Leveler compositions for use in copper deposition in manufacture of microelectronics

Patent metadata

Field	Value
Publication number	US-10519557-B2
Application number	US-201715412809-A
Country	US
Kind code	B2
Filing date	Jan 23, 2017
Priority date	Feb 12, 2016
Publication date	Dec 31, 2019
Grant date	Dec 31, 2019

Abstract

An aqueous electrolytic composition and a process for electrodeposition of copper on a dielectric or semiconductor base structure using the aqueous electrolytic composition. The process includes (i) contacting a metalizing substrate comprising a seminal conductive layer on the base structure with an aqueous electrolytic deposition composition; and (ii) supplying electrical current to the electrolytic deposition composition to deposit copper on the substrate. The aqueous electrolytic composition comprises: (a) copper ions; (b) an acid; (c) a suppressor; and (d) a quaternized poly(epihalohydrin) comprising n repeating units corresponding to structure 1N and p repeating units corresponding to structure 1P:

First claim

What is claimed is:

1. A process for electrodeposition of copper on a dielectric or semiconductor base structure, the method comprising:
contacting a metalizing substrate comprising a seminal conductive layer on the base structure with an aqueous electrolytic deposition composition; and
supplying electrical current to the electrolytic deposition composition to deposit copper on the substrate;
wherein the aqueous electrolytic composition comprises: copper ions; an acid; a suppressor; and a quaternized poly(epihalohydrin) comprising n repeating units corresponding to structure 1N and p repeating units corresponding to structure 1P:

wherein Q has a structure corresponding to a substituted or unsubstituted nitrogen-containing heteroaryl compound; n is an integer between 3 and 35, p is an integer between 0 and 25; and wherein n/(n+p)<1; X is a halo substituent; and X− is a monovalent anion, and wherein Q is

wherein structure IIC is a heterocyclic moiety and each of R 5 , R 6 , R 7 , R 8 and R 9 is independently selected from the group consisting of hydrogen, substituted or unsubstituted alkyl, substituted or unsubstituted alkenyl, substituted or unsubstituted alkynyl, substituted or unsubstituted aralkyl, substituted or unsubstituted alicyclic, and substituted or unsubstituted aryl, and substituted or unsubstituted heterocyclic.

2. The process as set forth in claim 1 , wherein the aqueous electrolytic composition comprises a polar organic solvent having a boiling point (neat) of at least 120° C.

3. A process as set forth in claim 1 wherein the quaternized poly(epihalohydrin) comprises additional repeating units comprising residues of at least one alkylene oxide.

4. A process as set forth in claim 3 , wherein the residues of alkylene oxide are selected from the group consisting of ethylene oxide, propylene oxide, butylene oxide, 3,4-epoxy-1-butanol, 2,3-epoxy-1-propanol, glycidol, and combinations of one or more of the foregoing.

5. A process as set forth in claim 1 , wherein repeating units of the poly(epihalohydrin) consist essentially of residues of epihalohydrin and residues of quaternized epihalohydrin corresponding to Structure (I):

wherein the quaternized poly(epihalohydrin) repeating units and non-quaternized epihalohydrin repeating units in said quaternized poly(epihalohydrin) are arranged in a block, alternating or random configuration.

6. A process as set forth in claim 1 , wherein Q corresponds to the structure that may be obtained by reacting a pendent methylene chloride group of poly(epihalohydrin) with a tertiary amine selected from the group consisting of N-methylmorpholine, imidazole, 1-methylimidazole, 1-benzylimidazole, 2-imidazoline, 3-imidazoline, 2-dimethylamino-1-ethanol, and 4-ethylpyridine.

7. A process as set forth in claim 2 , wherein the polar organic solvent is selected from the group consisting of ethylene glycol, propylene glycol, glycerin, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, and propylene glycol monomethyl ether.

8. A process as set forth in claim 1 , comprising depositing copper in a concavity in a surface of the base structure, wherein the concavity comprises one or more of a through silicon via, a submicron via or trench, or a through hole in a semiconductor assembly or printed circuit board.

