Temperature compensated bulk acoustic wave device by neutral stress plane engineering through double sided silicon substrate integration
US-12052010-B2 · Jul 30, 2024 · US
US9166552B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9166552-B2 |
| Application number | US-201213477732-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 22, 2012 |
| Priority date | May 24, 2011 |
| Publication date | Oct 20, 2015 |
| Grant date | Oct 20, 2015 |
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A filter includes one or a plurality of parallel resonators coupled in parallel and one or a plurality of a film bulk acoustic resonators coupled in series, the film bulk acoustic resonator having a substrate, a lower electrode, a piezoelectric membrane, and an upper electrode, wherein: at least one of the lower electrode and the upper electrode has a thick membrane region having a thickness larger than that of a center portion of a resonance region at an edge of the resonance region, the resonance region being a region where the lower electrode and the upper electrode face with each other through the piezoelectric membrane; and a width of the thick membrane region is smaller than a wavelength of an acoustic wave propagating in a direction crossing a thickness direction of the piezoelectric membrane.
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What is claimed is: 1. A filter comprising: one or a plurality of parallel resonators coupled between an inputting terminal and an outputting terminal in parallel; and one or a plurality of film bulk acoustic resonators that act as a series resonator and are coupled between the inputting terminal and the outputting terminal in series, at least one of the one or plurality of film bulk acoustic resonators having a substrate, a lower electrode provided on the substrate, a piezoel…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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