with the semiconductor nanoparticles. 11 . A photoelectric conversion element comprising: a photoelectric conversion layer that contains a plurality of semiconductor nanoparticles having a radius equal to or larger than an exciton Bohr radius; and a pair of electrodes opposing to each other with the photoelectric conversion layer in between. 12 . The photoelectric conversion element according to claim 11 , wherein a radius of the semiconductor nanoparticles is equal to or smaller than one-twentieth of absorption peak wavelength of the photoelectric conversion layer. 13 . The photoelectric conversion element according to claim 11 , wherein the semiconductor nanoparticles include a binary mixed crystal. 14 . The photoelectric conversion element according to claim 11 , wherein the plurality of semiconductor nanoparticles includes first particles having a first radius and second particles having a second radius. 15 . The photoelectric conversion element according to claim 11 , wherein the semiconductor nanoparticles include a zinc selenide compound (ZnSe), and have a radius equal to or larger than about 3.9 nm that is an exciton Bohr radius of ZnSe. 16 . The photoelectric conversion element according to claim 15 , wherein the semiconductor nanoparticles include an n-type dopant within a range of about 10 17 to 10 19 cm −3 , wherein the n-type dopant is an impurity element including any one of Ga and Cl. 17 . The photoelectric conversion element according to claim 15 , wherein the semiconductor nanoparticles include a p-type dopant within a range of about 10 17 to 10 19 cm −3 , wherein the p-type dopant is an impurity element including any one of N, O, and Li. 18 . The photoelectric conversion element according to claim 11 , wherein the semiconductor nanoparticles include a zinc telluride compound (ZnTe), and have a radius equal to or larger than about 5.4 nm that is an exciton Bohr radius of ZnTe. 19 . The photoelectric conversion element according to claim 18 , wherein the semiconductor nanoparticles include an n-type dopant within a range of about 10 17 to 10 19 cm −3 , wherein the n-type dopant is an impurity element including any one of Ga and Cl. 20 . The photoelectric conversion element according to claim 18 , wherein the semiconductor nanoparticles include a p-type dopant within a range of about 10 17 to 10 19 cm −3 , wherein the p-type dopant is an impurity element including any one of N, O, and Li. 21 . The photoelectric conversion element according to claim 11 , wherein the radius is an average radius of the semiconductor nanoparticles. 22 . An image pickup device including a plurality of photoelectric conversion elements as pixels, at least one of the photoelectric conversion elements comprising: a photoelectric conversion layer that contains a plurality of semiconductor nanoparticles having a radius equal to or larger than an exciton Bohr radius; and a pair of electrodes opposing to each other with the photoelectric conversion layer in between.
Assignees
Inventors
Classifications
Nanoparticles · CPC title
Tellurides · CPC title
- H10P14/3431Primary
Selenides · CPC title
using solutions · CPC title
- H10F77/1233Primary
characterised by the dopants · CPC title
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Frequently asked questions
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- What does patent US2016293783A1 cover?
- A semiconductor nanoparticle dispersion is provided. The semiconductor nanoparticle including a plurality of semiconductor nanoparticles having a radius equal to or larger than an exciton Bohr radius; and a solvent dispersed with the plurality of semiconductor nanoparticles.
- Who is the assignee on this patent?
- Sony Corp
- What technology area does this patent fall under?
- Primary CPC classification H10P14/3431. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Oct 06 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).