Chemical mechanical polishing apparatus and methods

Patent metadata

Field	Value
Publication number	US-10500694-B2
Application number	US-201715635770-A
Country	US
Kind code	B2
Filing date	Jun 28, 2017
Priority date	Jan 11, 2013
Publication date	Dec 10, 2019
Grant date	Dec 10, 2019

Abstract

A substrate polishing apparatus is disclosed that includes a polishing platform having two or more zones, each zone adapted to receive a different slurry component. A substrate polishing system is provided having a holder to hold a substrate, a polishing platform having a polishing pad, and a distribution system adapted to dispense, in a timed sequence, at least two different slurry components selected from a group consisting of an oxidation slurry component, a material removal slurry component, and a corrosion inhibiting slurry component. Polishing methods and systems adapted to polish substrates are provided, as are numerous other aspects.

First claim

The invention claimed is:

1. A method of polishing a substrate, comprising:
providing a substrate in a substrate holder;
providing a polishing platform having a moveable polishing pad;
dispensing a first slurry component into two or more first zones on the polishing pad; and
dispensing a second slurry component into one or more second zones on the polishing pad,
wherein the first and second slurry components are different slurry components with one of the first and second slurry components including an abrasive or etchant without an oxidizer and another of the first and second slurry components including an oxidizer without an abrasive and without an etchant.

2. The method of claim 1 , wherein the first slurry component includes the abrasive or the etchant.

3. The method of claim 1 , further comprising dispensing a rinsing liquid onto the polishing pad.

4. The method of claim 1 , further comprising dispensing a rinsing liquid into a zone located between at least one of the two or more first zones and at least one of the one or more second zones.

5. The method of claim 1 , wherein dispensing the first slurry component and the second slurry component comprises dispensing the first slurry component and the second slurry component concurrently.

6. The method of claim 1 , wherein two or more first zones have widths in a range of 2 mm to 50 mm.

7. A method of polishing a substrate, comprising:
providing a substrate in a substrate holder;
providing a polishing platform having a moveable polishing pad; and
dispensing between the polishing pad and the substrate, in a timed sequence, a first slurry component into two or more first zones and a second slurry component into one or more second zones, the first slurry component having a different chemical composition than the second slurry component with one of the first and second slurry components including an abrasive or etchant without a corrosion inhibitor and another of the first and second slurry components including a corrosion inhibitor without an abrasive and without an etchant.

8. The method of claim 7 , wherein the first slurry component includes the abrasive or etchant.

9. The method of claim 7 , further comprising dispensing a rinsing liquid between the polishing pad and the substrate.

10. The method of claim 7 , further comprising dispensing a rinsing liquid into a zone located between at least one of the two or more first zones and at least one of the one or more second zones.

11. The method of claim 7 , wherein two or more first zones have widths in a range of 2 mm to 50 mm.

12. A method of polishing a substrate, comprising:
providing a plurality of individual slurry component supplies including a first slurry component supply configured to supply an oxidizer without an etchant, without an abrasive and without a corrosion inhibitor, a second slurry component supply configured to supply an abrasive or etchant without a oxidizer and without a corrosion inhibitor, and a third slurry component supply configured to supply a corrosion inhibitor without an oxidizer, without an etchant and without an abrasive;
dispensing a first slurry component onto two or more first zones of a polishing platform via a distribution system configured to dispense the first slurry component from the plurality of individual slurry component supplies; and
dispensing a second slurry component onto one or more second zones of the polishing platform via the distribution system.

13. The method of claim 12 wherein the first slurry component and the second slurry component are provided in the two or more first zones and the one or more second zones concurrently.

14. The method of claim 12 , further comprising dispensing a rinsing liquid onto the polishing platform.

15. The method of claim 12 , further comprising dispensing a rinsing liquid into a zone located between at least one of the two or more first zones and at least one of the one or more second zones.

Assignees

• Applied Materials Inc

Inventors

• Bajaj Rajeev
• Osterheld Thomas H
• Chen Hung
• Lee Terrance Y

Classifications

• H10P72/0428

  Apparatus for mechanical treatment or grinding or cutting · CPC title

• H10P72/0422

  for wet etching · CPC title

• H10P52/403 Primary

  of conductive or resistive materials · CPC title

• H10P52/402 Primary

  of semiconductor materials · CPC title

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title