Method and apparatus for processing wafer-shaped articles

Patent metadata

Field	Value
Publication number	US-10490426-B2
Application number	US-201414469363-A
Country	US
Kind code	B2
Filing date	Aug 26, 2014
Priority date	Aug 26, 2014
Publication date	Nov 26, 2019
Grant date	Nov 26, 2019

Abstract

A device for processing wafer-shaped articles comprises a closed process chamber that provides a gas-tight enclosure. A rotary chuck is located within the closed process chamber. A heater is positioned relative to the chuck so as to heat a wafer shaped article held on the chuck from one side only and without contacting the wafer shaped article. The heater emits radiation having a maximum intensity in a wavelength range from 390 nm to 550 nm. At least one first liquid dispenser is positioned relative to the chuck so as to dispense a process liquid onto a side of a wafer shaped article that is opposite the side of the wafer-shaped article facing the heater.

First claim

What is claimed is:

1. A device for processing a wafer, the device comprising:
a process chamber providing a gas-tight enclosure;
a rotary chuck located within the process chamber and above the wafer, wherein the rotary chuck comprises a first plate, wherein the first plate is located above the wafer and rotates with the rotary chuck, wherein the rotary chuck is adapted to hold the wafer, and wherein the first plate is cooled via a first cooling fluid;
a heater positioned relative to the rotary chuck and facing an underside of the wafer, wherein the heater is configured to heat the underside of the wafer, wherein the heater emits radiation having a maximum intensity in a wavelength range between 390-550 nanometers,
wherein the rotary chuck holds the wafer between the first plate and the heater, wherein the heater heats the underside of the wafer, wherein no heater is disposed on an upper side of the wafer, and wherein the upper side opposes the underside; and
a first liquid dispenser positioned relative to the chuck and configured to dispense a process liquid onto the upper side of the wafer, wherein the upper side is opposite the underside of the wafer,
wherein
the process chamber comprises an upper region above the wafer in which an outlet of the first liquid dispenser is located and a lower region below the wafer in which the heater is located, and
the heater is non-rotatably mounted within the process chamber.

2. The device according to claim 1 , wherein the rotary chuck comprises a magnetic ring rotor positioned inside the process chamber and surrounded by a stator positioned outside the process chamber.

3. The device according to claim 1 , wherein:
the rotary chuck is driven by a motor; and
an output of the motor is transmitted to a rotary shaft connected to the rotary chuck.

4. The device according to claim 1 , wherein the heater emits radiation having a maximum intensity in a wavelength range between 400-500 nanometers.

5. The device according to claim 1 , wherein the heater comprises an array of blue light-emitting diodes.

6. The device according to claim 5 , wherein the array of blue light-emitting diodes occupies an area that is coextensive with or larger than an area occupied by the wafer.

7. The device of claim 5 , wherein the blue light-emitting diodes occupy an area larger than an area occupied by the wafer.

8. The device according to claim 1 , further comprising an ozone generator configured to deliver an ozone gas to a gas inlet of the process chamber.

9. The device according to claim 8 , wherein:
the gas inlet is positioned relative to the rotary chuck and delivers the ozone gas toward the upper side of the wafer during a drying process; and
the heater is configured to heat the wafer to activate the ozone gas in the process chamber.

10. The device according to claim 9 , wherein the heater heats the wafer until the wafer is greater than or equal to 300° C.

11. The device of claim 9 , wherein the first liquid dispenser and the gas inlet operates in alternating manner, such that a wet process and the drying process are alternately performed while the heater heats the wafer to remove photoresist from the wafer without use of sulfuric acid.

12. The device of claim 11 , wherein the process liquid includes ammonium hydroxide or hydrogen peroxide.

13. The device of claim 9 , wherein, while the heater is heating the wafer, the gas inlet delivers the ozone gas to the upper side of the wafer when the process liquid is present on the upper side of the wafer.

