Method for making carbon fiber film

US10563325B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10563325-B2
Application numberUS-201715598271-A
CountryUS
Kind codeB2
Filing dateMay 17, 2017
Priority dateMay 20, 2016
Publication dateFeb 18, 2020
Grant dateFeb 18, 2020

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A method for making carbon fiber film includes growing a carbon nanotube array on a surface of a growth substrate. A carbon nanotube film is pulled out from the carbon nanotube array, and pass through a reaction room. A negative voltage is applied to the carbon nanotube film. A carrier gas and a carbon source gas are supplied to the reaction room to form graphite sheets on the carbon nanotube film.

First claim

Opening claim text (preview).

What is claimed is: 1. A method for making carbon fiber film, the method comprising: providing a carbon nanotube array comprising a plurality of first carbon nanotubes on a surface of a growth substrate; pulling out a carbon nanotube film, comprising a plurality of second carbon nanotubes from the carbon nanotube array; and passing the carbon nanotube film through a reaction room; applying a negative voltage to the carbon nanotube film; and supplying a carrier gas and a carbon source gas to the reaction room and heating the reaction room to be a temperature in a range from about 800 degrees Celsius to about 1000 degrees Celsius. 2. The method of claim 1 , wherein the negative voltage is in a range from about −6000 V to about −600 V. 3. The method of claim 1 , wherein the applying the negative voltage to the carbon nanotube film is achieved by applying the negative voltage to the carbon nanotube array. 4. The method of claim 3 , wherein the growth substrate is a silicon wafer with an oxidized layer thereon, and the applying the negative voltage to the carbon nanotube array is achieved by applying the negative voltage to the plurality of first carbon nanotubes. 5. The method of claim 3 , wherein a material of the growth substrate is silicon, and the applying the negative voltage to the carbon nanotube array is achieved by applying the negative voltage to the growth substrate. 6. The method of claim 1 , wherein the carbon nanotube film comprises an end, and the end is passed through the reaction room and fixed on a conductive supporting shaft. 7. The method of claim 6 , wherein the applying the negative voltage to the carbon nanotube film is achieved by applying the negative voltage to the conductive supporting shaft. 8. The method of claim 1 , wherein an electric field is formed on each of the plurality of second carbon nanotubes after applying the negative voltage to the carbon nanotube film. 9. The method of claim 8 , wherein an electric field direction of the electric field points to each of the plurality of second carbon nanotubes and is perpendicular to an axial of each of the plurality of second carbon nanotubes. 10. The method of claim 1 , wherein the negative voltage is still applied to the carbon nanotube film during supplying the carrier gas and the carbon source gas to the reaction room. 11. The method of claim 10 , wherein the carbon source gas is cracked and graphitized to form a plurality of graphite sheets on each of the plurality of second carbon nanotubes. 12. The method of claim 11 , wherein an extending direction of each of the plurality of graphite sheets is perpendicular to an axial direction of each of the plurality of second carbon nanotubes. 13. The method of claim 11 , wherein the plurality of graphite sheets is joined with the plurality of second carbon nanotubes by a van der waals bond. 14. The method of claim 11 , wherein the plurality of graphite sheets is interval distribution on an outside wall of each of the plurality of second carbon nanotubes. 15. The method of claim 1 , wherein the carbon nanotube film is suspended during applying the negative voltage to the carbon nanotube film and passing the carbon nanotube film through the reaction room. 16. The method of claim 15 , wherein the carbon nanotube film has a first end and a second end opposite to the first end, the first end is connected to the carbon nanotube array, and the second end is held by a supporting shaft. 17. A method for making carbon fiber film, the method comprising: providing a plurality of carbon nanotube arrays; pulling out a carbon nanotube film from each of the plurality of carbon nanotube arrays to obtain a plurality of carbon nanotube films, and passing the plurality of carbon nanotube films through a reaction room; applying a negative voltage to each of the plurality of carbon nanotube films; and supplying a carrier gas and a carbon source gas into and heating the reaction room to form a graphite sheet on each of the plurality of carbon nanotube films. 18. A method for making carbon fiber film, the method comprising: placing a carbon nanotube film in a reaction room; applying a negative voltage to the carbon nanotube film; and supplying a carrier gas and a carbon source gas to the reaction room and heating the reaction room to form a plurality of graphite sheets on the carbon nanotube film.

Assignees

Inventors

Classifications

  • Pretreatment of the material to be coated (C23C16/04 takes precedence) · CPC title

  • Manufacture or treatment of nanostructures · CPC title

  • Carbon nanotubes, CNTs · CPC title

  • Other organic compounds · CPC title

  • for textile or fabric treatment · CPC title

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What does patent US10563325B2 cover?
A method for making carbon fiber film includes growing a carbon nanotube array on a surface of a growth substrate. A carbon nanotube film is pulled out from the carbon nanotube array, and pass through a reaction room. A negative voltage is applied to the carbon nanotube film. A carrier gas and a carbon source gas are supplied to the reaction room to form graphite sheets on the carbon nanotube f…
Who is the assignee on this patent?
Univ Tsinghua, Hon Han Prec Industry Co Ltd, Hon Hai Prec Ind Co Ltd
What technology area does this patent fall under?
Primary CPC classification D01F9/1272. Mapped technology areas include Textiles & Paper.
When was this patent published?
Publication date Tue Feb 18 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).