Method for processing silicon material

Patent metadata

Field	Value
Publication number	US-10505069-B2
Application number	US-201615557215-A
Country	US
Kind code	B2
Filing date	Mar 11, 2016
Priority date	Mar 13, 2015
Publication date	Dec 10, 2019
Grant date	Dec 10, 2019

Abstract

The present disclosure provides a method for accelerating the formation of defects in doped silicon. A doped silicon area is exposed with high intensity electromagnetic radiation to provide a substantial excess of majority carriers and promote a high rate of defect formation to allow efficient silicon passivation.

First claim

The claims as defined in the invention are as follows:

1. A method for accelerating the formation of defects in doped silicon, the method comprising the steps of:
exposing a portion of the doped silicon to electromagnetic radiation in a manner such that photons with an energy higher than that of a bandgap of the silicon provide a radiation intensity of at least 3 suns; and
wherein one or more parameters of the radiation source are selected in a manner such that a minimum excess majority carrier concentration higher than 10% of an effective doping concentration of the exposed portion is maintained in the exposed portion during exposure to the electromagnetic radiation; and
wherein the method further comprises the step of controlling a temperature of the silicon by varying the one or more parameters of the radiation during exposure in a manner such that electrically active defects are formed in at least a portion of the doped silicon and electrically active defects in the portion are passivated.

2. The method of claim 1 wherein the radiation is such that photons with energy higher than a bandgap of the silicon provide a radiation intensity of at least 10 suns.

3. The method of claim 1 wherein a minimum excess majority carrier concentration higher than 10% of an effective doping concentration of the doped silicon is maintained in the doped silicon for at least 90% of the exposure duration at radiation intensity of at least 3 suns.

4. The method of claim 1 wherein the minimum excess majority carrier concentration is at least twofold the effective doping concentration of the silicon.

5. The method of claim 1 wherein a passivation rate of the electrically active defects is higher than a formation rate of the electrically active defects.

6. The method of claim 5 wherein the steps of exposing a portion of the silicon to radiation and controlling a temperature of the silicon are performed in a manner such that the exposed portion reaches a stabilised condition in a predetermined period of time and, in the stabilised condition, further exposure of the exposed portion to radiation is capable of increasing the concentration of electrically active defects not more than a further 10%.

7. The method of claim 5 wherein the predetermined period of time is shorter than 20 seconds.

8. The method of any one of claim 5 wherein the method further comprises the step of cooling the silicon to a cooled temperature such to minimise reactivation of passivated defects.

9. The method of claim 5 further comprising the step of pre-heating the silicon to a process initial temperature, wherein the process initial temperature is selected based on one or more properties of the radiation used during the exposure step.

10. The method of claim 9 wherein the initial temperature is at least 150° C.

11. The method of claim 5 wherein the radiation has a pulsed waveform and the one or more parameters of the radiation varied during exposure comprise one or a combination of: frequency, duty cycle and amplitude of radiation pulse and the frequency is selected in manner such that the minimum excess majority carrier concentration is maintained throughout the duration of the pulse.

12. The method of claim 5 wherein the method further comprises the step of providing hydrogen atoms in the semiconductor material.

13. The method of claim 12 wherein the method further comprises the step of varying at least one parameter of the radiation during exposure to control the amount of hydrogen atoms in a given charge state.

14. The method of claim 1 wherein the doped silicon is part of silicon solar cell.

15. The method of any one of claim 6 wherein the electrically active defects comprise boron-oxygen defect.

16. A method for stabilising the performance of a photovoltaic cell comprising silicon material, the method comprising the steps of:
exposing a portion of the silicon material to electromagnetic radiation such that the portion of the silicon material reaches a temperature between 250° C. and 400° C. while exposed; the electromagnetic radiation being such that photons with energy higher than a bandgap of the silicon provide a radiation intensity of at least 10 suns; and
decreasing a power of the electromagnetic radiation during exposure in a manner such that the radiation intensity provided by photons with an energy higher than the bandgap of the silicon decreases and the temperature of the silicon material drops to a value below 150° C. in a predetermined period of time;
wherein a minimum excess majority carrier concentration higher than 10% of an effective doping concentration of the doped silicon is maintained in the doped silicon during the exposure of the doped silicon to the electromagnetic radiation.

17. The method of claim 16 wherein the steps of exposing a portion of the silicon to radiation and decreasing the power of the radiation during exposure are performed in a manner such that after the steps are performed the maximum loss of efficiency of the photovoltaic cell due to light induced degradation is 0.1% absolute.

18. A method of manufacturing a crystalline silicon homo-junction silicon solar cell, the method comprising the steps of:
providing a doped silicon substrate;
forming a p-n junction with the silicon substrate by introducing dopants having a polarity that is opposite to that of the silicon substrate; and
treating at least a portion of the silicon using the method in accordance with claim 1 .

19. A silicon solar cell manufactured in accordance with the method of claim 18 .

20. The method of claim 1 wherein the method is selectively applied to a localised portion of a silicon device to improve the performance of a structure disposed at the localised portion.

21. A method for accelerating the formation of defects in doped silicon, the method comprising the steps of:
exposing a portion of the doped silicon to electromagnetic radiation in a manner such that photons with an energy higher than that of a bandgap of the silicon provide a radiation intensity of at least 3 suns; and
wherein one or more parameters of the radiation source are selected in a manner such that a minimum excess majority carrier concentration higher than 10% of an effective doping concentration of the exposed portion is maintained in the exposed portion during exposure to the electromagnetic radiation; and
wherein the method further comprises the step of controlling a temperature of the silicon by varying the one or more parameters of the radiation during exposure; in a manner such that electrically active defects are formed in at least a portion of the doped silicon and electrically active defects in the portion are passivated and wherein a passivation rate of the electrically active defects is higher than a formation rate of the electrically active defects.

Assignees

• Newsouth Innovations Pty Ltd

Inventors

• Hallam Brett Jason
• Wenham Stuart Ross
• Abbott Malcolm David
• Hamer Phillip George

Classifications

• Y02E10/547

  Monocrystalline silicon PV cells · CPC title

• H01L31/1868 Primary

  Electricity · mapped topic

• H01L31/1804

  Electricity · mapped topic

• H10F71/129 Primary

  Passivating · CPC title

• H10F77/16

  Material structures, e.g. crystalline structures, film structures or crystal plane orientations · CPC title