Apparatus for manufacturing semiconductor device, method of manufacturing semiconductor device, and recording medium
US-9190299-B2 · Nov 17, 2015 · US
US10501847B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10501847-B2 |
| Application number | US-201515316646-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 17, 2015 |
| Priority date | Jul 1, 2014 |
| Publication date | Dec 10, 2019 |
| Grant date | Dec 10, 2019 |
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In a device and a method for generating vapor in a CVD or PVD device, particles are vaporized by bringing the particles into contact with a first heat transfer surface of a vaporization device. The vapor generated by vaporizing the particles is transported by a carrier gas out of the vaporization device and into a single or multistage modulation device. In a vapor transfer phase, second heat transfer surfaces of the modulation device are adjusted to a first modulation temperature, at which the vapor passes through the modulation device without condensing on the second heat transfer surfaces. At an intermission phase, the second heat transfer surfaces are adjusted to a second modulation temperature, at which at least some of the vapor condenses on the second heat transfer surfaces.
Opening claim text (preview).
What is claimed is: 1. A method for generating a vapor for a chemical vapor deposition (CVD) or physical vapor deposition (PVD) device, the method comprising: vaporizing, in a single or multistage vaporization device ( 1 , 2 ), solid or liquid particles into a vapor, wherein the particles are vaporized by bringing the particles into contact with a first heat transfer surface that has reached a vaporization temperature; transporting by a carrier gas the vapor out of the vaporization device ( 1 , 2 ) in a flow direction of the carrier gas; and transporting by the carrier gas the vapor through a single or multistage modulation device ( 3 , 4 ) which is arranged after the vaporization device ( 1 , 2 ) in the flow direction, wherein in a vapor transfer phase, second heat transfer surfaces of the modulation device ( 3 , 4 ) are adjusted to a first modulation temperature at which the vapor passes through the modulation device ( 3 , 4 ) without condensing in a material-cumulative manner on the second heat transfer surfaces, and in an intermission phase, the second heat transfer surfaces are cooled to a second modulation temperature at which at least a portion of the vapor condenses in a material-cumulative manner on the second heat transfer surfaces, and wherein the modulation device ( 3 , 4 ) is cooled to the second modulation temperature by introducing a cooling gas. 2. The method of claim 1 , wherein subsequent to a condensate of the vapor being deposited on the second heat transfer surfaces of the modulation device ( 3 , 4 ) at the second modulation temperature, the condensate is vaporized at the vaporization temperature, thereby reducing material accumulation of the condensate. 3. The method of claim 1 , further comprising adjusting a mass flow rate of the vapor by regulating a temperature of the modulation device ( 3 , 4 ) with a regulator ( 31 ), wherein the temperature of the modulation device ( 3 , 4 ) is regulated by performing one or more of controlling a heating power of a heating device of the modulation device ( 3 , 4 ) and controlling a mass flow rate of a cooling gas which is introduced into the modulation device ( 3 , 4 ). 4. The method of claim 1 , wherein the cooling gas is introduced into an intermediate space ( 12 ) either between the vaporization device ( 1 , 2 ) and the modulation device ( 3 , 4 ), or between two elements of the modulation device ( 3 , 4 ). 5. The method of claim 1 , further comprising: transporting the vapor from the modulation device ( 3 , 4 ) through a gas inlet body ( 24 ) of the CVD or PVD device; transporting the vapor from the gas inlet body ( 24 ) towards a substrate ( 26 ) disposed on a susceptor ( 25 ) of the CVD or PVD device, on which the vapor condenses due to a chemical reaction or a temperature decrease; and evacuating, by a vacuum pump ( 28 ), an interior of the CVD or PVD device. 