Methods of forming an ALD-inhibiting layer using a self-assembled monolayer
US-2017114451-A1 · Apr 27, 2017 · US
US10508337B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10508337-B2 |
| Application number | US-201715689187-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 29, 2017 |
| Priority date | Mar 13, 2015 |
| Publication date | Dec 17, 2019 |
| Grant date | Dec 17, 2019 |
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An atomic layer deposition-inhibiting material composed of a fluorine-containing resin that has a fluorine content of 30 at % or greater, has at least one tertiary carbon atom and quaternary carbon atom, and lacks ester groups, hydroxyl groups, carboxyl groups, and imide groups.
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The invention claimed is: 1. An atomic layer deposition-inhibiting material comprising a fluorine-containing resin represented by the following formula (I): X—[(CR 1 2 ) p —CR 4 R 5 —(CR 2 2 ) r —CR 6 R 7 —(CR 3 2 ) q ] n —Y (I) where: X and Y each independently is H, F, or CR 11 3 ; R 11 each independently is H or F; R 1 , R 2 , and R 3 each independently is H or F; R 4 and R 6 each independently is H, F, or an alkyl group having 1 to 6 carbon atoms; R 5 and R 7 each independently is an alkyl group having 1 to 6 carbon atoms; or R 5 and R 7 may together form a group represented by the following formula: —(O) s —(CR 12 2 ) t — where R 12 represents H, F, or an alkyl group having 1 to 6 carbon atoms, s represents an integer of 0 to 2, and t represents an integer of 1 to 6; p, q, and r each independently is an integer of 0 to 6; and n is a natural number. 2. The atomic layer deposition-inhibiting material according to claim 1 , wherein the fluorine-containing resin comprises a resin represented by the formula (I): R 1 and R 3 are F, p is 1 or 2, R 4 and R 6 are F, R 5 and R 7 together form —O—CF 2 —CF 2 — or —O—CF(CF 3 ) 2 —O—, q is 0 or 1, and r is 0. 3. The atomic layer deposition-inhibiting material according to claim 1 , wherein the fluorine-containing resin comprises no hydrogen atom.
the materials being fluorocarbon compounds, e.g. (CHxFy) n or polytetrafluoroethylene · CPC title
Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers · CPC title
Ceramic dielectrics {(H01G4/085 takes precedence)} · CPC title
Selection of materials · CPC title
Vapour deposited · CPC title
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