Methods for providing patterned orientation templates for self-assemblable polymers for use in device lithography

Patent metadata

Field	Value
Publication number	US-10538859-B2
Application number	US-201113994426-A
Country	US
Kind code	B2
Filing date	Dec 9, 2011
Priority date	Dec 23, 2010
Publication date	Jan 21, 2020
Grant date	Jan 21, 2020

Abstract

A method is disclosed involving depositing a neutral orientation template layer onto a substrate after formation of chemical epitaxy or graphoepitaxy features on the substrate, but before deposition and orientation of a self-assemblable polymer. The orientation layer is arranged to bond with the substrate but not with certain features, so that it may be easily removed by vacuum or rinsing with organic solvent. The neutral orientation layer has a chemical affinity to match that of blocks in the self-assemblable polymer so that blocks of differing types wet the neutral orientation layer so that domains in the self-assembled polymer may lie side by side along the substrate surface, with interfaces normal to the substrate surface. The resulting aligned and oriented self-assembled polymer may itself be used as a resist for device lithography of the substrate.

First claim

The invention claimed is:

1. A method of forming a patterned neutral orientation layer, as a template for orientation of a self-assemblable polymer having different blocks, on a substrate, the method comprising:
applying a material to a surface of the substrate to form a neutral orientation layer, the surface having resist features thereon, so that the neutral orientation layer is bonded onto the surface between the resist features to provide the patterned neutral orientation layer, the neutral orientation layer having a similar chemical affinity for different blocks of the self-assemblable polymer and the material to form the neutral orientation layer comprising an organic compound having a head group reactive with the surface between the resist features,
wherein the material to form the neutral orientation layer is arranged to be unbonded to the resist features and such unbonded material is removed off the substrate by application of a vacuum or by rinsing with an organic solvent.

2. The method of claim 1 , wherein the resist features remain in place on the surface as part of the template for orientation of the self-assemblable polymer.

3. The method of claim 1 , wherein the resist features are exposed to actinic radiation following application of the neutral orientation layer so that the resist features are rendered chemically modified.

4. The method of claim 1 , wherein the material to form the neutral orientation layer is applied by vapor deposition.

5. The method of claim 1 , wherein the resist features are removed following formation of the neutral orientation layer so that a complementary pattern free from neutral orientation layer is formed where the resist features have been removed.

6. The method of claim 5 , wherein the resist features are removed by dissolution in an organic solvent.

7. The method of claim 5 , wherein the resist features are laterally trimmed prior to application of the neutral orientation layer so that a dimension of features of the complementary pattern is correspondingly reduced in lateral extent.

8. The method of claim 5 , wherein a selective orientation layer is applied to the surface prior to application of the resist features to the surface, the selective orientation layer having a chemical affinity for the self-assemblable polymer differing from that of the neutral orientation layer.

9. The method of claim 8 , wherein the selective orientation layer is removed from the surface between the resist features prior to formation of the neutral orientation layer.

10. The method of claim 1 , wherein the head group comprises a silane head group.

11. The method of claim 1 , wherein the organic compound comprises 3-(p-methoxyphenyl)propyl trichlorosilane.

12. The method of claim 1 , wherein such unbonded material is removed from the resist features, without substantially removing the resist features from the surface.

13. A method of forming a self-assembled polymer layer on a surface of a substrate, the method comprising:
providing a surface of a substrate, having a patterned neutral orientation layer thereon, by the method of claim 1 ;
depositing a self-assemblable polymer layer directly onto the neutral orientation layer to provide an interface between the self-assemblable polymer layer and the neutral orientation layer; and
treating the self-assemblable polymer layer to provide self-assembly into an ordered polymer layer at the interface.

14. The method of claim 13 , wherein the self-assemblable polymer comprises first and second domain types and wherein the neutral orientation layer has chemical compatibility with both first and second domain types so that both first and second domain types are present at the interface.

15. A lithography method for patterning a surface of a substrate by resist etching, wherein the method comprises providing an ordered polymer layer at the surface by the method of claim 13 , wherein the ordered polymer layer is used as a resist layer.

16. A method for forming a device topography at a surface of a substrate, the method comprising using the self-assembled polymer layer formed by the method of claim 13 as a resist layer while etching the substrate to provide the device topography.

Assignees

• Peeters Emiel
• Ketelaars Wilhelmus Sebastianus Marcus Maria
• Dijksman Johan Frederik
• Wuister Sander Frederik
• Koole Roelof
• Van Heesch Christianus Martinus
• Asml Netherlands Bv

Inventors

• Peeters Emiel
• Ketelaars Wilhelmus Sebastianus Marcus Maria
• Dijksman Johan Frederik
• Wuister Sander Frederik
• Koole Roelof
• Van Heesch Christianus Martinus

Classifications

• G03F7/0002

  Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title

• C30B19/12 Primary

  characterised by the substrate · CPC title

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title

• B82Y10/00 Primary

  Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic · CPC title