Power deposition control in inductively coupled plasma (ICP) reactors

US10553398B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10553398-B2
Application numberUS-201414463205-A
CountryUS
Kind codeB2
Filing dateAug 19, 2014
Priority dateSep 6, 2013
Publication dateFeb 4, 2020
Grant dateFeb 4, 2020

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Embodiments of inductively coupled plasma (ICP) reactors are provided herein. In some embodiments, a dielectric window for an inductively coupled plasma reactor includes: a body including a first side, a second side opposite the first side, an edge, and a center, wherein the dielectric window has a dielectric coefficient that varies spatially. In some embodiments, an apparatus for processing a substrate includes: a process chamber having a processing volume disposed beneath a lid of the process chamber; and one or more inductive coils disposed above the lid to inductively couple RF energy into and to form a plasma in the processing volume above a substrate support disposed within the processing volume; wherein the lid is a dielectric window comprising a first side and an opposing second side that faces the processing volume, and wherein the lid has a dielectric coefficient that spatially varies to provide a varied power coupling of RF energy from the one or more inductive coils to the processing volume.

First claim

Opening claim text (preview).

The invention claimed is: 1. A dielectric window for an inductively coupled plasma reactor having an outer coil and an inner coil disposed above the dielectric window to inductively couple RF energy into a processing volume disposed beneath the dielectric window, comprising: a body including a first side, a second side opposite the first side, an edge, and a center, wherein the dielectric window has a dielectric coefficient that varies spatially and the dielectric coefficient of the dielectric window is increased at a location beneath an area disposed between the outer coil and the inner coil but the dielectric coefficient of the dielectric window is not increased at locations beneath all areas enclosed by the inner coil, and wherein a channel that extends only partially into the body is formed in the first side proximate the center to facilitate coupling the dielectric window to other components, and wherein the channel includes an axial portion extending partially into the first side of the body from a first end to a second end and a radial portion extending from the second end of the axial portion. 2. The dielectric window of claim 1 , wherein the dielectric coefficient varies radially. 3. The dielectric window of claim 1 , further comprising: one or more protrusions extending from the second side of the body that vary the dielectric coefficient of the dielectric window. 4. The dielectric window of claim 1 , wherein the body is planar, and further comprising: a single, circular protrusion formed integrally with and extending from the second side of the body. 5. The dielectric window of claim 1 , further comprising: one or more recesses formed in the first side of the dielectric window, wherein one or more inserts are disposed in the one or more recesses. 6. The dielectric window of claim 1 , further comprising: an opening formed in the center of the body; and a nozzle disposed within the opening and having a plurality of gas distribution holes. 7. The dielectric window of claim 6 , wherein the gas distribution holes are flush with the second side of the dielectric window. 8. The dielectric window of claim 6 , wherein the gas distribution holes extend past the second side of the dielectric window. 9. The dielectric window of claim 6 , wherein the plurality of gas distribution holes are fluidly coupled to a corresponding plurality of vertical holes disposed in the nozzle. 10. The dielectric window of claim 1 , further comprising: a plurality of integral gas inlets extending through the body from the first side to the second side. 11. The dielectric window of claim 1 , wherein a thickness of the dielectric window tapers from a region near the center of the body toward the edge of the body. 12. The dielectric window of claim 1 , wherein the dielectric coefficient varies by provision of one or more protrusions disposed on the second side of the body and further comprising a plurality of gas inlets disposed in and through the body, wherein the plurality of gas inlets are disposed radially inward of the one or more protrusions. 13. The dielectric window of claim 1 , wherein a highest value of the dielectric coefficient is about 2 to about 3 times a lowest value of the dielectric coefficient. 14. An apparatus for processing a substrate, comprising: a process chamber having a processing volume disposed beneath a lid of the process chamber, wherein the lid is a dielectric window having a dielectric coefficient that varies spatially, a first side, and a second side opposite the first side and facing the processing volume, and wherein a channel that extends only partially into a body of the dielectric window is formed in the first side proximate the center to facilitate coupling of the dielectric window to other components, and wherein the channel includes an axial portion extending partially into the first side of the body from a first end to a second end and a radial portion extending from the second end of the axial portion; a substrate support disposed in the processing volume; and an outer coil and an inner coil disposed above the lid to inductively couple RF energy into the processing volume above the substrate support; wherein the dielectric coefficient of the dielectric window is increased at a location beneath an area disposed between the outer and inner coils but the dielectric coefficient of the dielectric window is not increased at locations beneath all areas enclosed by the inner coils. 15. The apparatus of claim 14 , wherein a highest value of the dielectric coefficient is about 2 to about 3 times a lowest value of the dielectric coefficient. 16. A dielectric window for an inductively coupled plasma reactor having an outer coil and an inner coil disposed above the dielectric window to inductively couple RF energy into a processing volume disposed beneath the dielectric window, comprising: a body including a first side, a second side opposite the first side, an edge, and a center, wherein the dielectric window has a dielectric coefficient that varies spatially and the dielectric coefficient of the dielectric window is increased at a location beneath an area disposed between the outer coil and the inner coil but the dielectric coefficient of the dielectric window is not increased at locations beneath all areas enclosed by the inner coil; and a plurality of gas distribution holes disposed through the body, wherein each gas distribution hole includes a vertical portion extending from the first side to a terminal point between the first and second sides of the body and an angled portion extending from the terminal point of the vertical portion to the second side, wherein the angled portion extends radially outward at an angle of about 45 degrees with respect to the body, wherein a channel that extends only partially into the body is formed in the first side proximate the center to facilitate coupling the dielectric window to other components, and wherein the channel includes an axial portion extending partially into the first side of the body from a first end to a second end and a radial portion extending from the second end of the axial portion. 17. The dielectric window of claim 16 , wherein the plurality of gas distribution holes and the plurality of vertical holes are formed in the body. 18. The dielectric window of claim 16 , further comprising: an opening formed in the center of the body; and a nozzle disposed within the opening, wherein the plurality of gas distribution holes and the plurality of vertical holes are formed in the nozzle. 19. The dielectric window of claim 16 , wherein the channel is formed in the first side to facilitate coupling to components of a process chamber in which the dielectric window is disposed. 20. The dielectric window of claim 16 , wherein the body is planar, and further comprising: a single, circular protrusion formed integrally with and extending from the second side of the body.

Assignees

Inventors

Classifications

  • Antennas, e.g. particular shapes of coils · CPC title

  • the radio frequency energy being inductively coupled to the plasma · CPC title

  • Windows · CPC title

  • Gas supply means · CPC title

  • Dielectric barrier discharge · CPC title

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What does patent US10553398B2 cover?
Embodiments of inductively coupled plasma (ICP) reactors are provided herein. In some embodiments, a dielectric window for an inductively coupled plasma reactor includes: a body including a first side, a second side opposite the first side, an edge, and a center, wherein the dielectric window has a dielectric coefficient that varies spatially. In some embodiments, an apparatus for processing a …
Who is the assignee on this patent?
Applied Materials Inc
What technology area does this patent fall under?
Primary CPC classification H01J37/32119. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Feb 04 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).