Materials for near field transducers and near field transducers containing same

Patent metadata

Field	Value
Publication number	US-10482914-B2
Application number	US-201815952506-A
Country	US
Kind code	B2
Filing date	Apr 13, 2018
Priority date	Jun 24, 2013
Publication date	Nov 19, 2019
Grant date	Nov 19, 2019

Abstract

A device including a near field transducer, the near field transducer including gold (Au) and at least one other secondary atom, the at least one other secondary atom selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof; erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof; and barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof.

First claim

What is claimed is:

1. A device comprising:
a near field transducer, the near field transducer comprising gold (Au) and at least one other secondary atom present in an amount from 0.01 atomic percent to about 5 atomic percent, the at least one other secondary atom selected from:
boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), manganese (Mn), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof;
erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof; and
barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof.

2. The device according to claim 1 , wherein the at least one secondary atom is selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), manganese (Mn), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof.

3. The device according to claim 1 , wherein the at least one secondary atom is selected from: boron (B), bismuth (Bi), sulfur (S), silicon (Si), indium (In), or combinations thereof.

4. The device according to claim 1 , wherein the at least one secondary atom is selected from: boron (B), sulfur (S), silicon (Si), or combinations thereof.

5. The device according to claim 1 , wherein the at least one secondary atom is selected from indium (In).

6. The device according to claim 1 , wherein the near field transducer comprises at least two secondary atoms.

7. The device according to claim 6 , wherein a first secondary atom is selected from:
boron (B), bismuth (Bi), sulfur (S), silicon (Si), carbon (C), tellurium (Te), or combinations thereof,
holmium (Ho), lutetium (Lu), praseodymium (Pr), uranium (U), or combinations thereof; and
cesium (Cs), dysprosium (Dy), europium (Eu), gadolinium (Gd), germanium (Ge), rubidium (Rb), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), or combinations thereof; and
a second secondary atom is selected from:
indium (In), tin (Sn), manganese (Mn), or some combination thereof; and
erbium (Er), scandium (Sc), zinc (Zn), or some combination thereof.

8. The device according to claim 1 , wherein the near field transducer comprises about 0.1 atomic percent to about 5 atomic percent of the at least one secondary atom.

9. The device according to claim 1 further comprising an energy source.

10. A device comprising:
a light source;
a waveguide; and
a near field transducer, the near field transducer comprising gold (Au) and at least one other secondary atom present in an amount from 0.01 atomic percent to about 5 atomic percent, the at least one other secondary atom selected from:
boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), manganese (Mn), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof;
erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof; and
barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof,

wherein the light source, waveguide and near field transducer are configured to transmit light from the light source to the waveguide and finally the near field transducer.

11. The device according to claim 10 , wherein the at least one secondary atom is selected from: boron (B), bismuth (Bi), sulfur (S), silicon (Si), indium (In), or combinations thereof.

12. The device according to claim 10 , wherein the at least one secondary atom is selected from: boron (B), sulfur (S), silicon (Si), or combinations thereof.

13. The device according to claim 10 , wherein the at least one secondary atom is selected from indium (In).

14. The device according to claim 10 , wherein the near field transducer comprises at least two secondary atoms.

15. The device according to claim 14 , wherein a first secondary atom is selected from:
boron (B), bismuth (Bi), sulfur (S), silicon (Si), carbon (C), tellurium (Te), or combinations thereof,
holmium (Ho), lutetium (Lu), praseodymium (Pr), uranium (U), or combinations thereof; and
cesium (Cs), dysprosium (Dy), europium (Eu), gadolinium (Gd), germanium (Ge), rubidium (Rb), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), or combinations thereof; and
a second secondary atom is selected from:
indium (In), tin (Sn), manganese (Mn), or some combination thereof; and
erbium (Er), scandium (Sc), zinc (Zn), or some combination thereof.

16. The device according to claim 10 , wherein the near field transducer comprises about 0.1 atomic percent to about 5 atomic percent of the at least one secondary atom.

17. A disc drive comprising:
at least one actuator arm having a first and a second end;
at least one head, wherein each arm has a head at the first end thereof and wherein each head comprises:
a light source;
a near field transducer, the near field transducer comprising gold (Au) and at least one other secondary atom present in an amount from 0.01 atomic percent to about 5 atomic percent, the at least one other secondary atom selected from:
boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), manganese (Mn), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof;
erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof; and
barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof;

a magnetic reader; and
a magnetic writer,
wherein the light source and the near field transducer are configured to transmit light from the light source to the near field transducer in order to assist the magnetic writer with writing.

18. The disc drive according to claim 17 , wherein the at least one secondary atom is selected from: boron (B), bismuth (Bi), sulfur (S), silicon (Si), indium (In), or combinations thereof.

19. The disc drive according to claim 17 , wherein the near field transducer comprises about 0.1 atomic percent to about 5 atomic percent of the at least one secondary atom.

Assignees

• Seagate Technology Llc

Inventors

• Cheng Yuhang
• Zhao Tong
• Kautzky Michael C
• Rejda Ed F
• Wierman Kurt W
• Franzen Scott
• Jayashankar Sethuraman
• Sahoo Sarbeswar
• Gong Jie
• Seigler Michael Allen

Classifications

• C22C27/06

  Alloys based on chromium · CPC title

• C22C5/06

  Alloys based on silver · CPC title

• C22C22/00

  Alloys based on manganese · CPC title

• C22C21/00

  Alloys based on aluminium · CPC title

• C22C20/00

  Alloys based on cadmium · CPC title