Perpendicularly Magnetized Ferromagnetic Layers Having an Oxide Interface Allowing for Improved Control of Oxidation
US-2018005746-A1 · Jan 4, 2018 · US
Tunnel magnetoresistive effect element
US10573449B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10573449-B2 |
| Application number | US-201716081022-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 16, 2017 |
| Priority date | Oct 16, 2017 |
| Publication date | Feb 25, 2020 |
| Grant date | Feb 25, 2020 |
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Abstract
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A TMR element includes a magnetic tunnel junction element unit and a side wall portion that includes an insulation material and is disposed on a side surface of the magnetic tunnel junction element unit. The magnetic tunnel junction element unit includes a reference layer, a magnetization free layer, a tunnel barrier layer that is stacked in a stack direction between the reference layer and the magnetization free layer, and a cap layer is stacked on the side of the magnetization free layer opposite to the tunnel barrier layer side. The side wall portion includes a first region that includes the insulation material and covers a side surface of at least one of the reference layer, the tunnel barrier layer, the magnetization free layer, or the cap layer of the magnetic tunnel junction element unit.
First claim
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The invention claimed is: 1. A tunnel magnetoresistive effect element comprising: a magnetic tunnel junction element unit; and a side wall portion including an insulation material and being disposed on a side surface of the magnetic tunnel junction element unit, wherein: the magnetic tunnel junction element unit includes a reference layer, a magnetization free layer, a tunnel barrier layer stacked along a stack direction between the reference layer and the magnetization free layer, and a cap layer stacked on the side of the magnetization free layer opposite to the tunnel barrier layer side, the side wall portion includes a first region including the insulation material and covering a side surface of at least one of the reference layer, the tunnel barrier layer, the magnetization free layer, or the cap layer of the magnetic tunnel junction element unit, the first region includes, as a contained chemical element, at least one of chemical elements except oxygen constituting the at least one of the reference layer, the tunnel barrier layer, the magnetization free layer, or the cap layer of the magnetic tunnel junction element unit, and a distance from an outer periphery of the first region to a side surface of the tunnel barrier layer is greater than a distance from the outer periphery of the first region to a side surface of the cap layer. 2. A tunnel magnetoresistive effect element comprising: a magnetic tunnel junction element unit; and a side wall portion including an insulation material and being disposed on a side surface of the magnetic tunnel junction element unit, wherein: the magnetic tunnel junction element unit includes a reference layer, a magnetization free layer, a tunnel barrier layer stacked along a stack direction between the reference layer and the magnetization free layer, and a cap layer stacked on the side of the magnetization free layer opposite to the tunnel barrier layer side, the side wall portion includes a first region including the insulation material and covering a side surface of at least one of the reference layer, the tunnel barrier layer, the magnetization free layer, or the cap layer of the magnetic tunnel junction element unit, the first region includes, as a contained chemical element, at least one of chemical elements except oxygen constituting the at least one of the reference layer, the tunnel barrier layer, the magnetization free layer, or the cap layer of the magnetic tunnel junction element unit, a magnetization direction of the reference layer is substantially fixed along the stack direction, the cap layer includes a perpendicular magnetization inducing layer, and the perpendicular magnetization inducing layer imparts magnetic anisotropy along the stack direction to the magnetization free layer. 3. A tunnel magnetoresistive effect element comprising: a magnetic tunnel junction element unit; and a side wall portion including an insulation material and being disposed on a side surface of the magnetic tunnel junction element unit, wherein: the magnetic tunnel junction element unit includes a reference layer, a magnetization free layer, a tunnel barrier layer stacked along a stack direction between the reference layer and the magnetization free layer, and a cap layer stacked on the side of the magnetization free layer opposite to the tunnel barrier layer side, the side wall portion includes a first region including the insulation material and covering a side surface of at least one of the reference layer, the tunnel barrier layer, the magnetization free layer, or the cap layer of the magnetic tunnel junction element unit, the first region includes, as a contained chemical element, at least one of chemical elements except oxygen