Systems and methods for forming nanowires using anodic oxidation

Patent metadata

Field	Value
Publication number	US-10510837-B2
Application number	US-201615373723-A
Country	US
Kind code	B2
Filing date	Dec 9, 2016
Priority date	Mar 31, 2014
Publication date	Dec 17, 2019
Grant date	Dec 17, 2019

Abstract

Structures, devices and methods are provided for forming nanowires on a substrate. A first protruding structure is formed on a substrate. The first protruding structure is placed in an electrolytic solution. Anodic oxidation is performed using the substrate as part of an anode electrode. One or more nanowires are formed in the protruding structure. The nanowires are surrounded by a first dielectric material formed during the anodic oxidation.

First claim

What is claimed is:

1. A structure comprising:
a semiconductor substrate;
a protruding structure formed on the semiconductor substrate; and
a plurality of nanowires and one or more nano-vias formed in the protruding structure, the semiconductor substrate including a ridge section that extends under the protruding structure, the plurality of nanowires comprising a first nanowire and a second nanowire, the first nanowire of the plurality of nanowires being disposed closer to a major surface of the semiconductor substrate than the second nanowire of the plurality of nanowires, the second nanowire of the plurality of nanowires having a diameter greater than a diameter of the first nanowire of the plurality of nanowires.

2. The structure of claim 1 , wherein
each nanowire of the plurality of nanowires extends along a first direction, and
the ridge section extends along the first direction.

3. The structure of claim 1 , wherein the protruding structure includes a nanowire-shaped structure, a nanoslate, a nanorod, or a nanostructure disposed between pads.

4. The structure of claim 1 , wherein
the protruding structure has a width and a height,
an aspect ratio of the protruding structure is equal to the height divided by the width, and
the aspect ratio is larger than 1.

5. The structure of claim 1 , wherein the protruding structure includes a sidewall corresponding to a shape of which a top width is larger than a bottom width.

6. The structure of claim 1 , wherein the protruding structure includes (i) the plurality of nanowires, and (ii) dielectric material that surrounds each of the nanowires of the plurality of nanowires.

7. The structure of claim 6 , wherein a thickness of the dielectric material is greater in a lower portion of the protruding structure than in an upper portion of the protruding structure.

8. A device comprising:
a source region formed on a semiconductor substrate;
a drain region formed on the semiconductor substrate; and
a protruding structure including a plurality of nanowires and one or more nano-vias disposed between the source region and the drain region, wherein the semiconductor substrate includes a ridge section extending under each nanowire of the plurality of nanowires, wherein a first nano-via of the one or more nano-vias is disposed between a first nanowire and a second nanowire of the plurality of nanowires, the first nano-via of the one or more nano-vias being filled with air.

9. The device of claim 8 , wherein the ridge section extends under the protruding structure.

10. The device of claim 9 , wherein the protruding structure includes a nanowire-shaped structure, a nanoslate, a nanorod, or a nanostructure disposed between pads.

11. The device of claim 9 , wherein
the protruding structure has a width and a height,
an aspect ratio of the protruding structure is equal to the height divided by the width, and
the aspect ratio is larger than 1.

12. The device of claim 9 , wherein the protruding structure includes a sidewall corresponding to a shape of which a top width is larger than a bottom width.

13. The device of claim 9 , wherein the protruding structure includes (i) the plurality of nanowires, and (ii) dielectric material that surrounds each nanowire of the plurality of nanowires.

14. The device of claim 13 , wherein a thickness of the dielectric material is greater in a lower portion of the protruding structure than in an upper portion of the protruding structure.

15. The device of claim 8 ,
wherein each nanowire of the plurality of nanowires extends along a first direction, and
the ridge section extends along the first direction.

16. A structure comprising:
a semiconductor substrate; and
a protruding structure formed on the semiconductor substrate and comprising (i) one or more nanowires, (ii) one or more nano-vias, and (iii) dielectric material that surrounds each nanowire of the one or more nanowires and each nano-via of the one or more nano-vias, a thickness of the dielectric material being greater in a lower portion of the protruding structure than in an upper portion of the protruding structure.

17. The structure of claim 16 , wherein
the semiconductor substrate includes a ridge section that extends along the protruding structure,
each nanowire of the one or more nanowires extends along a first direction, and
the ridge section extends along the first direction.

18. The structure of claim 16 , wherein the protruding structure includes a nanowire-shaped structure, a nanoslate, a nanorod, or a nanostructure disposed between pads.

19. The structure of claim 16 , wherein
the protruding structure has a width and a height,
an aspect ratio of the protruding structure is equal to the height divided by the width, and
the aspect ratio is larger than 1.

20. The structure of claim 16 , wherein the protruding structure includes a sidewall corresponding to a shape of which a top width is larger than a bottom width.

Assignees

• Taiwan Semiconductor Mfg Co Ltd
• Univ Nat Taiwan

Inventors

• Hwu Jenn-Gwo
• Tian Wei-Cheng
• Tseng Po-Hao

Classifications

• H10P14/3462

  Nanowires · CPC title

• H10P14/6324

  Formation by anodic treatments, e.g. anodic oxidation · CPC title

• B82Y10/00

  Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic · CPC title

• C25D9/06

  by anodic processes · CPC title

• C25D11/32

  of semiconducting materials · CPC title