Optical detector, fabrication method thereof, fingerprint recognition sensor, and display device

Patent metadata

Field	Value
Publication number	US-10496868-B2
Application number	US-201715745048-A
Country	US
Kind code	B2
Filing date	Sep 5, 2017
Priority date	Mar 13, 2017
Publication date	Dec 3, 2019
Grant date	Dec 3, 2019

Abstract

An optical detector includes a stacked structure, an active layer, a gate insulating layer, and a gate electrode. The stacked structure includes a first electrode, a photoelectric conversion layer, a second electrode, a first insulating layer, and a third electrode. The active layer is electrically coupled to one of the first electrode or the second electrode, and electrically coupled to the third electrode. The gate insulating layer is arranged on the active layer. The gate electrode is arranged on the gate insulating layer.

First claim

What is claimed is:

1. An optical detector, comprising:
a stacked structure including a first electrode, a photoelectric conversion layer, a second electrode, a first insulating layer, and a third electrode;
an active layer electrically coupled to one of the first electrode or the second electrode, and electrically coupled to the third electrode;
a gate insulating layer on the active layer;
a gate electrode on the gate insulating layer; and
a second insulating layer arranged between the active layer and the photoelectric conversion layer, and between the active layer and the second electrode,
wherein the active layer is electrically coupled to the first electrode and is electrically insulated from the second electrode.

2. The optical detector according to claim 1 , wherein:
the second insulating layer is arranged on a side wall of the photoelectric conversion layer and a sidewall of the second electrode; and
the active layer is formed on an edge region of an upper surface of the first electrode, the second insulating layer, and the third electrode.

3. The optical detector according to claim 1 , wherein:
each of the active layer, the gate insulating layer, and the gate electrode includes two portions arranged on two opposite sides of the stacked structure.

4. A method for fabricating an optical detector of claim 1 , comprising:
fabricating a stacked structure on a substrate, the stacked structure including a first electrode, a photoelectric conversion layer, a second electrode, a first insulating layer, and a third electrode;
fabricating an active layer electrically coupled to one of the first electrode or the second electrode, electrically coupled to the third electrode, and electrically insulated from the photoelectric conversion layer;
fabricating a gate insulating layer on the active layer; and
fabricating a gate electrode on the gate insulating layer;
wherein fabricating the active layer includes:
forming a second insulating layer on a side wall of the photoelectric conversion layer and a sidewall of the second electrode; and
forming the active layer on an edge region of an upper surface of the first electrode, the second insulating layer, and the third electrode, such that the active layer is electrically coupled to the first electrode and electrically insulated from the second electrode.

5. The method according to claim 4 , wherein fabricating the stacked structure includes:
forming a composite layer including a third electrode material layer, a first insulating layer material layer, a second electrode material layer, a photoelectric conversion material layer, and a first electrode material layer on the substrate; and
performing a patterning process on the composite layer to form the third electrode, the first insulating layer, the second electrode, the photoelectric conversion layer, and the first electrode.

6. A fingerprint recognition sensor, comprising the optical detector according to claim 1 and a touch surface.

7. A display apparatus, comprising the fingerprint recognition sensor according to claim 6 and a display panel.

8. An optical detector, comprising:
a stacked structure including a first electrode, a photoelectric conversion layer, a second electrode, a first insulating layer, and a third electrode;
an active layer electrically coupled to one of the first electrode or the second electrode, and electrically coupled to the third electrode;
a gate insulating layer on the active layer; and
a gate electrode on the gate insulating layer;
wherein the active layer is electrically coupled to the second electrode and is electrically insulated from the first electrode; and
the active layer is formed on a sidewall of the second electrode, a sidewall of the first insulating layer, and the third electrode.

9. A method for fabricating an optical detector of claim 8 , comprising:
fabricating a stacked structure on a substrate, the stacked structure including a first electrode, a photoelectric conversion layer, a second electrode, a first insulating layer, and a third electrode;
fabricating an active layer electrically coupled to one of the first electrode or the second electrode, electrically coupled to the third electrode, and electrically insulated from the photoelectric conversion layer;
fabricating a gate insulating layer on the active layer; and
fabricating a gate electrode on the gate insulating layer;
wherein fabricating the active layer includes:
forming the active layer on a sidewall of the second electrode, a sidewall of the first insulating layer, and the third electrode, such that the active layer is electrically coupled to the second electrode and electrically insulated from the first electrode.

10. The method according to claim 9 , wherein fabricating the stacked structure includes:
forming a composite layer including a third electrode material layer, a first insulating layer material layer, a second electrode material layer, a photoelectric conversion material layer, and a first electrode material layer on the substrate; and
performing a patterning process on the composite layer to form the third electrode, the first insulating layer, the second electrode, the photoelectric conversion layer, and the first electrode.

11. The optical detector according to claim 8 , wherein:
each of the active layer, the gate insulating layer, and the gate electrode includes two portions arranged on two opposite sides of the stacked structure.

12. A fingerprint recognition sensor, comprising the optical detector according to claim 8 and a touch surface.

13. A display apparatus, comprising the fingerprint recognition sensor according to claim 12 and a display panel.

Assignees

• Boe Technology Group Co Ltd

Inventors

• Sun Jianming
• Ning ce
• Zhang Wenlin

Classifications

• H10D64/011

  of electrodes ohmically coupled to a semiconductor · CPC title

• H04N23/55

  Optical parts specially adapted for electronic image sensors; Mounting thereof · CPC title

• G02B6/132

  by deposition of thin films · CPC title

• G02F1/1343

  Electrodes {(reflective electrodes G02F1/133553)} · CPC title

• H01L27/1255

  Electricity · mapped topic