Ring modulators with low-loss and large free spectral range (fsr) on a silicon-on-insulator (soi) platform
US-2024369864-A1 · Nov 7, 2024 · US
US9229251B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9229251-B2 |
| Application number | US-201314062224-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 24, 2013 |
| Priority date | Nov 30, 2012 |
| Publication date | Jan 5, 2016 |
| Grant date | Jan 5, 2016 |
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The present optical modulator includes an optical waveguide core made of a semiconductor material, an electrode, and a plurality of channels made of a semiconductor material doped in an n type or a p type and electrically connecting the optical waveguide core and the electrode to each other. The plurality of channels are provided in a spaced relationship from each other along a propagation direction of light; the optical waveguide core includes a doped region doped in the n type or the p type and a non-doped region. The doped region and the non-doped region are disposed alternately along the propagation direction of light. Each of the plurality of channels is connected to the doped region.
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What is claimed is: 1. An optical modulator comprising: an optical waveguide core made of a semiconductor material; an electrode; and a plurality of channels made of a semiconductor material doped in an n type or a p type and electrically connecting the optical waveguide core and the electrode to each other; wherein the plurality of channels are provided in a spaced relationship from each other along a propagation direction of light; the optical waveguide core includes a doped region doped in the n type or the p type and a non-doped region, the doped region and the non-doped region being disposed alternately along the propagation direction of light; each of the plurality of channels is connected to the doped region; the electrode includes a first electrode and a second electrode provided on opposite sides of the optical waveguide core; the doped region includes an n-type doped region doped in the n type, and a p-type doped region joined to the n type doped region and doped in the p type; the non-doped region and at least one of the n-type doped region and the p-type doped region are provided alternately along the propagation direction of light; and the plurality of channels include a plurality of n-type channels made of a semiconductor material doped in the n type, electrically connecting the optical waveguide core and the first electrode to each other, provided in a spaced relationship from each other in the propagation direction of light and connected to the n-type doped region, and a plurality of p-type channels made of a semiconductor material doped in the p type, electrically connecting the optical waveguide core and the second electrode to each other, provided in a spaced relationship from each other in the propagation direction of light and connected to the p-type doped region. 2. The optical modulator according to claim 1 , wherein the n-type doped region and the non-doped region are provided alternately along the propagation direction of light, and the p-type doped region and the non-doped region are provided alternately along the propagation direction of light. 3. The optical modulator according to claim 1 , wherein the n-type doped region and the non-doped region are provided alternately along the propagation direction of light, and the p-type doped region is provided successively along the propagation direction of light. 4. The optical modulator according to claim 1 , wherein the p-type doped region and the non-doped region are provided alternately along the propagation direction of light, and the n-type doped region is provided successively along the propagation direction of light. 5. The optical modulator according to claim 1 , wherein the plurality of n-type channels are provided periodically in a fixedly spaced relationship from each other along the propagation direction of light, and the plurality of p-type channels are provided periodically in a fixedly spaced relationship from each other along the propagation direction of light. 6. An optical modulator comprising: an optical waveguide core made of a semiconductor material; an electrode; and a plurality of channels made of a semiconductor material doped in an n type or a p type and electrically connecting the optical waveguide core and the electrode to each other; wherein the plurality of channels are provided in a spaced relationship from each other along a propagation direction of light; the optical waveguide core includes a doped region doped in the n type or the p type and a non-doped region, the doped region and the non-doped region being disposed alternately along the propagation direction of light; each of the plurality of channels is connected to the doped region; the electrode includes a first electrode and a second electrode provided on opposite sides of the optical waveguide core; the doped region includes a p-type doped region doped in the p type; and the plurality of channels include a plurality of first n-type channels made of a semiconductor material doped in the n type, electrically connecting the optical waveguide core and the first electrode to each other, provided in a spaced relationship from each other in the propagation direction of light and connected to one side of the doped region, and a plurality of second n-type channels made of a semiconductor material doped in the n type, electrically connecting the optical waveguide core and the second electrode to each other, provided in a spaced relationship from each other in the propagation direction of light and connected to the opposite side to the one side of the doped region. 7. The optical modulator according to claim 6 , wherein the plurality of first n-type channels are provided periodically in a fixedly spaced relationship from each other in the propagation direction of light, and the plurality of second n-type channels are provided periodically in a fixedly spaced relationship from each other in the propagation direction of light. 8. An optical modulator comprising: an optical waveguide core made of a semiconductor material; an electrode; and a plurality of channels made of a semiconductor material doped in an n type or a p type and electrically connecting the optical waveguide core and the electrode to each other; wherein the plurality of channels are provided in a spaced relationship from each other along a propagation direction of light; the optical waveguide core includes a doped region doped in the n type or the p type and a non-doped region, the doped region and the non-doped region being disposed alternately along the propagation direction of light; each of the plurality of channels is connected to the doped region; and the optical waveguide core and the plurality of channels have an equal thickness. 9. An optical transmitter, comprising: a semiconductor laser that outputs continuous light; and an optical modulator that modulates the continuous light from the semiconductor laser; the optical modulator including: an optical waveguide core made of a semiconductor material; an electrode; and a plurality of channels made of a semiconductor material doped in an n type or a p type and electrically connecting the optical waveguide core and the electrode to each other; the plurality of channels being provided in a spaced relationship from each other along a propagation direction of light; the optical waveguide core including a doped region doped in the n type or the p type and a non-doped region, the doped region and the non-doped region being disposed alternately along the propagation direction of light; and each of the plurality of channels being connected to the doped region; the plurality of channels being provided periodically in a fixedly spaced relationship from each other in the propagation direction of light; a wavelength of the continuous light outputted from the semiconductor laser being set to a wavelength in the proximity of a band edge on the longer wavelength side of a stop band of a transmission spectrum of the optical modulator.
the optical waveguides being made of semiconducting material · CPC title
in an optical waveguide structure (G02F1/017, {G02F1/2257} take precedence) · CPC title
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