constituting the at least one of the reference layer, the tunnel barrier layer, the magnetization free layer, or the cap layer of the magnetic tunnel junction element unit, and the tunnel barrier layer is formed of an oxide material having a spinel structure represented by General Formula AB 2 O 4 , where: A is at least one chemical element selected from a group consisting of Mg and Zn, and B is at least one chemical element selected from a group consisting of Al, Ga, and In. 4. A tunnel magnetoresistive effect element comprising: a magnetic tunnel junction element unit; and a side wall portion including an insulation material and being disposed on a side surface of the magnetic tunnel junction element unit, wherein: the magnetic tunnel junction element unit includes a reference layer, a magnetization free layer, a tunnel barrier layer stacked along a stack direction between the reference layer and the magnetization free layer, and a cap layer stacked on the side of the magnetization free layer opposite to the tunnel barrier layer side, the side wall portion includes: a first region including the insulation material and covering a side surface of at least one of the reference layer, the tunnel barrier layer, the magnetization free layer, or the cap layer of the magnetic tunnel junction element unit, and a second region including the insulation material and covering an outer periphery of the first region, the first region is positioned between the magnetic tunnel junction element unit and the second region, and includes, as a contained chemical element, at least one of chemical elements except oxygen constituting the at least one of the reference layer, the tunnel barrier layer, the magnetization free layer, or the cap layer of the magnetic tunnel junction element unit, a magnetization direction of the reference layer is substantially fixed along the stack direction, the cap layer includes a perpendicular magnetization inducing layer, and the perpendicular magnetization inducing layer imparts magnetic anisotropy along the stack direction to the magnetization free layer. 5. A tunnel magnetoresistive effect element comprising: a magnetic tunnel junction element unit; and a side wall portion including an insulation material and being disposed on a side surface of the magnetic tunnel junction element unit, wherein: the magnetic tunnel junction element unit includes a reference layer, a magnetization free layer, a tunnel barrier layer stacked along a stack direction between the reference layer and the magnetization free layer, and a cap layer stacked on the side of the magnetization free layer opposite to the tunnel barrier layer side, the side wall portion includes: a first region including the insulation material and covering a side surface of at least one of the reference layer, the tunnel barrier layer, the magnetization free layer, or the cap layer of the magnetic tunnel junction element unit, and a second region including the insulation material and covering an outer periphery of the first region, the first region is positioned between the magnetic tunnel junction element unit and the second region, and includes, as a contained chemical element, at least one of chemical elements except oxygen constituting the at least one of the reference layer, the tunnel barrier layer, the magnetization free layer, or the cap layer of the magnetic tunnel junction element unit, and the tunnel barrier layer is formed of an oxide material having a spinel structure represented by General Formula AB 2 O 4 , where: A is at least one chemical element selected from a group consisting of Mg and Zn, and B is at least one chemical element selected from a group consisting of Al, Ga, and In. 6. A tunnel magnetoresistive effect element comprising: a magnetic tunnel junction element unit; and a side wall portion including an insulation material and being disposed on a side surface of the magnetic tunnel junction element unit, wherein: the magnetic tunnel junction element unit includes a reference la
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Classifications
Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy · CPC title
in patterns, e.g. by lithography · CPC title
by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets · CPC title
insulating or semiconductive spacer · CPC title
Ferrites · CPC title
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Frequently asked questions
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- What does patent US10573449B2 cover?
- A TMR element includes a magnetic tunnel junction element unit and a side wall portion that includes an insulation material and is disposed on a side surface of the magnetic tunnel junction element unit. The magnetic tunnel junction element unit includes a reference layer, a magnetization free layer, a tunnel barrier layer that is stacked in a stack direction between the reference layer and the…
- Who is the assignee on this patent?
- Tdk Corp
- What technology area does this patent fall under?
- Primary CPC classification H01F10/3259. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 25 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).