Methods of making semiconductor X-Ray detector

Patent metadata

Field	Value
Publication number	US-10535703-B2
Application number	US-201816185370-A
Country	US
Kind code	B2
Filing date	Nov 9, 2018
Priority date	Jan 23, 2017
Publication date	Jan 14, 2020
Grant date	Jan 14, 2020

Abstract

Disclosed herein is an image sensor and a method of making the image sensor. The image sensor may comprise one or more packages of semiconductor radiation detectors. Each of the one or more packages may comprise a radiation detector that comprises a radiation absorption layer on a first strip of semiconductor wafer and an electronics layer on a second strip of semiconductor wafer. The radiation absorption layer may be continuous along the first strip of semiconductor wafer with no coverage gap. The first strip and the second strip may be longitudinally aligned and bonded together. The radiation detector may be mounted on a printed circuit board (PCB) and electrically connected to the PCB close to an edge of the radiation detector.

First claim

What is claimed is:

1. An image sensor comprising:
one or more packages of semiconductor radiation detectors;
wherein each of the one or more packages comprises a radiation detector,
wherein the radiation detector comprises a radiation absorption layer on a first strip of semiconductor wafer and an electronics layer on a second strip of semiconductor wafer,
wherein the radiation absorption layer is continuous along the first strip of semiconductor wafer with no coverage gap,
wherein the first strip and the second strip are longitudinally aligned and bonded together;
wherein at least one of the one or more packages comprises a plurality of radiation detectors mounted on a printed circuit board (PCB), wherein each of the plurality of radiation detectors is tilted relative to the PCB and electrically connected to the PCB.

2. The image sensor of claim 1 , wherein at least one of the plurality of radiation detectors partially overlap with another one of the plurality of radiation detectors.

3. The image sensor of claim 1 , wherein the plurality of radiation detectors are arranged such that light incident in an area of the at least one package is detectable by at least one of the radiation detector.

4. The image sensor of claim 1 , wherein the plurality of radiation detectors are arranged such that light incident in an area of the at least one package is detectable by at least two of the radiation detectors.

5. The image sensor of claim 1 , wherein the electronics layer comprises transmission lines at a first surface of the second strip of semiconductor wafer bonded to the first strip of semiconductor wafer.

6. The image sensor of claim 5 , wherein the electronics layer comprises vias electrically connected to the transmission lines.

7. The image sensor of claim 6 , wherein the second strip of semiconductor wafer comprise a redistribution layer (RDL) electrically connected to the vias.

8. The image sensor of claim 5 , wherein the radiation absorption layer comprises electrical connections electrically connected to the electrical contacts of the electronics layer.

9. The image sensor of claim 8 , wherein the electrical connections comprise doped regions in the first strip of semiconductor wafer.

10. The image sensor of claim 1 , wherein the one or more packages comprise a first group of radiation detectors bonded and electrically connected to a first PCB and a second group of the radiation detectors bonded and electrically connected to a second PCB, wherein the first PCB and the second PCB are bonded and electrically connected to a system PCB.

11. The image sensor of claim 10 , wherein the first group of radiation detectors at least partially overlap with the second group of radiation detectors.

12. The image sensor of claim 1 , wherein the radiation absorption layer is configured to detect one of electromagnetic radiation including ultraviolet (UV), X-ray, gamma ray.

13. The image sensor of claim 1 , wherein the radiation absorption layer is configured to detect one of particle radiation including alpha particles, beta particles and neutron particles.

14. The image sensor of claim 1 , wherein the radiation absorption layer comprises an electrode and the electronics layer comprises an electronics system, the electronics system comprises:
a first voltage comparator configured to compare a voltage of the electrode to a first threshold;
a second voltage comparator configured to compare the voltage to a second threshold;
a counter configured to register a number of radiation photons or particles reaching the radiation absorption layer;
a controller;
wherein the controller is configured to start a time delay from a time at which the first voltage comparator determines that an absolute value of the voltage equals or exceeds an absolute value of the first threshold;
wherein the controller is configured to activate the second voltage comparator during the time delay;
wherein the controller is configured to cause the number registered by the counter to increase by one, if the second voltage comparator determines that an absolute value of the voltage equals or exceeds an absolute value of the second threshold.

15. The image sensor of claim 14 , wherein the electronics system further comprises a capacitor module electrically connected to the electrode, wherein the capacitor module is configured to collect charge carriers from the electrode.

16. The image sensor of claim 14 , wherein the controller is configured to activate the second voltage comparator at a beginning or expiration of the time delay.

17. The image sensor of claim 14 , wherein the electronics system further comprises a voltmeter, wherein the controller is configured to cause the voltmeter to measure the voltage upon expiration of the time delay.

18. The image sensor of claim 14 , wherein the controller is configured to determine an X-ray photon energy based on a value of the voltage measured upon expiration of the time delay.

19. The image sensor of claim 14 , wherein the controller is configured to connect the electrode to an electrical ground.

20. The image sensor of claim 14 , wherein a rate of change of the voltage is substantially zero at expiration of the time delay.

21. The image sensor of claim 14 , wherein a rate of change of the voltage is substantially non-zero at expiration of the time delay.

22. A system comprising the image sensor of claim 1 and an X-ray source, wherein the system is configured to perform X-ray radiography on human chest or abdomen.

23. A system comprising the image sensor of claim 1 and an X-ray source, wherein the system is configured to perform X-ray radiography on human mouth.

24. A cargo scanning or non-intrusive inspection (NII) system, comprising the image sensor of claim 1 and an X-ray source, wherein the cargo scanning or non-intrusive inspection (NII) system is configured to form an image using backscattered X-ray.

25. A cargo scanning or non-intrusive inspection (NII) system, comprising the image sensor of claim 1 and an X-ray source, wherein the cargo scanning or non-intrusive inspection (NII) system is configured to form an image using X-ray transmitted through an object inspected.

26. A full-body scanner system comprising the image sensor of claim 1 and an X-ray source.

27. An X-ray computed tomography (X-ray CT) system comprising the image sensor of claim 1 and an X-ray source.

28. An electron microscope comprising the image sensor of claim 1 , an electron source and an electronic optical system.

29. A system comprising the image sensor of claim 1 , wherein the system is an X-ray telescope, or an X-ray microscopy, or wherein the system is configured to perform mammography, industrial defect detection, microradiography, casting inspection, weld inspection, or digital subtraction angiography.

30. A method of making an image sensor comprising one or more packages of semiconductor radiation detectors;
wherein each of the one or more packages comprises a radiation detector,
wherein the radiation detector comprises a radiation absorption layer on a first strip of semiconductor wafer and an electronics layer on a second strip of semiconductor wafer,
wherein the radiation absorption layer is continuous along the first strip of semiconductor wafer with no coverage gap,
wherein the first strip and the second strip a

Assignees

• Shenzhen Xpectvision Tech Co Ltd

Inventors

• Cao Peiyan
• Song Chongshen
• Liu Yurun

Classifications

• G01T1/244

  Auxiliary details, e.g. casings, cooling, damping or insulation against damage by, e.g. heat, pressure or the like · CPC title

• G01T1/24

  with semiconductor detectors · CPC title

• G01T1/246

  utilizing latent read-out, e.g. charge stored and read-out later · CPC title

• G01T1/2964

  Scanners (using scintigraphy G01T1/166) · CPC title

• G01T1/17

  Circuit arrangements not adapted to a particular type of detector {(pulse-selection circuits H03K, G01R)} · CPC title