Semiconductor light emitting device

Patent metadata

Field	Value
Publication number	US-10522716-B2
Application number	US-201815917445-A
Country	US
Kind code	B2
Filing date	Mar 9, 2018
Priority date	Mar 9, 2017
Publication date	Dec 31, 2019
Grant date	Dec 31, 2019

Abstract

Described herein is a semiconductor light emitting device. The semiconductor light emitting device comprises: an n-type semiconductor layer; a V-pit formed through at least part of the n-type semiconductor layer; an active layer disposed on the n-type semiconductor layer and filling the V-pit; and a p-type semiconductor layer disposed on the active layer, wherein the active layer includes a plurality of layers and part of the plural layers has a flat shape on the V-pit.

First claim

We claim:

1. A semiconductor light emitting device comprising:
an n-type semiconductor layer;
a V-pit formed through at least part of the n-type semiconductor layer;
an active layer disposed on the n-type semiconductor layer and having a first, second, third active layers that are formed over one another, wherein parts of the first active layer and the second active layer fill the V-pit and the third active layer has a region located over the V-pit and another region located over remaining parts of the first active layer and the second active layer; and
a p-type semiconductor layer disposed on the active layer,
wherein the first active layer includes barrier layers and well layers that converge toward a point on the n-type semiconductor layer that is a starting point for the V-pit, and
wherein the region and another region of the third active layer form a continuous flat top surface that is opposite to a bottom surface of the third active layer facing the second active layer.

2. The semiconductor light emitting device according to claim 1 , wherein the first portion is located under the second portion and the first portion is configured to increase a size of the V-pit.

3. The semiconductor light emitting device according to claim 1 , wherein an uppermost end of the V-pit has a diameter of 100 nm or more.

4. The semiconductor light emitting device according to claim 1 , wherein the second active layer is located to completely fill the V-pit.

5. The semiconductor light emitting device according to claim 1 , wherein the second active layer comprises hydrogen molecules (H2).

6. The semiconductor light emitting device according to claim 1 , wherein the barrier layers and the well layers are alternately stacked one above another.

7. The semiconductor light emitting device according to claim 6 , wherein the barrier layers comprise a GaN layer and the well layers comprise an InGaN layer.

8. The semiconductor light emitting device according to claim 1 , further comprising:
a substrate having a different crystal structure than the n-type semiconductor layer.

9. The semiconductor light emitting device according to claim 8 , wherein the n-type semiconductor layer comprises:
a first n-type semiconductor layer disposed on the substrate and comprising a dislocation caused by a difference in crystal structure between the substrate and the n-type semiconductor layer; and
a second n-type semiconductor layer disposed on the first n-type semiconductor layer,
wherein the first n-type semiconductor layer has less defect density than the second n-type semiconductor layer.

10. The semiconductor light emitting device according to claim 9 , wherein the V-pit is formed from the second n-type semiconductor layer corresponding to a location of the dislocation of the first n-type semiconductor layer.

11. The semiconductor light emitting device according to claim 1 , further comprising:
a super-lattice layer interposed between the n-type semiconductor layer and the active layer.

12. The semiconductor light emitting device according to claim 11 , wherein the super-lattice layer is configured to increase a size of the V-pit.

13. The semiconductor light emitting device according to claim 1 , further comprising:
an electron blocking layer interposed between the active layer and the p-type semiconductor layer.

14. A semiconductor light emitting device comprising:
a substrate;
an n-type semiconductor layer formed over the substrate and having a non-flat portion for forming a pit;
an active layer formed over the n-type semiconductor layer and having a first, a second, and third active layers that are disposed over one another, each of the first and second active layers includes barrier layers and well layers extending in the pit; and
a p-type semiconductor layer formed over the active layer,
wherein the first active layer includes barrier layers and well layers that converge toward a point on the n-type semiconductor layer, and wherein the third active layer has continuous flat well layers.

15. The semiconductor light emitting device of claim 14 , wherein the surface of the third active layer has a flat shape.

16. The semiconductor light emitting device of claim 14 , wherein the n-type semiconductor layer includes a first n-type semiconductor layer and a second n-type semiconductor layer having a higher defect density than the first n-type semiconductor layer.

17. The semiconductor light emitting device of claim 14 , wherein the active layer includes multiple layers, each layer having a barrier layer and a quantum well layer.

18. The semiconductor light emitting device of claim 14 , wherein the pit has size depending on the n-type semiconductor layer and the active layer.

Assignees

• Seoul Viosys Co Ltd

Inventors

• Park Seung Chul
• Gwak Woo Chul
• Yun Jun Ho

Classifications

• H01L33/24 Primary

  Electricity · mapped topic

• H01L33/22

  Electricity · mapped topic

• H01L33/025

  Electricity · mapped topic

• H01L33/12

  Electricity · mapped topic

• H01L33/14

  Electricity · mapped topic