Solid-state imaging device with light shielding film and driving method thereof, and electronic apparatus

Patent metadata

Field	Value
Publication number	US-10559608-B2
Application number	US-201916243915-A
Country	US
Kind code	B2
Filing date	Jan 9, 2019
Priority date	Jul 5, 2013
Publication date	Feb 11, 2020
Grant date	Feb 11, 2020

Abstract

The present technology relates to a solid-state imaging device and a driving method thereof, and an electronic apparatus that make it possible to improve the precision of phase difference detection while suppressing deterioration of resolution in a solid-state imaging device having a global shutter function and a phase difference AF function. Provided is a solid-state imaging device including: a pixel array unit including, as pixels including an on-chip lens, a photoelectric conversion unit, and a charge accumulation unit, imaging pixels for generating a captured image and phase difference detection pixels for performing phase difference detection arrayed therein; and a driving control unit configured to control driving of the pixels. The imaging pixel is formed with the charge accumulation unit shielded from light. The phase difference detection pixel is formed in a manner that at least part of at least one of the photoelectric conversion unit and the charge accumulation unit refrains from being shielded from light. The present technology can be applied to, for example, a CMOS image sensor.

First claim

The invention claimed is:

1. An imaging device comprising:
a first imaging pixel including:
a first photoelectric conversion region;
a first charge accumulation region coupled to the first photoelectric conversion region via a first transfer transistor; and
a first floating diffusion coupled to the first charge accumulation region;

a first phase difference detection pixel including:
a second photoelectric conversion region;
a second charge accumulation region coupled to the second photoelectric conversion region via a second transfer transistor; and
a second floating diffusion coupled to the second charge accumulation region; and

a light shielding film including a first light shielding portion and a second light shielding portion,
wherein the first light shielding portion is disposed above a light receiving surface of the first charge accumulation region, and
wherein the second light shielding portion is disposed above a light receiving surface of the second charge accumulation region and at least a part of a light receiving surface of the second photoelectric conversion region.

2. The imaging device of claim 1 ,
wherein the second light shielding portion includes a first light shielding part and a second light shielding part,
wherein the first light shielding part is disposed above at least the part of the light receiving surface of the second photoelectric conversion region,
wherein the second light shielding part is disposed above the light receiving surface of the second charge accumulation region, and
wherein the first light shielding part is disposed in a first wiring layer and the second light shielding part is disposed in a second wiring layer different from the first wiring layer.

3. The imaging device of claim 1 , further comprising:
a first charge discharging transistor,
wherein charge photoelectrically converted at the first photoelectric conversion region is discharged via the first discharging transistor, and
wherein the light shielding film is contiguous for the first light shielding portion and the second light shielding portion.

4. The imaging device of claim 1 , wherein the imaging pixel further comprises:
a third transfer transistor coupled between the first charge accumulation region and the first floating diffusion; and
a reset transistor coupled to the third transfer transistor, wherein a transfer gate of the third transfer transistor and a reset gate of the reset transistor form an L-shape in a plan view.

5. An imaging device comprising:
a pixel array, including:
a first imaging pixel including:
a first photoelectric conversion region;
a first charge accumulation region coupled to the first photoelectric conversion region via a first transfer transistor;
a first floating diffusion region coupled to the first charge accumulation region;

a first phase difference detection pixel including:
a second photoelectric conversion region;
a second charge accumulation region coupled to the second photoelectric conversion region via a second transfer transistor; and
a second floating diffusion coupled to the second charge accumulation region;

a first light shielding portion; and
a second light shielding portion,
wherein the first light shielding portion is disposed above a light receiving surface of the first charge accumulation region, and
wherein the second light shielding portion is disposed above a light receiving surface of the second charge accumulation region and at least a part of a light receiving surface of the second photoelectric conversion region.

6. The imaging device of claim 5 ,
wherein the first phase difference detection pixel includes a transistor region,
wherein the transistor region includes a first selection transistor, a first amplifier transistor, and a first reset transistor,
wherein the second photoelectric conversion region and the second charge accumulation region are arranged in a first direction in which the first selection transistor, the first amplifier transistor, and the reset transistor are arranged.

7. The imaging device of claim 6 , further comprising:
a third light shielding portion,
wherein the pixel array further includes a second phase difference detection pixel including a third photoelectric conversion region and a third charge accumulation region,
wherein the third light shielding portion is disposed above a light receiving surface of the third charge accumulation region and at least a part of a light receiving surface of the third photoelectric conversion region,
wherein the second light shielding portion includes a first opening,
wherein a center of the first opening is shifted to a first side from a center of the second photoelectric conversion region in the first direction,
wherein the third light shielding portion includes a second opening, and
wherein a center of the second opening is shifted to a second side opposite to the first side from a center of the second photoelectric conversion region in the first direction.

8. The imaging device of claim 6 , further comprising:
a third light shielding portion and a fourth light shielding portion,

wherein the pixel array further includes:
a second phase difference detection pixel including a third photoelectric conversion region and a third charge accumulation region; and
a third phase difference detection pixel including a fourth photoelectric conversion region and a fourth charge accumulation region,
wherein the third light shielding portion is disposed above a light receiving surface of the third charge accumulation region and at least a part of a light receiving surface of the third photoelectric conversion region,
wherein the fourth light shielding portion is disposed above a light receiving surface of the fourth charge accumulation region and at least a part of a light receiving surface of the fourth photoelectric conversion region,
wherein the third light shielding portion includes a first opening,
wherein a center of the first opening is shifted to a first side from a center of the third photoelectric conversion region in a second direction perpendicular to the first direction,
wherein the fourth light shielding portion includes a second opening, and
wherein a center of the second opening is shifted to a second side opposite to the first side from a center of the third photoelectric conversion region in the second direction.

9. The imaging device of claim 5 ,
wherein the first imaging pixel further includes a first on-chip lens over the first photoelectric conversion region at a light receiving side of the first photoelectric conversion region, and
wherein a wiring layer is disposed between the first photoelectric conversion region and the first on-chip lens.

10. The imaging device of claim 5 ,
wherein the first phase difference detection pixel does not have a color filter.

11. The imaging device of claim 5 ,
wherein the first light shielding portion completely covers a light receiving surface of the first charge accumulation region.

12. An imaging device comprising:
a pixel array, including:
a first imaging pixel including a first photoelectric conversion region and a first charge accumulation region; and
a first phase difference detection pixel including a second photoelectric conversion region and a second charge accumulation region, and
a first light shielding portion;
a second light shielding portion,
wherein the first light shielding portion is disposed above a light receiving surface of the first charge accumulation region, and
wherein the second light shielding portion is disposed above a light receiving surface of the second charge accumulation

Assignees

• Sony Corp

Inventors

• Okuno Jun
• Yamashita Kazuyoshi

Classifications

• H04N25/704

  Pixels specially adapted for focusing, e.g. phase difference pixel sets · CPC title

• H04N25/134

  based on three different wavelength filter elements · CPC title

• H04N23/672

  based on the phase difference signals · CPC title

• H01L27/14627

  Electricity · mapped topic

• H01L27/14609

  Electricity · mapped topic