Multimode interference based VPIN diode waveguides

Patent metadata

Field	Value
Publication number	US-10488732-B2
Application number	US-201816223757-A
Country	US
Kind code	B2
Filing date	Dec 18, 2018
Priority date	Dec 22, 2017
Publication date	Nov 26, 2019
Grant date	Nov 26, 2019

Abstract

Example embodiments relate to an electro-optical device that includes a vertical p-i-n diode waveguide. The electro-optical device includes a waveguide portion adapted for propagating a multimode wave, the waveguide portion including an intrinsic semiconductor region of the vertical p-i-n diode, a first contact and a second contact for electrically contacting a first electrode and a second electrode of the vertical p-i-n diode. The device also includes an input section for coupling radiation into the waveguide portion and an output section for coupling radiation out of the waveguide portion. The input section, the output section, and the waveguide portion are configured to support a multimode interference pattern for the multimode wave with an optical field with a lateral inhomogeneous spatial distribution in the waveguide portion including regions with higher optical field intensity and regions with lower optical field intensity. The second contact physically contacts the second electrode.

First claim

The invention claimed is:

1. An integrated electro-optical semiconductor device comprising a vertical p-i-n diode waveguide, the device comprising:
a waveguide portion adapted for propagating a multimode wave comprising an intrinsic semiconductor region for the vertical p-i-n diode;
a first contact and a second contact for electrically contacting a first electrode and a second electrode of the vertical p-i-n diode;
an input section for coupling radiation into the waveguide portion; and
an output section for coupling radiation out of the waveguide portion,
wherein the input section, the output section, and the waveguide portion are configured to support a multimode interference pattern for the multimode wave with an optical field with a lateral inhomogeneous spatial distribution in the waveguide portion comprising regions with higher optical field intensity and regions with lower optical field intensity, and
wherein the second contact physically contacts the second electrode in at least one region of the waveguide with lower optical field intensity.

2. The integrated electro-optical semiconductor device according to claim 1 , wherein at least one of the input section or the output section are configured with respect to an interface with the waveguide portion so as to excite at least two guided modes of the waveguide portion.

3. The integrated electro-optical semiconductor device according to claim 2 , wherein, at an interface between (i) the waveguide portion and (ii) the input section or the output section, the center of the input section or the output section is substantially aligned with a local maximum intensity of the interference pattern of the at least two guided modes of the waveguide portion.

4. The integrated electro-optical semiconductor device according to claim 1 , wherein the input section or the output section has, at an interface with the waveguide portion, a width that is smaller than the width of the waveguide portion.

5. The integrated electro-optical semiconductor device according to claim 1 , wherein the device is adapted for inducing the interference pattern such that the higher optical field intensity follows a meandering path along a propagation direction in the waveguide portion.

6. The integrated electro-optical semiconductor device according to claim 1 , wherein the device is configured for exciting in the waveguide portion an odd first-order mode and an even first-order mode.

7. The integrated electro-optical semiconductor device according to claim 1 , wherein the first contact is formed at least partly below regions of higher optical field intensity along a propagation direction in the waveguide portion.

8. The integrated electro-optical semiconductor device according to claim 7 , wherein the first electrode is a doped layer forming a p-layer or an n-layer of the vertical p-i-n diode, having a pattern following the regions of higher optical field intensity.

9. The integrated electro-optical semiconductor device according to claim 1 , wherein the vertical p-i-n diode is implemented in one of a Ge-on-Si material system, a Si material system, a Ge material system, a GeSi material system, a GeSn material system, a SiGeSn material system, or a III-V based material system.

10. The integrated electro-optical semiconductor device according to claim 1 , wherein the optical field with a lateral inhomogeneous spatial distribution is adapted so that at least 50% of a surface area of the waveguide portion has the lower optical field intensity and is useable as contact area for the second contact.

11. The integrated electro-optical semiconductor device according to claim 1 , the vertical p-i-n diode waveguide being reverse biased.

12. The integrated electro-optical semiconductor device according to claim 1 , the device being a Ge based photodetector.

13. The integrated electro-optical semiconductor device according to claim 1 , wherein the device is a Franz-Keldysh effect electro-absorption modulator or wherein the device is a multi-quantum well based quantum-confined Stark effect based electro-absorption modulator.

14. A variable optical attenuator comprising a vertical p-i-n diode waveguide, the variable optical attenuator comprising:
a waveguide portion adapted for propagating a multimode wave comprising an intrinsic semiconductor region for the vertical p-i-n diode;
a first contact and a second contact for electrically contacting a first electrode and a second electrode of the vertical p-i-n diode;
an input section for coupling radiation into the waveguide portion; and
an output section for coupling radiation out of the waveguide portion,
wherein the input section, the output section, and the waveguide portion are configured to support a multimode interference pattern for the multimode wave with an optical field with a lateral inhomogeneous spatial distribution in the waveguide portion comprising regions with higher optical field intensity and regions with lower optical field intensity, and
wherein the second contact physically contacts the second electrode in at least one region of the waveguide with lower optical field intensity.

15. A method for manufacturing an integrated electro-optical semiconductor device comprising a vertical p-i-n diode waveguide, the device comprising a waveguide portion adapted for propagating a multimode wave, the waveguide portion comprising an intrinsic semiconductor region of the vertical p-i-n diode, the method comprising:
providing a first electrode in a pattern on a substrate, the first electrode being doped with charge carriers of a first polarity;
providing an intrinsic semiconductor region on the first electrode,
providing a second electrode on the intrinsic semiconductor region, the second electrode being doped with charge carriers of an opposite polarity;
providing an input section for coupling radiation into the waveguide portion and an output section for coupling radiation out of the waveguide portion;
forming a first contact for electrically contacting the first electrode of the vertical p-i-n diode; and
forming a second contact for electrically contacting the second electrode of the vertical p-i-n diode,
wherein the waveguide portion comprises at least part of the intrinsic semiconductor region of the vertical p-i-n diode, and
wherein the input section, the output section, and the waveguide portion of the vertical p-i-n diode are configured for supporting a multimode interference pattern for the multimode wave with an optical field with a lateral inhomogeneous spatial distribution in the waveguide portion comprising regions with higher optical field intensity and regions with lower optical field intensity, the second contact physically contacting the second electrode in at least one region of the waveguide with lower optical field intensity.

16. The method according to claim 15 , wherein at least one of the input section or the output section are configured with respect to an interface with the waveguide portion so as to excite at least two guided modes of the waveguide portion.

17. The method according to claim 16 , wherein, at an interface between (i) the waveguide portion and (ii) the input section or the output section, the center of the input section or the output section is substantially aligned with a local maximum intensity of the multimode interference pattern of the at least two guided modes of the waveguide portion.

18. The method according to claim 15 , wherein the input section or the output section has, at an interface with the waveguide portion, a width that is smaller

Assignees

• Imec Vzw
• Univ Gent

Inventors

• Srinivasan Ashwyn
• Van Campenhout Joris

Classifications

• H01S5/50

  Amplifier structures not provided for in groups H01S5/02 - H01S5/30 · CPC title

• G02F1/2257 Primary

  the optical waveguides being made of semiconducting material · CPC title

• G02F2203/48

  Variable attenuator · CPC title

• G02F2202/105

  single crystal Si · CPC title

• G02F1/01708

  in an optical wavequide structure · CPC title