9. A process as set forth in claim 1 , wherein the conductive layer is selected from the group consisting of a copper seed layer, a conductive polymer layer and an under bump metal pad.

10. A process as set forth in claim 1 , wherein the electrolytic deposition composition further comprises an accelerator.

11. A process as set forth in claim 1 , wherein said aqueous electrolytic composition contains:
Cu ++ ions in a concentration between about 5 and about 80 g/L;
an acid selected from the group consisting of sulfuric acid and an alkanesulfonic acid in a concentration between about 5 and about 80 g/L;
an accelerator in a concentration between about 1 and about 100 mg/L; and
a suppressor in a concentration up to 4000 mg/L.

12. A process as set forth in claim 11 , wherein the concentration of said quaternized polyepihalohydrin in said electrolytic composition is between 1 and about 100 mg/L.

13. A process as set forth in claim 1 , wherein:
an electrolytic circuit is established comprising the metalizing substrate comprising the conductive layer on a surface of the dielectric or semiconductor, an anode, the aqueous electrolytic composition in contact with said conductive layer and said anode, and a power source having a positive terminal in electrical communication with the anode and a negative terminal in electrical communication with the conductive layer; and
a current is passed through said circuit to deposit copper,
wherein copper is electrodeposited on the seminal conductive layer at an average current density between about 1 and about 25 amps/dm 2 integrated over the metalizing substrate.

14. A process as set forth in claim 1 , wherein the epihalohydrin comprises epichlorohydrin.

15. A process as set forth in claim 5 , wherein the polymeric moiety of structure (I) is bonded to a residual hydroxyl oxygen of an alcohol.

16. A composition for use in electrodeposition of copper for electrodeposition of copper on a dielectric or semiconductor base structure, the composition comprising:
Cu † ions;
an acid selected from the group consisting of sulfuric acid and an alkylsulfonic acid;
a suppressor;
a polar organic solvent characterized by a boiling point (neat) of at least 120° C.; and
a quatemized poly(epihalohydrin) comprising n repeating units corresponding to structure IN and p repeating units corresponding to structure IP:

wherein Q has a structure corresponding to a substituted or unsubstituted nitrogen-containing heteroaryl compound; n is an integer between 3 and 35, p is an integer between 0 and 25; and wherein n/(n+p)<1; X is a halo substituent; and X− is a monovalent anion, and wherein Q is

wherein structure IIC is a heterocyclic moiety and each of R 5 , R 6 , R 7 , R 8 and R 9 is independently selected from the group consisting of hydrogen, substituted or unsubstituted alkyl, substituted or unsubstituted alkenyl, substituted or unsubstituted alkynyl, substituted or unsubstituted aralkyl, substituted or unsubstituted alicyclic, and substituted or unsubstituted aryl, and substituted or unsubstituted heterocyclic.

17. A composition as set forth in claim 16 , wherein the quaternized poly(epihalohydrin) comprises additional repeating units comprising residues of at least one alkylene oxide.

18. A composition as set forth in claim 17 , wherein the residues of alkylene oxide are selected from the group consisting of ethylene oxide, propylene oxide, butylene oxide, 3,4-epoxy-1-butanol, 2,3-epoxy-1-propanol, glycidol, and combinations of one or more of the foregoing.

19. A composition as set forth in claim 16 , wherein the poly(epihalohydrin) consists essentia

Assignees

• Macdermid Enthone Inc

Inventors

• Paneccasio Jr Vincent
• Whitten Kyle
• Richardson Thomas B
• Li Ivan

Classifications

• H10W20/0261

  characterised by the filling method or the material of the conductive fill · CPC title

• H10P14/46

  using a liquid · CPC title

• H10W70/095

  of vias therein · CPC title

• H10W20/023

  the interconnections being through-semiconductor vias · CPC title

• C08G65/24

  Epihalohydrins · CPC title