Overlay error measuring device and computer program
US-2015136976-A1 · May 21, 2015 · US
US10545018B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10545018-B2 |
| Application number | US-201415104574-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 17, 2014 |
| Priority date | Dec 27, 2013 |
| Publication date | Jan 28, 2020 |
| Grant date | Jan 28, 2020 |
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The purpose of the present invention is to provide a pattern measurement device which adequately evaluates a pattern formed by means of a patterning method for forming a pattern that is not in a photomask. In order to fulfil the purpose, the present invention suggests a pattern measurement device provided with a computation device for measuring the dimensions between patterns formed on a sample, wherein: the centroid of the pattern formed on the sample is extracted from data to be measured obtained by irradiating beams; a position alignment process is executed between the extracted centroid and measurement reference data in which a reference functioning as the measurement start point or measurement end point is set; and the dimensions between the measurement start point or the measurement end point of the measurement reference data, which was subjected to position alignment, and the edge or the centroid of the pattern contained in the data to be measured is measured.
Opening claim text (preview).
The invention claimed is: 1. A pattern measurement device comprising: a computation device that measures dimensions between patterns formed in a sample, by using data which is obtained by irradiating the sample with a beam, wherein the computation device specifies a center of a space between patterns formed in the sample, from data to be measured obtained by irradiation with the beam, sets measurement references, which are separate from the patterns, in a grid shape at a plurality of positions whose distances from the specified center correspond to edge positions of patterns determined by a design data with the specified center as a reference, and measures dimensions between the set measurement references and the edges extracted from data obtained by irradiation with the beam. 2. The pattern measurement device according to claim 1 , wherein a plurality of the measurement start points or the measurement end points is arranged at a predetermined interval. 3. The pattern measurement device according to claim 2 , wherein the plurality of the measurement start points or the measurement end points is separately arranged at an interval between patterns generated by a self-derivative assembly process, or at an interval between patterns generated by a multi-patterning method. 4. The pattern measurement device according to claim 1 , wherein a position-aligned reference position obtained by position alignment between the measurement reference data and the centroid is set in the measurement reference data, and the measurement start point or the measurement end point is set based on position alignment of the position-aligned reference position. 5. The pattern measurement device according to claim 4 , wherein the computation device executes the position alignment process by using a centroid position of a pattern generated by a self-derivative assembly process, as the position-aligned reference position. 6. The pattern measurement device according to claim 4 , wherein the computation device executes the position alignment process by using a centroid position of a space between patterns generated by a multi-patterning method, as the position-aligned reference position. 7. A non-transitory computer-readable medium storing a program which, when executed on a computer, causes the computer to measure dimensions between patterns formed in a sample, by using data which is obtained by irradiating the sample with a beam, wherein the program causes the computer to specify a center of a space between the patterns formed in the sample, from data to be measured obtained by irradiation with the beam, to set measurement references, which are separate from the patterns, in a grid shape at a plurality of positions whose distances from the specified center correspond to edge positions of patterns determined by a design data with the specified center as a reference, and to measure dimensions between the set measurement references and the edges extracted from data obtained by irradiation with the beam. 8. A pattern measurement device comprising: a computation device that measures dimensions between patterns formed in a sample, by using data which is obtained by irradiating the sample with a beam, wherein the computation device acquires pattern data formed by patterning with a contraction projection exposure device, specifies a center of a space between the patterns formed in the sample, sets measurement references, which are separate from the patterns, in a grid shape at a plurality of positions whose distances from the specified center correspond to edge positions of patterns determined by a design data with the specified center as a reference, and measures dimensions between the set measurement references and the edges extracted from data obtained by irradiation with the beam. 9. The pattern measurement device according to claim 8 , wherein the pattern data is guide pattern data used in the self-derivative assembly process. 10. The pattern measurement device according to claim 8 , wherein the pattern data is core pattern data applied to the multi-patterning method. 11. A non-transitory computer-readable medium storing a program which, when executed on a computer, causes the computer to measure dimensions between patterns formed in a sample, by using data which is obtained by irradiating the sample with a beam, wherein the program causes the computer to acquire pattern data formed by patterning with a contraction projection exposure device, specify a center of a space between the patterns formed in the sample, set measurement references, which are separate from the patterns, in a grid shape at a plurality of positions whose distances from the specified center correspond to edge positions of patterns determined by a design data with the specified center as a reference, and measures dimensions between the set measurement references and the edges extracted from data obtained by irradiation with the beam.
Processes for improving the resolution of the masks · CPC title
characterised by the processes involved to create the masks · CPC title
characterised by their behaviours during the lithography processes, e.g. soluble masks or redeposited masks · CPC title
Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title
with scanning beams {(H01J37/268, H01J37/292, H01J37/2955 take precedence)} · CPC title
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