Resist composition and resist pattern forming method

US10534264B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10534264-B2
Application numberUS-201815879206-A
CountryUS
Kind codeB2
Filing dateJan 24, 2018
Priority dateFeb 3, 2017
Publication dateJan 14, 2020
Grant dateJan 14, 2020

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A resist composition which generates an acid through exposure and whose solubility in a developer changes by the action of an acid. The resist composition contains a polymer compound having at least two kinds of specific constituent units. A resist pattern forming method, including forming a resist film on a support using the resist composition, subjecting the resist film to exposure, and forming a resist pattern through patterning by developing the resist film having undergone exposure by using a developer.

First claim

Opening claim text (preview).

What is claimed is: 1. A resist composition comprising: a component (A) whose solubility in a developer changes by the action of an acid; and an acid generator component (B) generating an acid through exposure, wherein the component (A) contains a polymer compound having a constituent unit (a1) represented by Formula (1) and a constituent unit (a2) represented by Formula (2), wherein R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; Z represents a single bond or an alkylene group; and C p represents a group represented by Formula (Cp-1), wherein R 2 represents a tertiary alkyl group, n p represents a positive integer, and * represents a binding position in which (Cp-1) is bonded to Z, wherein R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; Y represents a divalent linking group; and X represents a group represented by a formula selected from the group consisting of Formulae (a2-r-1) to (a2-r-7), (a5-r-1), and (a5-r-2), wherein Ra′ 21 and Ra′ 51 each independently represent a hydrogen atom, a cyano group, or a halogen atom; A′ represents an alkylene group having 1 to 5 carbon atoms that may contain an oxygen atom or a sulfur atom, an oxygen atom, or a sulfur atom; n′ represents an integer of 0 to 2; and m′ represents an integer of 0 or 1. 2. The resist composition according to claim 1 , wherein in Formula (1), n p represents an integer of 1 to 3, and R 2 represents an a tertiary alkyl group having 4 to 10 carbon atoms. 3. The resist composition according to claim 1 , wherein the constituent unit (a2) is a constituent unit represented by Formula (2-1) or Formula (2-2), wherein R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; X represents a group represented by a formula selected from the group consisting of Formulae (a2-r-1) to (a2-r-7), (a5-r-1), and (a5-r-2), V and W each represent a divalent linking group; and n represents an integer of 1 to 5. 4. The resist composition according to claim 1 , wherein in Formulae (2), X represents a group represented by the formula selected from the group consisting of Formulae (a2-r-1), (a2-r-2), (a2-r-6), (a2-r-7), and (a5-r-1). 5. The resist composition according to claim 3 , wherein in Formula (2-1) or (2-2), X represents a group represented by the formula selected from the group consisting of Formulae (a2-r-1), (a2-r-2), (a2-r-6), (a2-r-7), and (a5-r-1). 6. A resist pattern forming method, comprising: forming a resist film on a support using the resist composition according to claim 1 ; subjecting the resist film to exposure; and forming a resist pattern by developing the resist film.

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Classifications

  • and containing two or more oxygen atoms · CPC title

  • with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors · CPC title

  • having condensed rings (coumarone-indene polymers C08F244/00) · CPC title

  • Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a heterocyclic ring containing oxygen (cyclic esters of polyfunctional acids C08F218/00; cyclic anhydrides of unsaturated acids C08F220/00, C08F222/00) · CPC title

  • Treatment before imagewise removal, e.g. prebaking {(G03F7/265 takes precedence)} · CPC title

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What does patent US10534264B2 cover?
A resist composition which generates an acid through exposure and whose solubility in a developer changes by the action of an acid. The resist composition contains a polymer compound having at least two kinds of specific constituent units. A resist pattern forming method, including forming a resist film on a support using the resist composition, subjecting the resist film to exposure, and formi…
Who is the assignee on this patent?
Tokyo Ohka Kogyo Co Ltd
What technology area does this patent fall under?
Primary CPC classification G03F7/0397. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Jan 14 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).