Power semiconductor device

Patent metadata

Field	Value
Publication number	US-10483175-B2
Application number	US-201515758349-A
Country	US
Kind code	B2
Filing date	Dec 4, 2015
Priority date	Dec 4, 2015
Publication date	Nov 19, 2019
Grant date	Nov 19, 2019

Abstract

An object of the present invention to provide a technique which can put flexibility into positions, positional relationships, and sizes of constituent elements. A power semiconductor device includes: a substrate on which a semiconductor chip is disposed; an electrode which has one end fixed to the substrate and stands upright on the substrate; and an insulating case which houses the electrode and has a part opposed to the other end of the electrode. The power semiconductor device includes a conductive nut which is inserted into the case in the part of the case and a conductive component which electrically connects the other end of the electrode and the nut.

First claim

The invention claimed is:

1. A power semiconductor device, comprising:
a substrate on which a semiconductor chip is disposed;
an electrode which has one end fixed to the substrate and stands upright on the substrate;
an insulating case which houses the electrode and has a part opposed to another end of the electrode;
a conductive nut which is inserted into the case in the part of the case; and
a conductive component which directly connects the another end of the electrode and the nut, wherein
the conductive component connects to the another end of the electrode at a position on an inner-surface side of the insulating case.

2. A power semiconductor device, comprising:
a substrate on which a semiconductor chip is disposed;
an electrode which has one end fixed to the substrate and stands upright on the substrate;
an insulating case which houses the electrode and has a part opposed to another end of the electrode;
a conductive nut which is inserted into the case in the part of the case; and
a conductive component which electrically connects the another end of the electrode and the nut, wherein
one end of the conductive component is connected to the another end of the electrode, and
another end of the conductive component is attached to the nut only partway.

3. The power semiconductor device according to claim 2 , wherein
the conductive component includes a stud bolt, a bolt, or a banana plug.

4. The power semiconductor device according to claim 1 , wherein
the conductive component includes a bolt for being connected to an external wiring, in which a head is disposed on an outer side of the case, a middle portion is inserted into the nut, and a screw point is connected to the another end of the electrode.

5. The power semiconductor device according to claim 4 , wherein
an elastic portion is provided on the another end of the electrode, and
the screw point of the bolt is connected to the elastic portion of the electrode.

6. A power semiconductor device, comprising:
a substrate on which a semiconductor chip is disposed;
an electrode which has one end fixed to the substrate and stands upright on the substrate;
an insulating case which houses the electrode and has a part opposed to another end of the electrode;
a conductive nut which is inserted into the case in the part of the case; and
a conductive component which electrically connects the another end of the electrode and the nut, wherein
the nut protrudes from an outer surface of the case, and protrudes through an inner surface of the case.

7. The power semiconductor device according to claim 1 , wherein
the semiconductor chip is made of silicon carbide.

Assignees

• Mitsubishi Electric Corp

Inventors

• Araki Shoko
• Hayashida Yukimasa
• Date Ryutaro

Classifications

• H10W72/07551

  characterised by changes in properties of the bond wires during the connecting · CPC title

• H10W72/50

  Bond wires · CPC title

• H10W90/00

  Package configurations · CPC title

• H10W72/00

  Interconnections or connectors in packages · CPC title

• H10W76/12 Primary

  characterised by their shape · CPC title