Semiconductor devices and methods of manufacturing
US-12166025-B2 · Dec 10, 2024 · US
US10486359B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10486359-B2 |
| Application number | US-201414889226-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 24, 2014 |
| Priority date | May 21, 2013 |
| Publication date | Nov 26, 2019 |
| Grant date | Nov 26, 2019 |
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Prepared is a film device (FD) in which a first thermoplastic film (141), a device layer (110) (i.e., a multi-layer product including a polyimide film and a device body), and a second thermoplastic film (142) are arranged. The film device (FD) is pressed against a forming mold (150) and heated at a lower temperature than the temperature limit of the polyimide film, such that the first thermoplastic film is stretched to conform to the shape of the forming mold (150).
Opening claim text (preview).
The invention claimed is: 1. A method for manufacturing a display apparatus, the method comprising: preparing a film device including a device layer arranged on a first thermoplastic film, the device layer being a multi-layer product including a polyimide film and a device body, and the polyimide film being sandwiched between the device body and the first thermoplastic film; heating the first thermoplastic film of the film device while the first thermoplastic film is pressed against a forming mold, so as to stretch the first thermoplastic film to conform to a shape of the forming mold; and removing the forming mold from the first thermoplastic film of the film device, wherein the heating is performed at a heating temperature lower than a temperature limit of the polyimide film, and the heating temperature is higher at a curved surface and a corner portion of the first thermoplastic film than at a flat portion of the first thermoplastic film based on the shape of the forming mold. 2. The method of claim 1 , wherein the preparing includes: sequentially forming and stacking a sacrificial film, the polyimide film, and the device body on a supporting substrate; removing the supporting substrate and the sacrificial film from the device layer, through emission of a laser beam onto the sacrificial film; and applying the first thermoplastic film to the polyimide film of the device layer. 3. The method of claim 1 , wherein the film device further includes a second thermoplastic film such that the device layer is sandwiched between the first and second thermoplastic films. 4. The method of claim 1 , wherein the heating is performed at a temperature ranging from 80° C. to 250° C. 5. The method of claim 4 , wherein when the first thermoplastic film is thinner than about 200 μm, the heating temperature is between about 80° C. and about 180° C. inclusive. 6. The method of claim 4 , wherein when the first thermoplastic film is thicker than about 200 μm, the heating temperature is between about 130° C. and about 250° C. inclusive. 7. The method of claim 1 , wherein the first thermoplastic film is formed of one of polyethylene, polypropylene, polyvinyl chloride, polystyrene, styrene-acrylonitrile copolymer, acrylonitrile butadiene styrene copolymer, polyethylene terephthalate, polymethylmethacrylate, methacrylate styrene copolymer, acetylcellulose, polyvinyl alcohol, polyvinylidene chloride, and polycarbonate. 8. The method of claim 1 , wherein the device layer is provided to two regions of the first thermoplastic film, each of the two regions corresponding to one of two adjacent faces of the forming mold. 9. The method of claim 1 , wherein the device layer is provided to one region of the first thermoplastic film, the one region corresponding to two adjacent faces of the forming mold. 10. The method of claim 1 , wherein the device layer is provided to a region of the first thermoplastic film, the region corresponding to an edge of the forming mold. 11. The method of claim 1 , wherein the device layer is provided to a region of the first thermoplastic film, the region corresponding to a corner of the forming mold. 12. The method of claim 1 , wherein the device layer is a liquid crystal display panel. 13. The method of claim 1 , wherein the device layer is an organic electroluminescence (EL) display panel. 14. The method of claim 1 , wherein the device layer is a touch panel. 15. The method of claim 1 , wherein the device layer is a light-emitting diode (LED). 16. A display apparatus prepared based on the method of claim 1 .
used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate · CPC title
used as a support during build up manufacturing of active devices · CPC title
the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support · CPC title
Details of chemical or physical process used for separating the auxiliary support from a device or a wafer · CPC title
using temporarily an auxiliary support · CPC title
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