Ruthenium precursors for ALD and CVD thin film deposition and uses thereof

Patent metadata

Field	Value
Publication number	US-10577386-B2
Application number	US-201715831621-A
Country	US
Kind code	B2
Filing date	Dec 5, 2017
Priority date	Dec 6, 2016
Publication date	Mar 3, 2020
Grant date	Mar 3, 2020

Abstract

Metal coordination complexes comprising a metal atom coordinated to at least one diazabutadiene ligand having a structure represented by:

where each R is independently a C1-C13 alkyl or aryl group and each R′ is independently H, C1-C10 alkyl or aryl group are described. Processing methods using the metal coordination complexes are also described.

First claim

What is claimed is:

1. A processing method comprising sequentially exposing a substrate to a first reactive gas comprising a ruthenium-containing compound and a second reactive gas to form a ruthenium-containing film, the ruthenium-containing compound having the representative formula [RN═CH(R′)(R′)HC═NR] 2 Ru(L) 2 , where each R is independently a C1-C13 alkyl or aryl group and each R′ is independently H, C1-C10 alkyl or aryl group and L is a neutral donor ligand comprising one or more of NR″ 3 , PR″ 3 , dimethyl ether (DME), tetrahydrofuran (THF) or tetramethylethylenediamine (TMEDA), where each R″ is independently H, C1-C6 alkyl or aryl group.

2. The method of claim 1 , wherein at least one of the R′ groups is not hydrogen.

3. The method of claim 1 , wherein the second reactive gas comprises one or more of H 2 , NH 3 , hydrazine, hydrazine derivatives, or plasmas thereof.

4. The method of claim 1 , wherein the second reactive gas comprises one or more of O 2 , O 3 , H 2 O, NO 2 , N 2 O, or plasmas thereof.

5. The method of claim 1 , wherein the second reactive gas comprises a silicon-containing compound and the ruthenium-containing film comprises ruthenium silicide (RuSi x ).

6. The method of claim 1 , wherein the ruthenium-containing film comprises greater than or equal to about 95 atomic percent ruthenium.

7. The method of claim 1 , wherein the sum of C, N, 0 and halogen atoms is less than or equal to about 5 atomic percent of the ruthenium-containing film.

8. A processing method comprising exposing a substrate to a first reactive gas and a second reactive gas to form a ruthenium-containing film, the first reactive gas having a representative formula

where each R is independently a C1-C13 alkyl or aryl group and each R′ is independently H, C1-C10 alkyl or aryl group and L is a neutral donor ligand, at least one R′ group is not a hydrogen atom, wherein L comprises one or more of NR″ 3 , PR″ 3 , dimethyl ether (DME), tetrahydrofuran (THF) or tetramethylethylenediamine (TMEDA), where each R″ is independently H, C1-C6 alkyl or aryl group.

9. The method of claim 8 , wherein the substrate is exposed to the first reactive gas and the second reactive gas sequentially.

10. The method of claim 8 , wherein the substrate is exposed to the first reactive gas and the second reactive gas simultaneously.

11. The method of claim 8 , wherein the second reactive gas comprises one or more of H 2 , NH 3 , hydrazine, hydrazine derivatives, O 2 , O 3 , H 2 O, NO 2 , N 2 O, or plasmas thereof.

Assignees

• Applied Materials Inc

Inventors

• Schmiege Benjamin
• Anthis Jeffrey W
• Thompson David

Classifications

• C23C16/18

  from metallo-organic compounds · CPC title

• C23C16/405

  of refractory metals or yttrium · CPC title

• C23C16/45553

  characterized by the use of precursors specially adapted for ALD · CPC title

• C23C16/34

  Nitrides {(C23C16/303 takes precedence)} · CPC title

• C07F15/0053 Primary

  without a metal-carbon linkage · CPC title