Method to improve film stability

Patent metadata

Field	Value
Publication number	US-10566188-B2
Application number	US-201816035983-A
Country	US
Kind code	B2
Filing date	Jul 16, 2018
Priority date	May 17, 2018
Publication date	Feb 18, 2020
Grant date	Feb 18, 2020

Abstract

Embodiments of the present disclosure generally relate to a film treatment process. In one embodiment, a transition metal oxide layer including a dopant is deposited on a substrate. After the doped transition metal oxide layer is deposited, a high pressure annealing process is performed on the doped transition metal oxide layer to densify the doped transition metal oxide without outgassing of the dopant. The high pressure annealing process is performed in an ambient environment including the dopant and at a pressure greater than 1 bar.

First claim

What is claimed is:

1. A method, comprising:
depositing a doped transition metal oxide layer on a substrate at a first temperature, the doped transition metal oxide layer comprising a dopant; and
annealing the doped transition metal oxide layer in a processing chamber at a chamber pressure greater than about 1 bar and in an ambient environment comprising the dopant.

2. The method of claim 1 , wherein the doped transition metal oxide layer is a carbon-doped nickel (II) oxide layer.

3. The method of claim 1 , wherein the doped transition metal oxide layer is annealed at a temperature ranging from about 200 degrees Celsius to about 500 degrees Celsius.

4. The method of claim 1 , wherein the chamber pressure ranges from about 2 bars to about 50 bars.

5. The method of claim 4 , wherein the chamber pressure ranges from about 10 bars to about 45 bars.

6. The method of claim 1 , wherein the annealing is performed at a second temperature greater than the first temperature.

7. The method of claim 6 , wherein the first temperature is about 350 degrees Celsius.

8. A method, comprising:
depositing a doped transition metal oxide layer on a first electrode, the doped transition metal oxide layer comprising a dopant;
annealing the doped transition metal oxide layer in a processing chamber at a chamber pressure greater than about 1 bar and in an ambient environment comprising the dopant; and
depositing a metal layer over the doped transition metal oxide layer.

9. The method of claim 8 , wherein the dopant is carbon.

10. The method of claim 9 , wherein the ambient environment comprises CO 2 gas.

11. The method of claim 10 , wherein the doped transition metal oxide layer comprises carbon-doped nickel (II) oxide layer.

12. The method of claim 8 , further comprising depositing a second electrode on the doped transition metal oxide layer, wherein the first electrode and the second electrode each comprise a metal that is different from the metal layer, and wherein the metal layer is deposited on the second electrode.

13. The method of claim 12 , wherein the metal layer comprises aluminum and the metal is iridium or platinum.

14. The method of claim 8 , wherein the chamber pressure ranges from about 2 bars to about 50 bars.

15. The method of claim 14 , wherein the chamber pressure ranges from about 10 bars to about 45 bars.

16. The method of claim 1 , wherein the annealing is performed at a temperature ranging from about 200 degrees Celsius to about 500 degrees Celsius.

17. A method, comprising:
depositing a carbon-doped nickel (II) oxide layer on a substrate at a first temperature;
annealing the carbon-doped nickel (II) oxide layer in a processing chamber at a chamber pressure greater than about 1 bar and in a carbon-containing ambient environment; and
depositing a metal layer over the carbon-doped nickel (II) oxide layer at a second temperature greater than the first temperature.

18. The method of claim 17 , wherein the chamber pressure ranges from about 2 bars to about 50 bars.

19. The method of claim 17 , wherein the first temperature is about 350 degrees Celsius and the second temperature is about 400 degrees Celsius.

20. The method of claim 17 , wherein the annealing is performed at a temperature ranging from about 200 degrees Celsius to about 500 degrees Celsius.

Assignees

• Applied Materials Inc

Inventors

• Clemons Maximillian
• Frei Michel Ranjit
• Pakala Mahendra
• Naik Mehul B
• Nemani Srinivas D
• Yieh Ellie Y

Classifications

• H10P14/6903

  containing silicon · CPC title

• H10P14/6506

  Formation of intermediate materials · CPC title

• H10P14/6334

  using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329) · CPC title

• H10P14/6529 Primary

  by exposure to a gas or vapour · CPC title

• H01L21/02123

  Electricity · mapped topic