14. The device according to claim 1 , further comprising a second plate disposed between the heater and the wafer when the wafer is held by the rotary chuck, wherein the second plate is transparent to radiation emitted by the heater.

15. The device according to claim 14 , wherein the second plate is made of quartz or sapphire.

16. The device according to claim 14 , wherein the second plate is disposed below a body of the rotary chuck and below the wafer when the wafer is held by the rotary chuck.

17. The device according to claim 1 , wherein:
the first plate is on a same side of the wafer as the first liquid dispenser; and
the first plate shields an interior of one side of the process chamber from liquid droplets flung off of the wafer.

18. The device according to claim 1 , further comprising a second liquid dispenser located below the wafer and on a same side of the wafer as the heater.

19. The device according to claim 1 , wherein the heater is configured to heat the wafer to a temperature in excess of 300° C.

20. The device of claim 1 , wherein the first cooling fluid comprises deionized water and is supplied during a drying process to rinse off an underside of the first plate.

21. The device of claim 1 , further comprising a second plate disposed between the heater and the wafer, wherein the second plate is transparent to wavelengths of emitted radiation of the heater.

22. The device of claim 21 , wherein the second plate is formed of quartz or sapphire.

23. The device of claim 21 , wherein:
the heater comprises an array of light-emitting diodes;
a second cooling fluid is circulated around the light-emitting diodes to prevent the light-emitting diodes from overheating;
the heater is disposed on a cover and between the cover and the second plate; and
the cooling fluid is provided in a space between the second plate and the cover.

24. The device of claim 23 , wherein the light-emitting diodes are disposed across the wafer between a center of the wafer and an outermost periphery of the wafer to heat a whole surface area of the underside of the wafer.

25. The device of claim 1 , wherein the heater heats the underside of the wafer while the process liquid is dispensed on the upper side of the wafer.

26. A device for processing a wafer, the device comprising:
a process chamber providing a gas-tight enclosure;
a rotary chuck located within the process chamber and above the wafer, wherein the rotary chuck comprises a first plate, wherein the first plate is located above the wafer and rotates with the rotary chuck, wherein the rotary chuck is adapted to hold the wafer, and wherein the first plate is cooled via a first cooling fluid;
a heater positioned relative to the rotary chuck and facing an underside of the wafer, wherein the heater is configured to heat the underside of the wafer, wherein the heater emits radiation having a maximum intensity in a wavelength range between 390-550 nanometers;
a second plate disposed between the heater and the rotary chuck, wherein the rotary chuck holds the wafer between the first plate and the second plate;
a first liquid dispenser positioned relative to the chuck and configured to dispense a process liquid onto an upper side of the wafer, wherein the upper side is opposite the underside of the wafer,
wherein
the process chamber comprises an upper region above the wafer in which an outlet of the first liquid dispenser is located and a lower region below the wafer in which the heater is located, and
the heater is non-rotatably mounted within the process chamber; and

a second liquid dispenser disposed in the lower region and dispensing a second cooling fluid between the heater and the second plate.

27. The device of claim 26 , wherein:
the heater comprises an array of light-emitting diodes;
the second cooling fluid is circulated around the light-

Assignees

• Lam Res Ag

Inventors

• Obweger Rainer
• Gleissner Andreas
• Wirnsberger Thomas
• Kumnig Franz
• Baldaro Alessandro
• Fischer Christian Thomas
• Chou Mu Hung
• Dylewicz Rafal Ryszard
• Lavdovsky Nathan
• Berry Iii Ivan L

Classifications

• H10P72/7626

  characterised by the construction of the shaft · CPC title

• H10P72/0436 Primary

  mainly by radiation · CPC title

• H10P50/287

  by chemical means · CPC title

• H10P72/0424 Primary

  using mainly spraying means, e.g. nozzles · CPC title

• H10P72/0448

  Apparatus for applying a liquid, a resin, an ink or the like · CPC title