Via structure, MRAM device using the via structure and method for fabricating the MRAM device

Patent metadata

Field	Value
Publication number	US-10535816-B2
Application number	US-201816059777-A
Country	US
Kind code	B2
Filing date	Aug 9, 2018
Priority date	Nov 22, 2017
Publication date	Jan 14, 2020
Grant date	Jan 14, 2020

Abstract

A via structure, a MRAM device using the via structure and a method for fabricating the MRAM device are provided. In the method for fabricating the MRAM device, at first, a first dielectric layer is deposited over a transistor. Then, a contact is formed in the first dielectric layer and electrically connected to the transistor. Thereafter, a metal nitride layer is deposited over the first dielectric layer and the contact. Then, an etch stop layer is deposited over the metal nitride layer. Thereafter, a second dielectric layer is deposited over the etch stop layer. Then, a via structure is formed in the second dielectric layer, the etch stop layer, and the metal nitride layer and landing on the contact. Thereafter, a memory stack is formed over the via structure.

First claim

What is claimed is:

1. A method, comprising:
depositing a first dielectric layer over a transistor;
forming a contact in the first dielectric layer and electrically connected to the transistor;
depositing a metal nitride layer over the first dielectric layer and the contact;
depositing an etch stop layer over the metal nitride layer, wherein a thickness of the metal nitride layer is smaller than or equal to a thickness of the etch stop layer;
depositing a second dielectric layer over the etch stop layer;
forming a via structure in the second dielectric layer, the etch stop layer, and the metal nitride layer and landing on the contact; and
forming a memory stack over the via structure.

2. The method of claim 1 , wherein forming the via structure comprises:
etching the second dielectric layer to form a first through hole, wherein etching the second dielectric layer stops at the etch stop layer;
etching the etch stop layer and the metal nitride layer to form a second through hole to expose the contact; and
forming a conductor in the second through hole.

3. The method of claim 2 , wherein etching the etch stop layer and the metal nitride layer comprises a wet etching operation.

4. The method of claim 1 , wherein depositing the metal nitride layer comprises:
soaking top surfaces of the first dielectric layer and the contact in NH3;
treating top surfaces of the first dielectric layer and the contact with a precursor comprising Al; and
conducting a dehydrogenation operation to form the metal nitride layer over the top surfaces of the first dielectric layer and the contact.

5. The method of claim 1 , wherein depositing the metal nitride layer and depositing the etch stop layer are performed such that a thickness of a combination of the metal nitride layer and the etch stop layer is greater than or equal to about 10 angstrom and smaller than or equal to about 1100 angstrom.

6. The method of claim 1 , further comprising:
depositing an anti-reflection layer over the second dielectric layer prior to forming the via structure.

7. The method of claim 1 , wherein depositing the metal nitride layer over the first dielectric layer and the contact comprises:
forming a plurality of amine groups on the contact and the first dielectric layer; and
replacing a plurality of hydrogen atoms in the amine groups with a metal containing precursor to form the etch stop layer.

8. A method, comprising:
forming a contact in a first dielectric layer;
forming a plurality of amine groups on the contact and the first dielectric layer;
replacing a plurality of hydrogen atoms in the amine groups with a metal containing precursor to form an etch stop layer over the contact and the first dielectric layer;
etching a portion of the etch stop layer to form a through hole; and
filling the through hole with a conductive material landing on the contact.

9. The method of claim 8 , wherein forming the amine groups on the contact and the first dielectric layer is performed by soaking the contact and the first dielectric layer in NH3.

10. The method of claim 8 , wherein replacing the hydrogen atoms in the amine groups with the metal containing precursor is performed by introducing a metal containing gas to the contact and the first dielectric layer.

11. The method of claim 8 , wherein the metal containing precursor comprises AlN(CH 3 ) 2 that is of gas and used as a source of the etch stop layer.

12. The method of claim 8 , wherein the etch stop layer comprising metal nitride.

13. The method of claim 8 , further comprising:
after replacing the hydrogen atoms in the amine groups, introducing amine groups to the contact and the first dielectric layer.

14. The method of claim 8 , further comprising:
forming a metal oxide layer over the etch stop layer prior to etching the portion of the etch stop layer.

15. The method of claim 14 , wherein the metal oxide layer comprises a metal substantially the same as a metal of the etch stop layer.

16. A method, comprising:
forming a contact in a first dielectric layer;
soaking the contact and the first dielectric layer in ammonia;
introducing a metal containing precursor to the contact and the first dielectric layer to form a metal nitride layer, wherein an atomic percentage content of the metal in the metal nitride layer is greater than that of a nitride in the metal nitride layer;
etching a portion of the metal nitride layer to form a through hole; and
filling the through hole with a conductive material landing on the contact.

17. The method of claim 16 , wherein soaking the contact and the first dielectric layer in the ammonia is performed such that a plurality of amine groups are formed on a top surface of the contact and a top surface of the first dielectric layer.

18. The method of claim 16 , wherein etching the portion of the metal nitride layer is performed by a wet etching process.

19. The method of claim 16 , wherein the metal nitride layer comprises aluminum nitride, tantalum nitride, titanium nitride, or combinations thereof.

20. The method of claim 16 , wherein the metal containing precursor comprises AlN(CH 3 ) 2 that is of gas and used as a source of the etch stop layer.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Wu Jung-Tang
• Tung Szu-Ping
• Wu Szu-Hua
• Pan Shing-Chyang
• Wu Meng-Yu

Classifications

• H01L43/12 Primary

  Electricity · mapped topic

• H01L27/228

  Electricity · mapped topic

• H01L43/02

  Electricity · mapped topic

• H10N50/01 Primary

  Manufacture or treatment · CPC title

• H10B61/22 Primary

  of the field-effect transistor [FET] type · CPC title