Method of forming a silicon nitride film using Si—N containing precursors

Patent metadata

Field	Value
Publication number	US-10544506-B2
Application number	US-201615560635-A
Country	US
Kind code	B2
Filing date	Mar 30, 2016
Priority date	Mar 30, 2015
Publication date	Jan 28, 2020
Grant date	Jan 28, 2020

Abstract

Methods for forming a SiN-containing film are disclosed. The methods use film-forming compositions comprising Si—N containing precursors. Also disclosed are methods of synthesizing the same and methods of using the same for vapor deposition. In particular, a catalytic dehydrogenative coupling of carbosilanes with ammonia, amines and amidines produces the Si—N containing precursors.

First claim

What is claimed is:

1. A method for forming a SiN-containing film, the method comprising the steps of:
delivering into a reactor containing a substrate a vapor including a Si-containing film forming composition comprising a Si—N containing precursor having the formula H 3 Si(CH 2 ) n SiH 2 N(R)C(Me)=NR, RN═C(Me)N(R)SiH 2 (CH 2 ) n SiH 2 N(R)C(Me)=NR,

wherein each R and R′ may independently be H, a C 1 to C 6 alkyl group or a C 3 -C 20 aryl, heterocycle or cycloalkyl group and n=1 or 2; and
depositing at least part of the Si—N containing precursor onto the substrate to form the silicon-containing film on the substrate using a vapor deposition process.

2. The method of claim 1 , wherein the vapor deposition process is selected from the group consisting of low pressure chemical vapor deposition (LPCVD), sub-atmospheric chemical vapor deposition (SACVD), plasma enhanced chemical vapor deposition (PECVD), flowable chemical vapor deposition (Flowable CVD), atomic layer deposition (ALD), plasma enhanced atomic layer deposition (PEALD), ultraviolet (UV) assisted ALD, catalyzed ALD, spatial isolation ALD.

3. The method of claim 1 , further comprising the step of delivering into the reactor a reactant.

4. The method of claim 1 , wherein the substrate is selected from the group consisting of a silicon wafer, a glass substrate, and a plastic substrate.

5. The method of claim 1 , wherein the Si—N containing precursor is N(SiH 2 (CH 2 ) n SiH 3 ) 3 , having the formula:

6. The method of claim 1 , wherein the Si—N containing precursor is H 3 Si(CH 2 ) n SiH(NRR′) 2 , having the formula:

7. A process for forming a Si—N containing compound having the formula having the formula H 3 Si(CH 2 ) n SiH 2 N(R)C(Me)=NR, RN═C(Me)N(R)SiH 2 (CH 2 ) n SiH 2 N(R)C(Me)=NR,

wherein R and R′ may each independently be H, a C 1 to C 6 alkyl group, or a C 3 -C 20 aryl, heterocycle or cycloalkyl group; and n=1 or 2, the process comprising the steps of:
a) charging a catalyst into a reactor;
b) introducing a first reactant having a Si—(CH 2 ) n —Si backbone and a second reactant containing N into the reactor under inert atmosphere at a target temperature;
c) maintaining contact between the first reactant, second reactants, and catalyst at the target temperature for a time period;
d) evacuating a H 2 reaction product;
e) separating the Si—N containing compound produced from the first and second reactants and any reaction products by distillation.

8. The process of claim 7 , wherein the second reactant is selected from the group consisting of NH 3 , RNH 2 , R 2 NH, and an amidine, wherein R may each independently be H, a C 1 to C 6 alkyl group, or a C 3 -C 20 aryl, heterocycle or cycloalkyl group.

9. The process of claim 7 , wherein the catalyst is a metal supported on carbon.

10. The process of claim 7 , wherein the Si—N containing compound is NH(SiH 2 (CH 2 ) n SiH 3 ) 2 , having the formula:

11. The process of claim 7 , wherein the Si—N containing compound is N(SiH 2 (CH 2 ) n SiH 3 ) 3 , having the formula:

12. The process of claim 7 , wherein the Si—N containing compound is H 3 Si(CH 2 ) n SiH(NRR′) 2 , having the formula:

Assignees

• Air Liquide Advanced Mat Llc
• Air Liquide

Inventors

• Kerrigan Sean
• Sanchez Antonio

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/6689

  the compound being a silazane · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• C23C16/50

  using electric discharges {(generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34)} · CPC title