Hermetic sealed electrical connector with high-speed transmission for hard disk drive

Patent metadata

Field	Value
Publication number	US-10575424-B2
Application number	US-201716086513-A
Country	US
Kind code	B2
Filing date	Feb 20, 2017
Priority date	Mar 24, 2016
Publication date	Feb 25, 2020
Grant date	Feb 25, 2020

Abstract

Embodiments disclosed herein generally relate to hermetic electrical connectors used in hard disk drives. The hermetic electrical connector includes a barrier structure having a first plurality of connecting pads disposed on a first surface of the barrier structure and a second plurality of connecting pads disposed on a second surface of the barrier structure opposite the first surface. A plurality of conductors is disposed within the barrier structure, and each conductor is coupled to a connecting pad of the first plurality of connecting pads and a corresponding connecting pad of the second plurality of connecting pads. The barrier structure further includes a dielectric material between the first and second surfaces, and one or more layers embedded in the dielectric material. The addition of the layers helps choke the helium gas flow, thus improving sealing of the electrical connector while maintaining high-speed electrical transmission.

First claim

What is claimed is:

1. A barrier structure for hermetically sealing an electronic device, comprising:
a dielectric material having a first surface and a second surface opposite the first surface;
one or more layers embedded in the dielectric material, wherein the one or more layers each includes a plurality of openings; and
a plurality of conductors embedded in the dielectric material, wherein each conductor extends through a corresponding opening of the plurality of openings of each layer.

2. The barrier structure of claim 1 , wherein the barrier structure is centrally-located within a hermetic electrical connector.

3. The barrier structure of claim 1 , wherein a layer of the one or more layers comprises aluminum, copper, ceramic, quartz, borosilicate glass, aluminosilicate glass, neoprene, butyl rubber, or nitrile rubber (Buna-N).

4. The barrier structure of claim 1 , wherein the one or more layers comprise two layers.

5. The barrier structure of claim 1 , wherein the one or more layers comprise one layer.

6. The barrier structure of claim 1 , wherein a conductor of the plurality of conductors is concentric with a corresponding opening of the plurality of openings, and the conductor is spaced apart from a layer of the one or more layers.

7. The barrier structure of claim 6 , wherein the conductor is spaced apart from the layer by about at least 150 microns.

8. The barrier structure of claim 6 , wherein the conductor is spaced apart from the layer by about 150 microns to about 500 microns.

9. The barrier structure of claim 1 , wherein an opening of the plurality of openings has a diameter of about at least 600 microns.

10. The barrier structure of claim 1 , wherein an opening of the plurality of openings has a diameter equal to a diameter of a conductor of the plurality of conductors plus at least 300 microns.

11. A barrier structure for hermetically sealing an electronic device, comprising:
a dielectric material having a first surface and a second surface opposite the first surface;
a first plurality of connecting pads disposed on the first surface;
a second plurality of connecting pads disposed on the second surface;
a plurality of conductors embedded in the dielectric material, wherein each conductor has a first end adjacent a corresponding connecting pad of the first plurality of connecting pads and a second end adjacent a corresponding connecting pad of the second plurality of connecting pads;
a first ground layer embedded in the dielectric material, wherein the first ground layer is coplanar with the first end of each conductor;
a second ground layer embedded in the dielectric material, wherein the second ground layer is coplanar with the second end of each conductor; and
one or more layers embedded in the dielectric material, wherein the one or more layers are located between the first and second ground layers.

12. The barrier structure of claim 11 , wherein a layer of the one or more layers comprises aluminum, copper, ceramic, quartz, borosilicate glass, aluminosilicate glass, neoprene, butyl rubber, or nitrile rubber (Buna-N).

13. The barrier structure of claim 11 , wherein the one or more layers each includes a plurality of openings.

14. The barrier structure of claim 13 , wherein a conductor of the plurality of conductors is concentric with a corresponding opening of the plurality of openings, and the conductor is spaced apart from a layer of the one or more layers.

15. The barrier structure of claim 14 , wherein the conductor is spaced apart from the layer by about at least 150 microns.

16. The barrier structure of claim 14 , wherein the conductor is spaced apart from the layer by about 150 microns to about 500 microns.

17. An electronic device, comprising:
a hermetic electrical connector, comprising:
an external connector;
an internal connector; and
a barrier structure disposed between the external connector and the internal connector, wherein the barrier structure comprises:
a dielectric material having a first surface and a second surface opposite the first surface;
one or more layers embedded in the dielectric material, wherein the one or more layers each includes a plurality of openings; and
a plurality of conductors embedded in the dielectric material, wherein each conductor extends through a corresponding opening of the plurality of openings of each layer.

18. The electronic device of claim 17 , wherein a layer of the one or more layers comprises aluminum, copper, ceramic, quartz, borosilicate glass, aluminosilicate glass, neoprene, butyl rubber, or nitrile rubber (Buna-N).

19. The electronic device of claim 17 , wherein an opening of the plurality of openings has a diameter equal to a diameter of a conductor of the plurality of conductors plus at least 300 microns.

20. The electronic device of claim 17 , wherein an opening of the plurality of openings has a diameter equal to a diameter of a conductor of the plurality of conductors plus about 300 microns to about 1000 microns.

Assignees

• Western Digital Tech Inc

Inventors

• Onobu Yuta
• Hayakawa Takako
• Sudo Kimihiko
• Choe Seong-Hun
• Nagata Takehito
• Soga Yuji
• Nishiyama Nobumasa
• Nagaoka Kazuhiro

Classifications

• G11B25/043

  using rotating discs · CPC title

• G11B33/148

  Reducing friction, adhesion, drag · CPC title

• H01R13/521

  Sealing between contact members and housing, e.g. sealing insert · CPC title

• G11B33/122

  Arrangements for providing electrical connections, e.g. connectors, cables, switches · CPC title

• G11B33/1466 Primary

  sealing gaskets, (gasket in general F16J) · CPC title