Devices including a diffusion barrier layer

Patent metadata

Field	Value
Publication number	US-10580440-B2
Application number	US-201916260910-A
Country	US
Kind code	B2
Filing date	Jan 29, 2019
Priority date	Mar 22, 2015
Publication date	Mar 3, 2020
Grant date	Mar 3, 2020

Abstract

Devices having an air bearing surface (ABS), the devices including a write pole; a near field transducer (NFT) that includes a peg and a disc, wherein the peg is at the ABS of the device; a heat sink positioned adjacent the disc of the NFT; a dielectric gap positioned adjacent the peg of the NFT at the ABS of the device; and a conformal diffusion barrier layer positioned between the write pole and the dielectric gap, the disc, and the heat sink, wherein the conformal diffusion barrier layer forms at least one angle that is not greater than 135°.

First claim

What is claimed is:

1. A device having an air bearing surface (ABS), the device comprising:
a write pole;
a near field transducer (NFT) comprising a peg and a disc, wherein the peg is at the ABS of the device;
a heat sink positioned adjacent the disc of the NFT;
a dielectric gap positioned adjacent the peg of the NFT at the ABS of the device; and
a conformal diffusion barrier layer positioned between the write pole and the dielectric gap, the disc, and the heat sink, wherein the conformal diffusion barrier layer includes a first portion that is substantially internally planar between the dielectric gap and the write pole, a second portion that is substantially internally planar between the disc and the write pole and a third portion that is substantially internally planar between the heat sink and the write pole.

2. The device according to claim 1 , wherein the conformal diffusion barrier layer comprises molybdenum (Mo), tantalum (Ta), niobium (Nb), hafnium (Hf), neodymium (Nd), holmium (Ho), molybdenum (Mo), tungsten (W), iridium (Ir), rhodium (Rh), ruthenium (Ru), rhenium (Re), titanium (Ti), zirconium (Zr), nickel (Ni), uranium (U), yttrium (Y), vanadium (V), or combinations thereof.

3. The device according to claim 1 , wherein the conformal diffusion barrier layer comprises ruthenium (Ru), iridium (Ir), tantalum (Ta), zirconium (Zr), niobium (Nb), hafnium (Hf), or combinations thereof.

4. The device according to claim 1 , wherein the conformal diffusion barrier layer comprises ruthenium (Ru), iridium (Ir), tantalum (Ta), zirconium (Zr), or combinations thereof.

5. The device according to claim 1 , wherein the conformal diffusion barrier layer is positioned directly adjacent the write pole.

6. The device according to claim 1 , wherein the conformal diffusion barrier layer has a thickness from about 5 nanometers (nm) to about 30 nm.

7. The device according to claim 1 further comprising a peg coupler layer, the peg coupler layer positioned between the conformal diffusion barrier layer and the dielectric gap, NFT and heat sink.

8. The device according to claim 7 , wherein the peg coupler layer comprises gold (Au) or an alloy thereof.

9. The device according to claim 7 , wherein the peg coupler layer has a thickness from about 8 nm to about 25 nm.

10. The device according to claim 1 further comprising an etch stop layer, the etch stop layer positioned adjacent the conformal diffusion barrier layer on the opposite side of the write pole.

11. The device according to claim 10 , wherein the etch stop layer comprises tantalum (Ta), titanium (Ti), chromium (Cr), tantalum nitride (TaN), titanium nitride (TiN), or combinations thereof.

12. A device having an air bearing surface (ABS), the device comprising:
a write pole;
a near field transducer (NFT) comprising a peg and a disc, wherein the peg is at the ABS of the device;
a heat sink positioned adjacent the disc of the NFT;
a dielectric gap positioned adjacent the peg of the NFT at the ABS of the device; and
a conformal diffusion barrier layer positioned between the write pole and the dielectric gap, the disc, and the heat sink, wherein the conformal diffusion barrier layer includes a first portion that is substantially internally planar between the dielectric gap and the write pole, a second portion that is substantially internally planar between the disc and the write pole and a third portion that is substantially internally planar between the heat sink and the write pole and comprises molybdenum (Mo), tantalum (Ta), niobium (Nb), hafnium (Hf), neodymium (Nd), holmium (Ho), molybdenum (Mo), tungsten (W), iridium (Ir), rhodium (Rh), ruthenium (Ru), rhenium (Re), titanium (Ti), zirconium (Zr), nickel (Ni), uranium (U), yttrium (Y), vanadium (V), or combinations thereof.

13. The device according to claim 12 , wherein the conformal diffusion barrier layer comprises zirconium (Zr), ruthenium (Ru), or combinations thereof.

14. The device according to claim 12 , wherein the NFT comprises gold (Au) or an alloy thereof.

15. The device according to claim 12 , wherein the conformal diffusion barrier has a thickness from about 5 nm to about 30 nm.

16. The device according to claim 12 further comprising a peg coupler layer, the peg coupler layer positioned between the conformal diffusion barrier layer and the dielectric gap, NFT and heat sink.

17. The device according to claim 12 further comprising an etch stop layer, the etch stop layer positioned adjacent the conformal diffusion barrier layer on the opposite side of the write pole.

18. A device having an air bearing surface (ABS), the device comprising:
a write pole;
a near field transducer (NFT) comprising a peg and a disc, wherein the peg is at the ABS of the device;
a heat sink positioned adjacent the disc of the NFT;
a dielectric gap positioned adjacent the peg of the NFT at the ABS of the device; and
a conformal diffusion barrier layer positioned between the write pole and the dielectric gap, the disc, and the heat sink, wherein the conformal diffusion barrier layer includes a first portion that is substantially internally planar between the dielectric gap and the write pole, a second portion that is substantially internally planar between the disc and the write pole and a third portion that is substantially internally planar between the heat sink and the write pole and comprises rhenium (Re), vanadium (V), or combinations thereof.

19. The device according to claim 18 , wherein the conformal diffusion barrier layer forms at least one angle that is not greater than 160°.

20. The device according to claim 18 , wherein the conformal diffusion barrier layer has a thickness from about 8 nm to about 15 nm.

Assignees

• Seagate Technology Llc

Inventors

• Sahoo Sarbeswar
• Blaber Martin
• Brickner Hui
• Zhao Tong
• Cheng Yuhang
• Duda John
• Lee Tae-Woo

Classifications

• G11B5/6088

  Optical waveguide in or on flying head · CPC title

• G11B5/3136

  for reducing the pole-tip-protrusion at the head transducing surface, e.g. caused by thermal expansion of dissimilar materials · CPC title

• G11B2005/0021

  Thermally assisted recording using an auxiliary energy source for heating the recording layer locally to assist the magnetization reversal · CPC title

• G11B5/314 Primary

  where the layers are extra layers normally not provided in the transducing structure, e.g. optical layers (G11B5/3196 takes precedence) · CPC title

• G11B5/3116

  Shaping of layers, poles or gaps for improving the form of the electrical signal transduced, e.g. for shielding, contour effect, equalizing, side flux fringing, cross talk reduction between heads or between heads and information tracks (G11B5/3113, G11B5/245 take precedence) · CPC title