Apparatus and methods for backside passivation

Patent metadata

Field	Value
Publication number	US-10535513-B2
Application number	US-201816008500-A
Country	US
Kind code	B2
Filing date	Jun 14, 2018
Priority date	Nov 26, 2012
Publication date	Jan 14, 2020
Grant date	Jan 14, 2020

Abstract

Provided apparatus and methods for back side passivation of a substrate. The systems comprise an elongate support with an open top surface forming a support ring so that when a substrate is on the support ring, a cavity is formed within the elongate support. A plasma generator is coupled to the cavity to generate a plasma within the cavity to deposit a passivation film on the back side of the substrate.

First claim

What is claimed is:

1. A processing method comprising:
placing a substrate in a chamber on an elongate substrate support, the substrate having a front side to be processed and a back side, the elongate substrate support having a cylindrical body with an open tope surface with a support ring to hold the substrate by an edge region, the cylindrical body defining a cavity within the elongate substrate support;
passivating the back side of the substrate in the chamber;
processing the front side of the substrate, wherein processing comprises heating the substrate; and
moving the substrate closer to and further from the substrate support using a plurality of lift pins, the lift pins passing downward through openings in the top surface of the substrate support and curing in toward a center of the cavity to form support ends inside the cavity below the top surface of the substrate support.

2. The method of claim 1 , wherein passivating the back side of the substrate comprises depositing a passivating film on the back side of the substrate by exposing the back side of the substrate to one or more of a reactive gas or a plasma.

3. The method of claim 2 , wherein the film comprising one or more of a nitride or an oxide layer.

4. The method of claim 3 , wherein the film has a thickness greater than about 15 Å.

5. The method of claim 2 , wherein the chamber is a load-lock chamber and the substrate is moved to a second chamber after passivating the back side and before processing the front side.

6. The method of claim 2 , wherein passivating the back side of the substrate and processing the front side of the substrate occurs in a single chamber.

7. The method of claim 2 , wherein the chamber is an intermediate region between a load lock chamber and a processing chamber that processes the front side of the substrate.

8. The method of claim 2 , further comprising removing the passivating film from the back side of the substrate.

9. The method of claim 2 , wherein the plasma generator is located remotely from the cavity and the plasma is flowed into the cavity.

10. The method of claim 1 , wherein passivating the substrate comprises exposing the substrate to a plasma source spaced a distance in the range of about 0.25 inches to about 2.5 inches from the substrate, the distance being large enough to prevent direct coupling between the substrate and the plasma source.

11. The method of claim 10 , wherein the plasma source creates an inductively coupled RF plasma in the cavity.

12. The method of claim 1 , wherein the substrate is held on the support ring substantially only by gravity.

13. A processing method comprising:
placing a substrate in a chamber on an elongate substrate support, the substrate having a front side to be processed and a back side, the elongate substrate support having a cylindrical body with an open tope surface with a support ring to hold the substrate by an edge region, the cylindrical body defining a cavity within the elongate substrate support, the substrate moved closer to the substrate support using a plurality of lift pins, the lift pins passing downward through openings in the top surface of the substrate support and curving in toward a center of the cavity to form support ends inside the cavity below the top surface of the substrate support;
passivating the back side of the substrate in the chamber by exposing the back side of the substrate to plasma to form a film comprising one or more of a nitride or an oxide layer; and
processing the front side of the substrate, wherein processing comprises heating the substrate.

14. The method of claim 13 , wherein the film has a thickness greater than about 15 Å.

15. The method of claim 13 , wherein the chamber is a load-lock chamber and the substrate is moved to a second chamber after passivating the back side and before processing the front side.

16. The method of claim 13 , wherein passivating the back side of the substrate and processing the front side of the substrate occurs in a single chamber.

17. The method of claim 13 , wherein the chamber is an intermediate region between a load lock chamber and a processing chamber that processes the front side of the substrate.

18. The method of claim 13 , further comprising removing the passivating film from the back side of the substrate.

19. The method of claim 13 , wherein the plasma is generated by a plasma source spaced a distance in the range of about 0.25 inches to about 2.5 inches from the substrate, the distance being large enough to prevent direct coupling between the substrate and the plasma source.

Assignees

• Applied Materials Inc

Inventors

• Hawrylchak Lara
• Tobin Jeffrey

Classifications

• H10P72/0462

  characterised by the construction of the processing chambers, e.g. modular processing chambers · CPC title

• H10P14/6316

  Formation by nitridation, e.g. nitridation of the substrate · CPC title

• H10P14/6309 Primary

  of silicon in uncombined form, i.e. pure silicon · CPC title

• H10P14/6319 Primary

  Formation by plasma treatments, e.g. plasma oxidation of the substrate · CPC title

• H01L21/02247

  Electricity · mapped topic