6. An apparatus for generating a vapor for a chemical vapor deposition (CVD) or physical vapor deposition (PVD) device, the apparatus comprising: a single or multistage vaporization device ( 1 , 2 ) with a first heat transfer surface that is configured to, when heated to a vaporization temperature, vaporize solid or liquid particles, wherein the vapor generated by vaporization of the particles is transported out of the vaporization device ( 1 , 2 ) by a carrier gas in a flow direction of the carrier gas; a single or multistage modulation device ( 3 , 4 ), arranged after the vaporization device ( 1 , 2 ) in the flow direction, having second heat transfer surfaces that are adjusted to a first modulation temperature at which the vapor passes through the modulation device ( 3 , 4 ) without condensing in a material-cumulative manner on the second heat transfer surfaces, and a second modulation temperature at which at least a portion of the vapor condenses in a material-cumulative manner on the second heat transfer surfaces; and a supply pipe ( 14 ) for supplying a cooling gas into the modulation device ( 3 , 4 ). 7. The apparatus of claim 6 , wherein the second heat transfer surfaces are formed by surfaces of walls of open-pored cells of a foam body. 8. The apparatus of claim 6 , wherein the vaporization device ( 1 , 2 ) and the modulation device ( 3 , 4 ) each comprise two open-pored foam bodies arranged one after the other in the flow direction. 9. The apparatus of claim 6 , wherein four substantially identically designed foam bodies ( 1 , 2 , 3 , 4 ) are arranged one after the other in the flow direction in an evaporator housing, wherein walls ( 7 , 8 ) of said housing arranged downstream of the modulation device ( 3 , 4 ) are heated to a temperature which is above the vaporization temperature. 10. The apparatus of claim 6 , further comprising a sensor ( 29 ), arranged downstream of the modulation device ( 3 , 4 ), that is configured to measure a partial pressure or concentration of the vapor in the carrier gas. 11. The apparatus of claim 6 , further comprising: a gas inlet body ( 24 ) and a susceptor ( 25 ), wherein the vapor transported by the carrier gas through the gas inlet body ( 24 ) is transported towards a substrate ( 26 ) disposed on the susceptor ( 25 ), on which the vapor condenses due to a chemical reaction or a temperature decrease; and a vacuum pump ( 28 ) configured to evacuate an interior of the CVD or PVD device. 12. The apparatus of claim 7 , wherein the foam body is composed of an electrically conductive material that is heated by passing an electrical current through the foam body, wherein the foam body has a porosity of 200 to 500 pores per inch, and/or wherein a proportion of all open areas on a surface of the foam body is greater than 90%. 13. An apparatus for generating a vapor for a chemical vapor deposition (CVD) or physical vapor deposition (PVD) device, the apparatus comprising: a single or multistage vaporization device ( 1 , 2 ) with a first heat transfer surface that is configured to, when heated to a vaporization temperature, vaporize solid or liquid particles, wherein the vapor generated by vaporization of the particles is transported out of the vaporization device ( 1 , 2 ) by a carrier gas in a flow direction of the carrier gas; and a single or multistage modulation device ( 3 , 4 ), arranged after the vaporization device ( 1 , 2 ) in the flow direction, having second heat transfer surfaces that are adjusted to a first modulation temperature at which the vapor passes through the modulation device ( 3 , 4 ) without condensing in a material-cumulative manner on the second heat transfer surfaces, and a second modulation temperature at which at least a portion of the vapor condenses in a material-cumulative manner on the second heat transfer surfaces, wherein the vaporization device ( 1 , 2 ) and the modulation device ( 3 , 4 ) each comprise two open-pored foam bodies arranged one after the other in the flow direction, and wherein a first foam body of the vaporization device ( 2 ) is configured as a pre-heating device for the carrier gas and is spaced apart from a second foam body of the vaporization device ( 2 ) by an intermediate space ( 10 ), the apparatus further comprising an aerosol supply pipe ( 9 ) connected to the intermediate space ( 10 ), the aerosol supply pipe ( 9 ) configured to supply an aerosol comprising the solid or liquid particles into the intermediate space ( 10 ). 14. An apparatus for generating a vapor for a chemical vapor deposition (CVD) or physical vapor deposition (PVD) device, the apparatus comprising: a single or multistage vaporization device ( 1 , 2 ) with a first heat transfer surface that is configured to, w
Replenishment of source material · CPC title
by using a condenser · CPC title
by producing an aerosol and subsequent evaporation of the droplets or particles · CPC title
Organic material · CPC title
using a porous body · CPC title
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