Apparatus and method for predicting fault state of inverter

Patent metadata

Field	Value
Publication number	US-10495682-B2
Application number	US-201615384266-A
Country	US
Kind code	B2
Filing date	Dec 19, 2016
Priority date	Aug 11, 2016
Publication date	Dec 3, 2019
Grant date	Dec 3, 2019

Abstract

Disclosed are an apparatus and a method for predicting a fault state of an inverter. The apparatus for predicting a fault state of an inverter includes: an inverter converting DC power into AC power; a switching element provided in the inverter; and a controller extracting a fault sign factor based on an output signal output from the inverter and predicting a fault of the switching element based on the fault sign factor.

First claim

What is claimed is:

1. An apparatus for predicting a fault state of an inverter, the apparatus comprising:
an inverter converting DC power into AC power;
a switching element provided in the inverter; and
a controller extracting a fault sign factor based on an output signal output from the inverter and predicting a fault of the switching element based on the fault sign factor,
wherein the controller includes,
a collection unit collecting the output signal output to the inverter,
an extraction unit extracting the fault sign factor including at least one of threshold voltage, a first on time, and a second on time from the output signal, and
a fault diagnosing unit predicting the fault of the switching element based on the fault sign factor, and
wherein the fault diagnosing unit determines whether the first on time is equal to or more than a first reference value, determines whether the first on time is equal to or more than a second reference value when the first on time is equal to or more than the first reference value, and diagnoses a state of the switching element as a first deterioration state when the second on time is less than the second reference value.

2. The apparatus of claim 1 , wherein the threshold voltage is voltage between a gate and an emitter of the switching element, which is required for turning on the switching element.

3. The apparatus of claim 1 , wherein the first on time is a time required for the switching element to be turned on when a signal having a square waveform is input in the gate of the switching element.

4. The apparatus of claim 1 , wherein the second on time is a time required for the switching element to be turned on when a signal having a triangular waveform is input in the gate of the switching element.

5. The apparatus of claim 1 , wherein the fault diagnosing unit determines whether the threshold voltage is equal to or less than a third reference value when the second on time is equal to or more than the second reference value and diagnoses the state of the switching element as a second deterioration state when the threshold voltage is more than a third reference value.

6. The apparatus of claim 5 , wherein the fault diagnosing unit diagnoses the state of the switching element as a third deterioration state when the threshold voltage is equal to or less than the third reference value.

7. The apparatus of claim 1 , wherein the controller determines that the switching element is in a fault state when output current of the output signal is equal to or more than reference current.

8. The apparatus of claim 1 , wherein the switching element is an insulated gate bipolar transistor (IGBT).

9. The apparatus of claim 1 , wherein the controller controls a warning unit to output result information to predict the fault of the switching element.

10. A method for predicting a fault state of an inverter, the method comprising:
collecting an output signal output from an IGBT provided in the inverter;
extracting a fault sign factor including at least one of threshold voltage, a first on time, and a second on time from the output signal; and
predicting a fault of the IGBT based on the fault sign factor,
wherein the predicting of the fault of the IGBT based on the fault sign factor includes,
determining whether the first on time is equal to or more than a first reference value,
determining whether the second on time is equal to or more than a second reference value when the first on time is equal to or more than the first reference value, and
diagnosing a state of the IGBT as a first deterioration state when the second on time is less than the second reference value.

11. The method of claim 10 , wherein the threshold voltage is voltage between a gate and an emitter of the IGBT, which is required for turning on the IGBT.

12. The method of claim 10 , wherein the first on time is a time when the IGBT is turned on when a signal having a square waveform is input in the gate of the IGBT and the second on time is a time when the IGBT is turned on when the signal having the square waveform is input in the gate of the IGBT.

13. The method of claim 10 , wherein the predicting of the fault of the IGBT based on the fault sign factor further includes,
determining whether the threshold voltage is equal to or less than a third reference value when the second on time is equal to or more than the second reference value, and
diagnosing a state of the IGBT as a second deterioration state when the threshold voltage is more than the third reference value.

14. The method of claim 13 , wherein the predicting of the fault of the IGBT based on the fault sign factor further includes,
diagnosing the state of the IGBT as a third deterioration state when the threshold voltage is equal to or less than the third reference value.

15. The method of claim 10 , wherein the predicting of the fault of the IGBT based on the fault sign factor includes,
determining that the IGBT is in the fault state when output current of the fault sign factor is equal to or more than reference current.

16. The method of claim 10 , further comprising outputting result information to predict the fault of the IGBT.

Assignees

• Hyundai Motor Co Ltd
• Seoul Nat Univ R&Db Foundation

Inventors

• Kim Deog Hyeon
• Cho Yong Un
• Lim Yongchae
• Youn Byeng Dong
• Oh Hyunseok
• Lee Junmin

Classifications

• G01R31/3277

  of low voltage devices, e.g. domestic or industrial devices, such as motor protections, relays, rotation switches · CPC title

• G01R19/16585

  for individual pulses, ripple or noise and other applications where timing or duration is of importance (G01R19/16519, G01R19/16538 and G01R19/16595 take precedence; for pulse duration and rise time, see G01R29/02 and subgroups) · CPC title

• G01R31/2617 Primary

  for measuring switching properties thereof · CPC title

• H02H7/1225

  responsive to internal faults, e.g. shoot-through (avoiding shoot-through H02M1/38) · CPC title

• G01R19/16571

  comparing AC or DC current with one threshold, e.g. load current, over-current, surge current or fault current (G01R19/16514, G01R19/16519, G01R19/16528, G01R19/16533, G01R19/1659 take precedence; measuring currents by using elements sensitive to the magnetic field generated G01R15/14; measuring earth resistance G01R27/18; testing for leakage or short circuits in electrical apparatus G01R31/52) · CPC title