Transistor device with high current robustness

Patent metadata

Field	Value
Publication number	US-10483384-B2
Application number	US-201715682807-A
Country	US
Kind code	B2
Filing date	Aug 22, 2017
Priority date	Aug 25, 2016
Publication date	Nov 19, 2019
Grant date	Nov 19, 2019

Abstract

A transistor device includes a first emitter region of a first doping type, a second emitter region of a second doping type, a body of the second doping type, a drift region of the first doping type, a field-stop region of the first doping type, at least one boost structure, and a gate electrode. The boost structure is arranged between the field-stop region and the second emitter region. The at least one boost structure includes a base region of the first doping type and at least one auxiliary emitter region of the second doping type separated from the second emitter region by the base region. An overall dopant dose in the drift region and the field-stop region in a current flow direction of the transistor device is higher than a breakthrough charge of a semiconductor material of the drift region and the field-stop region.

First claim

What is claimed is:

1. A transistor device, comprising:
a first emitter region of a first doping type, a second emitter region of a second doping type, a body region of the second doping type, a drift region of the first doping type, a field-stop region of the first doping type, and at least one boost structure; and
a gate electrode dielectrically insulated from the body region by a gate dielectric,
wherein the body region is arranged between the first emitter region and the drift region, the field-stop region is arranged between the drift region and the boost structure, and the boost structure is arranged between the field-stop region and the second emitter region,
wherein the at least one boost structure comprises a base region of the first doping type and at least one auxiliary emitter region of the second doping type separated from the second emitter region by the base region,
wherein an overall dopant dose in the drift region and the field-stop region in a current flow direction of the transistor device is higher than a breakthrough charge of a semiconductor material of the drift region and the field-stop region.

2. The transistor device of claim 1 , wherein the semiconductor material is selected from the group consisting of: silicon; and silicon carbide.

3. The transistor device of claim 1 , wherein the at least one boost structure comprises two or more boost structures.

4. The transistor device of claim 1 , wherein the at least one auxiliary emitter region comprises a plurality of auxiliary emitter regions that are spaced apart in a direction perpendicular to the current flow direction, and wherein the at least one boost structure further comprises a pass region of the first doping type laterally interposed between neighboring ones of the plurality of auxiliary emitter regions and connecting the field-stop region with the base region to allow charge carriers to pass the plurality of auxiliary emitter regions between the field-stop region and the base region.

5. The transistor device of claim 4 , wherein a distance between two neighboring auxiliary emitter regions of the plurality of auxiliary emitter regions is in a range between 500 nanometers and 10 micrometers, or between 1 micrometer and 6 micrometers.

6. The transistor device of claim 1 , wherein the at least one auxiliary emitter region comprises a grid shaped auxiliary emitter region.

7. The transistor device of claim 1 , wherein the semiconductor material is silicon and a doping concentration of the at least one auxiliary emitter region is in a range between 1E18 cm −3 and 1E19 cm −3 .

8. The transistor device of claim 1 , wherein a length of the at least one auxiliary emitter region in the current flow direction is in a range between 1 micrometer and 10 micrometers, or between 1 micrometer and 6 micrometers.

9. The transistor device of claim 1 , wherein a doping concentration of the second emitter region is lower than a doping concentration of the at least one auxiliary emitter region.

10. The transistor device of claim 1 , wherein a doping concentration of the second emitter region is in a range between 1E16 cm −3 and 1E18 cm −3 , or between 5E16 cm −3 and 5E17 cm −3 .

11. The transistor device of claim 1 , wherein the drift region has a lower doping concentration than the field-stop region.

12. The transistor device of claim 11 , wherein a doping concentration of the drift region is in a range between 5E12 cm −3 and 1E14 cm −3 , and wherein a minimum doping concentration of the field-stop region is in a range between 1E14 cm −3 and 5E15 cm −3 .

13. The transistor device of claim 12 , wherein a doping concentration of the field-stop region decreases towards the boost structure, and wherein a maximum doping concentration of the field-stop region is in a range between 1E15 cm −3 and 5E16 cm −3 .

14. The transistor device of claim 12 , wherein a doping concentration of the field-stop region increases towards the boost structure, and wherein a maximum doping concentration of the field-stop region is in a range between 1E15 cm −3 and 5E16 cm −3 .

15. The transistor device of claim 1 , wherein a length of the base region between the at least one auxiliary emitter region and the second emitter region is in a range between 0.5 micrometers and 10 micrometers.

16. The transistor device of claim 15 , wherein the length of the base region is less than 5 micrometers.

17. The transistor device of claim 1 , wherein a doping concentration of the base region is in a range between 1E14 cm −3 and 5E15 cm −3 .

18. The transistor device of claim 1 , wherein a doping concentration of the field-stop region has a maximum close to the drift region and decreases towards the at least one auxiliary emitter region to a level above a doping concentration of the drift region, and wherein a doping concentration of the base region of the at least one boost structure exceeds the doping concentration of the drift region.

19. A transistor device that can be operated in an on-state and an off-state, comprising:
a first emitter region of a first doping type, a second emitter region of a second doping type, a body region of the second doping type, a drift region of the first doping type, a field-stop region of the first doping type, and at least one boost structure; and
a gate electrode dielectrically insulated from the body region by a gate dielectric,
wherein the body region is arranged between the first emitter region and the drift region, the field-stop region is arranged between the drift region and the boost structure, and the boost structure is arranged between the field-stop region and the second emitter region,
wherein the at least one boost structure comprises a base region of the first doping type and at least one auxiliary emitter region of the second doping type separated from the second emitter region by the base region,
wherein a doping profile of the drift region and the field-stop region is such that in the off-state of the transistor device an electric field associated with applying a load path voltage between the first emitter region and the second emitter region stops in the field-stop region spaced apart from the at least one auxiliary emitter region when a critical field strength is reached at a pn junction between the body region and the drift region.

Assignees

• Infineon Technologies Ag

Inventors

• Bhojani Riteshkumar
• Niedernostheide Franz-Josef
• Schulze Hans-Joachim
• Lutz Josef
• Baburske Roman

Classifications

• H03K17/16

  Modifications for eliminating interference voltages or currents · CPC title

• H01L27/0222

  Electricity · mapped topic

• H01L29/36

  Electricity · mapped topic

• H01L29/0696

  Electricity · mapped topic

• H01L29/0619

  Electricity · mapped topic