Topographical structure and method of producing it

Patent metadata

Field	Value
Publication number	US-10491189-B2
Application number	US-201314413285-A
Country	US
Kind code	B2
Filing date	Jul 31, 2013
Priority date	Aug 3, 2012
Publication date	Nov 26, 2019
Grant date	Nov 26, 2019

Abstract

A topographical structure includes a carrier layer (TS); at least one metal layer (M) applied on the carrier layer; a marginal topology edge at the metal layer; and a structured cover (AB) at the topology edge.

First claim

The invention claimed is:

1. A bulk acoustic wave (BAW) resonator, comprising:
a carrier layer;
at least one metal layer applied on the carrier layer and having a marginal topology edge extending between an uppermost surface of the at least one metal layer and a surface of the carrier layer adjacent a lowermost surface of the at least one metal layer;
a structured cover at the marginal topology edge and having an outer surface with an inclination angle relative to the carrier layer that changes continuously over the entire outer surface with increasing distance from the marginal topology edge and is more obtuse than an angle between the at least one metal layer and the carrier layer, wherein the structured cover comprises polyimide; and
a layer of a piezoelectric material applied on the uppermost surface of the at least one metal layer and on the outer surface of the structured cover.

2. The BAW resonator according to claim 1 , wherein the at least one metal layer comprises a first metal layer and a second metal layer applied on the first metal layer.

3. The BAW resonator according to claim 2 , wherein the first metal layer is corrosion-sensitive.

4. The BAW resonator according to claim 3 , wherein the first metal layer comprises aluminum, titanium nitride, silver or copper.

5. The BAW resonator according to claim 3 , wherein the second metal layer is not corrosion-sensitive or is less corrosion-sensitive than the first metal layer.

6. The BAW resonator according to claim 5 , wherein the second metal layer comprises tungsten, tantalum, molybdenum, platinum or gold.

7. The BAW resonator according to claim 2 , wherein the structured cover at the marginal topology edge and the second metal layer cover surfaces of the first metal layer, other than the lowermost surface of the at least one metal layer.

8. The BAW resonator according to claim 1 , wherein the at least one metal layer comprises an electrode or a multilayer electrode produced using thin-film technology.

9. The BAW resonator according to claim 1 , wherein the structured cover at the marginal topology edge is less corrosion-sensitive than a portion of the at least one metal layer.

10. The BAW resonator according to claim 1 , wherein the piezoelectric material comprises lithium niobate or lithium tantalate.

Assignees

• Snaptrack Inc
• Qualcomm Inc

Inventors

• Marksteiner Stephan

Classifications

• H03H9/25

  Constructional features of resonators using surface acoustic waves {(devices for manipulating acoustic surface waves in general G10K11/36)} · CPC title

• H03H9/171 Primary

  implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type · CPC title

• H03H9/02133

  of stress · CPC title

• H03H9/19

  consisting of quartz · CPC title

• H03H3/02

  for the manufacture of piezoelectric or electrostrictive resonators or networks (H03H3/08 takes precedence) · CPC title