Fabrication of correlated electron material devices with reduced interfacial layer impedance

Patent metadata

Field	Value
Publication number	US-10516110-B2
Application number	US-201615207708-A
Country	US
Kind code	B2
Filing date	Jul 12, 2016
Priority date	Jul 12, 2016
Publication date	Dec 24, 2019
Grant date	Dec 24, 2019

Abstract

Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, processes are described, which may be useful in avoiding formation of a potentially resistive oxide layer at an interfacial surface between a conductive substrate, for example, and a correlated electron material.

First claim

What is claimed is:

1. A method of constructing a switching device, comprising:
forming a substrate from a first conductive material;
exposing the substrate to at least a first agent to inhibit formation of an oxide layer on a first interfacial surface of the substrate; and
forming one or more layers of electron back-donating bulk-switching correlated electron material over the substrate,
wherein
the exposing of the substrate to the at least the first agent comprises annealing the substrate in a gaseous environment comprising nitrogen while maintaining a conductivity of the first interfacial surface of the substrate.

2. The method of claim 1 , further comprising:
prior to formation of a second conductive material over the one or more layers of correlated electron material, exposing at least one layer of the one or more layers of correlated electron material to a second agent to inhibit formation of the oxide layer on a second interfacial surface between the at least one layer of the one or more layers of correlated electron material and the second conductive material; and
wherein the gaseous environment comprises NH 3 , N 2 , NO or N 2 O, or any combination thereof.

3. The method of claim 2 , wherein the second agent comprises an oxygen barrier material deposited over a top layer of the one or more layers of correlated electron material.

4. The method of claim 3 , wherein the second agent comprises gaseous ammonia, nitric oxide or nitrous oxide, or combinations thereof.

5. The method of claim 2 , wherein the first conductive material and the second conductive material comprise substantially similar materials.

6. The method of claim 1 , wherein the first conductive material comprises titanium nitride.

7. The method of claim 1 , wherein exposing the substrate to at least the first agent comprises increasing the conductivity of the first interfacial surface of the substrate relative to one or more other layers of the substrate.

8. The method of claim 7 , wherein the increasing of the conductivity of the first interfacial surface of the substrate relative to the one or more other layers of the substrate comprises forming an oxygen barrier layer over the substrate.

9. The method of claim 1 , wherein the exposing the substrate to the at least a first agent brings about formation of one or more layers of NiTiO x N y over the substrate.

10. The method of claim 1 , wherein the forming of the one or more layers of correlated electron material comprises utilizing an atomic layer deposition process, a chemical vapor deposition process, a sputter deposition process or a spin on deposition process, or any combination thereof.

11. A method of fabricating a switching device, comprising:
forming one or more layers of electron back-donating bulk-switching correlated electron material over a conductive substrate;
forming one or more layers of conductive material over the one or more layers of correlated electron material; and
inhibiting formation of an oxide layer, on a first interfacial layer disposed over the conductive substrate, while maintaining a conductivity of the first interfacial layer, or on a second interfacial layer disposed over the one or more layers of correlated electron material while maintaining a conductivity of the second interfacial layer, wherein
the inhibiting of the formation of the oxide layer comprises annealing the conductive substrate, or the one or more layers of the correlated electron material, in a gaseous environment comprising nitrogen.

12. The method of claim 11 , further comprising:
increasing the conductivity of the first interfacial layer, or of the second interfacial layer or of the first interfacial layer and of the second interfacial layer, responsive to inhibiting the formation of the oxide layer, wherein the gaseous environment comprises NH 3 , N 2 , NO or N 2 O, or any combination thereof.

Assignees

• Advanced Risc Mach Ltd

Inventors

• Reid Kimberly Gay
• Shifren Lucian

Classifications

• C23C16/56

  After-treatment · CPC title

• C23C16/308

  Oxynitrides · CPC title

• H01L45/1253

  Electricity · mapped topic

• C23C16/34 Primary

  Nitrides {(C23C16/303 takes precedence)} · CPC title

• H01L45/146

  Electricity · mapped topic