Solid-state imaging element, method for manufacturing solid-state imaging element, and electronic device
US-9911870-B2 · Mar 6, 2018 · US
US10480995B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10480995-B2 |
| Application number | US-201515550127-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 19, 2015 |
| Priority date | Feb 18, 2015 |
| Publication date | Nov 19, 2019 |
| Grant date | Nov 19, 2019 |
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The signal processing board includes a plurality of signal processing circuits configured to process signals output from a plurality of pixels of an infrared detecting element. The signal processing board includes an element placement area where the infrared detecting element is placed, and a circuit placement area positioned outside the element placement area to surround the element placement area when viewed from a direction orthogonal to the signal processing board. The signal processing board includes a plurality of insulating layers that are stacked on a surface side opposing the semiconductor substrate. A plurality of signal processing circuits are placed in the circuit placement area. A heat-conducting layer is placed to be positioned on at least one of the insulating layers and in the element placement area, in the signal processing board. The heat-conducting layer has a heat conductivity that is higher than a heat conductivity of the insulating layers.
Opening claim text (preview).
The invention claimed is: 1. An infrared detecting device comprising: an infrared detecting element including a semiconductor substrate in which a plurality of pixels are two-dimensionally arranged; a signal processing board including a plurality of signal processing circuits configured to process signals output from the plurality of pixels, the signal processing board being disposed to oppose the semiconductor substrate; and a heat-conducting layer disposed in the signal processing board, wherein the signal processing board includes an element placement area where the infrared detecting element is placed, and a circuit placement area positioned outside the element placement area to surround the element placement area when viewed from a direction orthogonal to the signal processing board, and includes a plurality of insulating layers stacked on a surface side opposing the semiconductor substrate, in the element placement area, a plurality of electrodes electrically connected to a corresponding pixel of the plurality of pixels are arranged, the plurality of signal processing circuits are placed only in the circuit placement area to surround the element placement area, each signal processing circuit being electrically connected to a corresponding electrode of the plurality of electrodes though a conductive line, the signal processing board is configured to output a signal output from the pixel to the signal processing circuit though the electrode and conductive line corresponding the pixel, and the heat-conducting layer is placed to be positioned on at least one of the plurality of insulating layers and in the element placement area, and has a heat conductivity that is higher than a heat conductivity of the plurality of insulating layers. 2. The infrared detecting device according to claim 1 , wherein the heat-conducting layer includes a solidly-formed metal layer. 3. The infrared detecting device according to claim 1 , wherein the heat-conducting layer is placed to be positioned between two of the plurality of insulating layers that are adjacent to each other. 4. The infrared detecting device according to claim 1 , wherein the signal processing board has a rectangular shape when viewed from the direction orthogonal to the signal processing board, and the plurality of signal processing circuits are placed along respective edges of the signal processing board in the circuit placement area. 5. The infrared detecting device according to claim 4 , wherein the element placement area has a rectangular shape having a pair of edges that oppose each other and parallel to a pair of opposing edges of the signal processing board, and a pair of edges that oppose each other and parallel to another pair of opposing edges of the signal processing board, when viewed from the direction orthogonal to the signal processing board, the plurality of electrodes are two-dimensionally arranged in the element placement area to correspond to arrangement of the plurality of pixels, and when the element placement area includes four partial areas each having a rectangular shape, the electrodes placed in each of the four partial areas are connected to the signal processing circuits placed along an edge of the signal processing board that opposes an edge of each of the four partial areas where the electrodes are placed. 6. The infrared detecting device according to claim 1 , wherein the plurality of signal processing circuits are spaced apart from each other, and the heat-conducting layer includes a layer portion positioned between the signal processing circuits adjacent to each other when viewed from the direction orthogonal to the signal processing board. 7. The infrared detecting device according to claim 1 , further comprising: a heat-conducting member disposed in the signal processing board, the heat-conducting member having a heat conductivity that is higher than the heat conductivity of the plurality of insulating layers, wherein the heat-conducting member includes one end connected to the heat-conducting layer and another end positioned on a back side of a surface of the signal processing board that opposes the semiconductor substrate. 8. The infrared detecting device according to claim 1 , wherein the heat-conducting layer is configured to transfer heat provided from the signal processing circuits to the element placement area.
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