Measuring method and measuring arrangement for an imaging optical system

Patent metadata

Field	Value
Publication number	US-10502545-B2
Application number	US-201715818080-A
Country	US
Kind code	B2
Filing date	Nov 20, 2017
Priority date	May 20, 2015
Publication date	Dec 10, 2019
Grant date	Dec 10, 2019

Abstract

A measurement arrangement and a method for measuring a wavefront aberration of an imaging optical system ( 10 ) of a microlithographic projection exposure apparatus. The method includes separate measurement of respective wavefront aberrations of different partial arrangements (M 1 ; M 2 ; M 3 ; M 1 , M 3 ) of the optical elements.

First claim

What is claimed is:

1. An apparatus, comprising:
a partial optical arrangement of a microlithographic exposure apparatus, wherein the partial optical arrangement comprises at least two optical elements; and
a measurement arrangement for measuring the partial optical arrangement of the microlithographic exposure apparatus, comprising:
a wavefront measurement apparatus configured to measure a wavefront aberration of the partial optical arrangement with measurement radiation, and
at least one adaptation module comprising one or more diffractive structure patterns that are operated in reflection or in transmission,
wherein the adaptation module is configured for manipulation of the wavefront of the measurement radiation such that the partial optical arrangement being measured and the at least one adaptation module in combination form an imaging optical arrangement.

2. The apparatus as claimed in claim 1 , wherein:
the partial optical arrangement is assigned to an imaging optical system, comprising a plurality of optical elements, of a microlithographic projection exposure apparatus and
the partial optical arrangement is formed by:
one of the optical elements of the imaging optical system, or
a partial arrangement of the optical elements of the imaging optical system.

3. The apparatus as claimed in claim 2 ,
wherein the partial optical arrangement is formed by a partial arrangement of the optical elements of the imaging optical system, wherein the partial optical arrangement differs from at least one section of the imaging optical system by presence of a gap that relates to at least one optical element.

4. The apparatus claimed in claim 1 ,
wherein the adaptation module is configured to shorten a back focal length of the partial optical arrangement being measured.

5. The apparatus as claimed in claim 1 ,
further comprising a calibration unit having an optical function of the partial optical arrangement being measured,
wherein the calibration unit is configured to calibrate the at least one adaptation module before measuring the partial optical arrangement, and
wherein the calibration is carried out by determining a wavefront aberration of an arrangement comprising the at least one adaptation module and the calibration unit.

6. The apparatus as claimed in claim 1 ,
wherein the at least one adaptation module comprises:
an input-side adaptation module configured to manipulate the measurement radiation, and arranged in a beam path of the measurement radiation upstream of the partial optical arrangement being measured, and
an output-side adaptation module configured to manipulate the measurement radiation, and arranged in the beam path of the measurement radiation downstream of the partial optical arrangement being measured.

7. The apparatus as claimed in claim 1 ,
wherein the at least one adaptation module contains at least two diffractive structure patterns that are superposed on one another, or are arranged in succession, in a beam path of the measurement radiation.

8. A method for measuring a wavefront aberration of an imaging optical system of a microlithographic projection exposure apparatus, comprising a plurality of optical elements configured to image a pattern from an object plane into an image plane, comprising:
arranging a measurement arrangement for measuring different partial optical arrangements of the optical elements in an optical path of measurement radiation, wherein each of the different partial optical arrangement comprises at least two optical elements;
measuring a first wavefront aberration of a first partial optical arrangement of the optical elements; and
measuring, separately from the measurement of the wavefront aberration of the first partial optical arrangement of the optical elements, a second wavefront aberration of a second partial optical arrangement of the optical elements.

9. The method as claimed in claim 8 ,
wherein at least one of the first partial optical arrangement or the second partial optical arrangement differs from at least one section of the imaging optical system as it includes at least one fewer optical element than the imaging optical system.

10. The method as claimed in claim 8 , further comprising:
providing the imaging optical system with a plurality of optical modules that respectively comprise at least two of the optical elements, and
effectuating the separate measurement of the respective wavefront aberrations of the first partial optical arrangement and the second partial optical arrangement through separate measurement of respective wavefront aberrations of individual ones of the optical modules.

11. The method as claimed in claim 8 ,
wherein the measuring of the first partial optical arrangement or the second partial optical arrangement comprises:
arranging a partial optical arrangement being measured and at least one adaptation module in a beam path of the measurement radiation of a wavefront measurement apparatus such that the partial optical arrangement being measured and the at least one adaptation module in combination form an imaging optical arrangement, and
determining the wavefront aberration of the imaging optical arrangement with the wavefront measurement apparatus.

12. The method as claimed in claim 11 ,
wherein the arranging of the at least one adaptation module comprises arranging an input-side adaptation module to manipulate the measurement radiation upstream of the partial arrangement being measured, and arranging an output-side adaptation module to manipulate the measurement radiation downstream of the partial arrangement being measured.

13. The method as claimed in claim 11 , further comprising:
using at least one diffractive structure pattern to manipulate the wavefront of the measurement radiation in the at least one adaptation module.

14. The method as claimed in claim 13 ,
wherein the diffractive structure pattern is operated in reflection to manipulate the wavefront of the measurement radiation.

15. The method as claimed in claim 13 ,
wherein, at least two diffractive structure patterns that are arranged successively in the beam path of the measurement radiation are used to manipulate the measurement radiation in the at least one adaptation module.

16. The method as claimed in claim 13 ,
wherein, at least two diffractive structure patterns that are arranged superposed on one another in the beam path are used to manipulate the measurement radiation in the at least one adaptation module.

17. A measurement arrangement for measuring a partial optical arrangement comprising at least two optical elements of a microlithographic projection exposure apparatus, comprising:
a wavefront measurement apparatus configured to measure a wavefront aberration of imaging optics with measurement radiation, and
at least one adaptation module
which has one or more diffractive structure patterns that are operated in reflection or in transmission, and
which is configured for manipulation of the wavefront of the measurement radiation such that the partial optical arrangement being measured and the at least one adaptation module in combination form an imaging optical arrangement, wherein the manipulation of the wavefront of the measurement radiation comprises manipulating an output of the partial optical arrangement that deviates by at least λ from an ideal spherical wave to a wavefront that does not deviate by more than λ at any point from an ideal spherical wave.

18. The measurement arrangement of claim 17 , wherein the output of the partial optical a

Assignees

• Zeiss Carl Smt Gmbh

Inventors

• Wegmann Ulrich
• Stiepan Hans-Michael
• Hetzler Jochen

Classifications

• G01B9/02034 Primary

  characterised by particularly shaped beams or wavefronts · CPC title

• G03F7/7085 Primary

  Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load · CPC title

• G03F7/706

  Aberration measurement · CPC title

• G01B11/24

  for measuring contours or curvatures · CPC title

• G01M11/0264 Primary

  by using targets or reference patterns · CPC title