Cleaner composition and preparation of thin substrate

Patent metadata

Field	Value
Publication number	US-10501710-B2
Application number	US-201715490041-A
Country	US
Kind code	B2
Filing date	Apr 18, 2017
Priority date	Apr 26, 2016
Publication date	Dec 10, 2019
Grant date	Dec 10, 2019

Abstract

A cleaner composition consisting essentially of (A) 90.0-99.9 wt % of an organic solvent and (B) 0.1-10.0 wt % of a C3-C6 alcohol, and containing (C) 20-300 ppm of sodium and/or potassium is effective for cleaning a surface of a silicon semiconductor substrate. A satisfactory degree of cleanness is achieved within a short time and at a high efficiency without causing corrosion to the substrate.

First claim

The invention claimed is:

1. A cleaner composition for cleaning a surface of a substrate, consisting essentially of
(A) 90.0 to 99.9% by weight of an organic solvent exclusive of an alcohol of 3 to 6 carbon atoms, and
(B) 0.1 to 10.0% by weight of an alcohol of 3 to 6 carbon atoms,
the composition containing (C) sodium and/or potassium in an amount of 0.002 to 0.03 part by weight per 100 parts by weight of components (A) and (B) combined,
wherein the organic solvent (A) is an aliphatic hydrocarbon of 5 to 20 carbon atoms or a dialkylene glycol dialkyl ether of 5 to 20 carbon atoms, wherein the composition is free of water.

2. The cleaner composition of claim 1 wherein component (C) is present in the form of sodium hydroxide and/or potassium hydroxide.

3. The cleaner composition of claim 1 wherein the organic solvent (A) is an aliphatic hydrocarbon of 5 to 20 carbon atoms.

4. The cleaner composition of claim 1 wherein the organic solvent (A) is a dialkylene glycol dialkyl ether of 5 to 20 carbon atoms.

5. The cleaner composition of claim 1 , further comprising a quaternary ammonium salt.

6. The cleaner composition of claim 1 wherein the substrate is a semiconductor substrate.

7. A method for preparing a thin substrate, comprising the steps of
(a) forming an adhesive layer on a substrate or handle substrate from an adhesive composition and bonding the substrate and the handle substrate via the adhesive layer,
(b) processing the substrate bonded to the handle substrate,
(c) separating the substrate as processed from the handle substrate, the adhesive layer remaining on the substrate after separation, and
(d) cleaning away the adhesive layer on the substrate with the cleaner composition, wherein the cleaner composition consisting essentially of
(A) 90.0 to 99.9% by weight of an organic solvent exclusive of an alcohol of 3 to 6 carbon atoms, and
(B) 0.1 to 10.0% by weight of an alcohol of 3 to 6 carbon atoms,
the composition containing (C) sodium and/or potassium in an amount of 0.002 to 0.03 part by weight per 100 parts by weight of components (A) and (B) combined, wherein the organic solvent (A) is an aliphatic hydrocarbon of 5 to 20 carbon atoms or a dialkylene glycol dialkyl ether of 5 to 20 carbon atoms, wherein the composition is free of water.

8. The method of claim 7 wherein the adhesive composition comprises a silicone compound.

9. The method of claim 8 wherein the silicone compound is a partial dehydration condensate of a linear or branched organopolysiloxane having at least two silicon-bonded hydroxyl groups with an organopolysiloxane resin comprising R 3 SiO 1/2 units wherein R is a monovalent hydrocarbon group and SiO 2 units and containing a hydroxyl group.

10. The cleaner composition of claim 1 wherein the aliphatic hydrocarbon of the organic solvent (A) is one or more kinds selected from the group consisting of octane, nonane, decane, undecane, dodecane, tetradecane, hexadecane, isooctane, isononane, isodecane, isododecane, alkylcyclohexanes, and p-menthane.

11. The cleaner composition of claim 1 , wherein the substrate surface cleaned with the cleaner composition has a contact angle with water of less than 100°.

Assignees

• Shinetsu Chemical Co

Inventors

• Ueno Masaya
• Yanagisawa Hideyoshi

Classifications

• H10P72/7402

  Wafer tapes, e.g. grinding or dicing support tapes · CPC title

• H10P70/27

  during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · CPC title

• H10P70/20

  Cleaning during device manufacture · CPC title

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H10P50/287

  by chemical means · CPC title